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Seeking the Dirac cones in the MoS2/WSe2 van der Waals heterostructure
Tuning a 3D microwave cavity via superfluid helium at millikelvin temperatures
Deep depletion concept for diamond MOSFET
Issues
23 October 2017
ISSN 0003-6951
EISSN 1077-3118
In this Issue
PHOTONICS AND OPTOELECTRONICS
Substrate-emitting ring interband cascade lasers
Martin Holzbauer; Rolf Szedlak; Hermann Detz; Robert Weih; Sven Höfling; Werner Schrenk; Johannes Koeth; Gottfried Strasser
Appl. Phys. Lett. 111, 171101 (2017)
https://doi.org/10.1063/1.4989514
Mid-infrared two photon absorption sensitivity of commercial detectors
D. L. Boiko; A. V. Antonov; D. I. Kuritsyn; A. N. Yablonskiy; S. M. Sergeev; E. E. Orlova; V. V. Vaks
Appl. Phys. Lett. 111, 171102 (2017)
https://doi.org/10.1063/1.4996187
GaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewells
Andreas Pfenning; Georg Knebl; Fabian Hartmann; Robert Weih; Manuel Meyer; Andreas Bader; Monika Emmerling; Lukas Worschech; Sven Höfling
Appl. Phys. Lett. 111, 171104 (2017)
https://doi.org/10.1063/1.4997497
Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs
Appl. Phys. Lett. 111, 171105 (2017)
https://doi.org/10.1063/1.4993230
Study of surface modes on a vibrating electrowetting liquid lens
Appl. Phys. Lett. 111, 171106 (2017)
https://doi.org/10.1063/1.4999562
Effect of plasma formation on the double pulse laser excitation of cubic silicon carbide
Appl. Phys. Lett. 111, 171107 (2017)
https://doi.org/10.1063/1.4997363
SURFACES AND INTERFACES
Seeking the Dirac cones in the MoS2/WSe2 van der Waals heterostructure
Qianze Li; Liangpo Tang; Caixin Zhang; Dan Wang; Qin-Jun Chen; Ye-Xin Feng; Li-Ming Tang; Ke-Qiu Chen
Appl. Phys. Lett. 111, 171602 (2017)
https://doi.org/10.1063/1.4998305
Parametric study of thin film evaporation from nanoporous membranes
Appl. Phys. Lett. 111, 171603 (2017)
https://doi.org/10.1063/1.4997945
Band offsets of epitaxial cubic boron nitride deposited on polycrystalline diamond via plasma-enhanced chemical vapor deposition
Joseph Shammas; Yu Yang; Xingye Wang; Franz A. M. Koeck; Martha R. McCartney; David J. Smith; Robert J. Nemanich
Appl. Phys. Lett. 111, 171604 (2017)
https://doi.org/10.1063/1.5009089
SEMICONDUCTORS
Annealing-induced interfacial atomic intermixing in InAs/GaSb type II superlattices
Appl. Phys. Lett. 111, 172101 (2017)
https://doi.org/10.1063/1.4999391
Stability of the oxygen vacancy induced conductivity in BaSnO3 thin films on SrTiO3
Appl. Phys. Lett. 111, 172102 (2017)
https://doi.org/10.1063/1.4996548
Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer
Appl. Phys. Lett. 111, 172103 (2017)
https://doi.org/10.1063/1.5000100
Annealing induced semiconductor-metal transition in Ge+ITO film
Appl. Phys. Lett. 111, 172104 (2017)
https://doi.org/10.1063/1.4993105
MAGNETICS AND SPINTRONICS
Effect of strain and thickness on the transition temperature of epitaxial FeRh thin-films
Appl. Phys. Lett. 111, 172401 (2017)
https://doi.org/10.1063/1.4997901
Engineering the magnetic anisotropy axes in epitaxial half-Heusler NiMnSb by Pt and Ta capping
Appl. Phys. Lett. 111, 172402 (2017)
https://doi.org/10.1063/1.5001385
Evidence of a topological Hall effect in Eu1−xSmxTiO3
Appl. Phys. Lett. 111, 172403 (2017)
https://doi.org/10.1063/1.4997498
Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films
Appl. Phys. Lett. 111, 172404 (2017)
https://doi.org/10.1063/1.5009428
Spin wave modes of width modulated Ni80Fe20/Pt nanostrip detected by spin-orbit torque induced ferromagnetic resonance
Appl. Phys. Lett. 111, 172407 (2017)
https://doi.org/10.1063/1.4999818
Spin transport through a junction entirely consisting of molecules from first principles
Appl. Phys. Lett. 111, 172408 (2017)
https://doi.org/10.1063/1.5009744
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
Tuning a 3D microwave cavity via superfluid helium at millikelvin temperatures
Appl. Phys. Lett. 111, 172601 (2017)
https://doi.org/10.1063/1.4997641
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Optically and electrically co-controlled resistance switching in complex oxide heterostructures
Appl. Phys. Lett. 111, 172901 (2017)
https://doi.org/10.1063/1.4986864
Tetragonal (K, Na)NbO3 based lead-free single crystal: Growth, full tensor properties, and their orientation dependence
Limei Zheng; Junjun Wang; Xuedong Liu; Liya Yang; Xiaoyan Lu; Yanran Li; Da Huo; Weiming Lü; Bin Yang; Wenwu Cao
Appl. Phys. Lett. 111, 172903 (2017)
https://doi.org/10.1063/1.4996757
NANOSCALE SCIENCE AND TECHNOLOGY
Laser induced forward transfer of graphene
Appl. Phys. Lett. 111, 173101 (2017)
https://doi.org/10.1063/1.5001712
Investigating the origin of third harmonic generation from diabolo optical antennas
Liping Shi; José R. C. Andrade; Hyunwoong Kim; Seunghwoi Han; Rana Nicolas; Dominik Franz; Willem Boutu; Torsten Heidenblut; Frans B. Segerink; Bert Bastiaens; Hamed Merdji; Seung-Woo Kim; Uwe Morgner; Milutin Kovačev
Appl. Phys. Lett. 111, 173102 (2017)
https://doi.org/10.1063/1.5001005
Mechanisms for plasma cryogenic etching of porous materials
Appl. Phys. Lett. 111, 173104 (2017)
https://doi.org/10.1063/1.4999439
Capillary assisted deposition of carbon nanotube film for strain sensing
Appl. Phys. Lett. 111, 173105 (2017)
https://doi.org/10.1063/1.5001754
Vector electric field measurement via position-modulated Kelvin probe force microscopy
Appl. Phys. Lett. 111, 173106 (2017)
https://doi.org/10.1063/1.4999172
Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces
Yongwoo Lee; Jinsu Yoon; Bongsik Choi; Heesung Lee; Jinhee Park; Minsu Jeon; Jungmin Han; Jieun Lee; Yeamin Kim; Dae Hwan Kim; Dong Myong Kim; Sung-Jin Choi
Appl. Phys. Lett. 111, 173108 (2017)
https://doi.org/10.1063/1.5009656
ORGANIC ELECTRONICS AND PHOTONICS
Utilizing Schottky barriers to suppress short-channel effects in organic transistors
Appl. Phys. Lett. 111, 173302 (2017)
https://doi.org/10.1063/1.4997405
DEVICE PHYSICS
Contact engineering for efficient charge injection in organic transistors with low-cost metal electrodes
Appl. Phys. Lett. 111, 173501 (2017)
https://doi.org/10.1063/1.4998603
Deep depletion concept for diamond MOSFET
Appl. Phys. Lett. 111, 173503 (2017)
https://doi.org/10.1063/1.4997975
ENERGY CONVERSION AND STORAGE
Analysis of thermocapacitive effects in electric double layers under a size modified mean field theory
Appl. Phys. Lett. 111, 173901 (2017)
https://doi.org/10.1063/1.5003362
Controlling diffusion in Ni/Al reactive multilayers by Nb-alloying
Appl. Phys. Lett. 111, 173902 (2017)
https://doi.org/10.1063/1.5003219
Silicon clathrates for photovoltaics predicted by a two-step crystal structure search
Appl. Phys. Lett. 111, 173904 (2017)
https://doi.org/10.1063/1.5000444
Exploiting bistable oscillator subharmonics for magnified broadband vibration energy harvesting
Appl. Phys. Lett. 111, 173905 (2017)
https://doi.org/10.1063/1.5001267
INTERDISCIPLINARY AND GENERAL PHYSICS
Speckle-tracking X-ray phase-contrast imaging for samples with obvious edge-enhancement effect
Feixiang Wang; Yudan Wang; Gongxiang Wei; Guohao Du; Yanling Xue; Tao Hu; Ke Li; Biao Deng; Honglan Xie; Tiqiao Xiao
Appl. Phys. Lett. 111, 174101 (2017)
https://doi.org/10.1063/1.4997970
Phase control with two-beam interferometry method in a terahertz dielectric wakefield accelerator
Dan Wang; Xiaolu Su; Lixin Yan; YingChao Du; Qili Tian; Yifan Liang; Lujia Niu; Wenhui Huang; Wei Gai; Chuanxiang Tang; Sergey Antipov
Appl. Phys. Lett. 111, 174102 (2017)
https://doi.org/10.1063/1.4999959
ERRATA
Publisher's Note: “Ultrafast non-thermal laser excitation of gigahertz longitudinal and shear acoustic waves in spin-crossover molecular crystals [Fe(PM–AzA)2(NCS)2]” [Appl. Phys. Lett. 111, 151901 (2017)]
T. Parpiiev; M. Servol; M. Lorenc; I. Chaban; R. Lefort; E. Collet; H. Cailleau; P. Ruello; N. Daro; G. Chastanet; T. Pezeril
Appl. Phys. Lett. 111, 179901 (2017)
https://doi.org/10.1063/1.5009657
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.