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Issues
28 November 2016
ISSN 0003-6951
EISSN 1077-3118
In this Issue
PHOTONICS AND OPTOELECTRONICS
Generation of two types of nonclassical optical states using an optical parametric oscillator with a PPKTP crystal
Appl. Phys. Lett. 109, 221101 (2016)
https://doi.org/10.1063/1.4968801
Core-shell Mie resonant structures for quantum computing applications
Appl. Phys. Lett. 109, 221102 (2016)
https://doi.org/10.1063/1.4968806
Coupled-cavity-based slow light metamaterials with antireflection structures
Appl. Phys. Lett. 109, 221103 (2016)
https://doi.org/10.1063/1.4968807
Surface plasmon driven lowering of the electron emission order in a carbon/gold bilayer film
Appl. Phys. Lett. 109, 221104 (2016)
https://doi.org/10.1063/1.4969066
Giant third-order nonlinearity from low-loss electrochemical graphene oxide film with a high power stability
Appl. Phys. Lett. 109, 221105 (2016)
https://doi.org/10.1063/1.4969068
Dispersion in a broadband terahertz quantum cascade laser
Dominic Bachmann; Markus Rösch; Giacomo Scalari; Mattias Beck; Jérôme Faist; Karl Unterrainer; Juraj Darmo
Appl. Phys. Lett. 109, 221107 (2016)
https://doi.org/10.1063/1.4969065
An integrated mirror and surface ion trap with a tunable trap location
Appl. Phys. Lett. 109, 221108 (2016)
https://doi.org/10.1063/1.4970542
Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region
Ruijun Wang; Stephan Sprengel; Aditya Malik; Anton Vasiliev; Gerhard Boehm; Roel Baets; Markus-Christian Amann; Gunther Roelkens
Appl. Phys. Lett. 109, 221111 (2016)
https://doi.org/10.1063/1.4971350
SURFACES AND INTERFACES
Self-assembled dual-sided hemispherical nano-dimple-structured broadband antireflection coatings
Appl. Phys. Lett. 109, 221601 (2016)
https://doi.org/10.1063/1.4971264
Fabrication of a nanometer thick nitrogen delta doped layer at the sub-surface region of (100) diamond
Appl. Phys. Lett. 109, 221602 (2016)
https://doi.org/10.1063/1.4971312
STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS
Generation of shear waves by laser in soft media in the ablative and thermoelastic regimes
Appl. Phys. Lett. 109, 221901 (2016)
https://doi.org/10.1063/1.4968538
Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films
Nobuhiko Mitoma; Bo Da; Hideki Yoshikawa; Toshihide Nabatame; Makoto Takahashi; Kazuhiro Ito; Takio Kizu; Akihiko Fujiwara; Kazuhito Tsukagoshi
Appl. Phys. Lett. 109, 221903 (2016)
https://doi.org/10.1063/1.4968810
Enhanced kinetic stability of a bulk metallic glass by high pressure
R. J. Xue; L. Z. Zhao; C. L. Shi; T. Ma; X. K. Xi; M. Gao; P. W. Zhu; P. Wen; X. H. Yu; C. Q. Jin; M. X. Pan; W. H. Wang; H. Y. Bai
Appl. Phys. Lett. 109, 221904 (2016)
https://doi.org/10.1063/1.4968834
A post-fabrication selective magnetic annealing technique in standard MEMS processes
Appl. Phys. Lett. 109, 221906 (2016)
https://doi.org/10.1063/1.4971262
Modeling and experimental verification of an ultra-wide bandgap in 3D phononic crystal
Appl. Phys. Lett. 109, 221907 (2016)
https://doi.org/10.1063/1.4971290
SEMICONDUCTORS
Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys
Appl. Phys. Lett. 109, 222101 (2016)
https://doi.org/10.1063/1.4969062
The linewidth enhancement factor of intersubband lasers: From a two-level limit to gain without inversion conditions
Appl. Phys. Lett. 109, 222102 (2016)
https://doi.org/10.1063/1.4969069
Atomic layer deposition of Nb-doped ZnO for thin film transistors
A. Shaw; J. S. Wrench; J. D. Jin; T. J. Whittles; I. Z. Mitrovic; M. Raja; V. R. Dhanak; P. R. Chalker; S. Hall
Appl. Phys. Lett. 109, 222103 (2016)
https://doi.org/10.1063/1.4968194
Negative differential resistance in n-type noncompensated silicon at low temperature
Appl. Phys. Lett. 109, 222104 (2016)
https://doi.org/10.1063/1.4968825
Electrical characteristics of MoSe2 TFTs dependent on the Al2O3 capping layer
Appl. Phys. Lett. 109, 222105 (2016)
https://doi.org/10.1063/1.4971258
Minority carrier recombination of ordered Ga0.51In0.49P at high temperatures
Appl. Phys. Lett. 109, 222106 (2016)
https://doi.org/10.1063/1.4971282
MAGNETICS AND SPINTRONICS
Spin-orbit torques in perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO multilayer
Di Wu; Guoqiang Yu; Ching-Tzu Chen; Seyed Armin Razavi; Qiming Shao; Xiang Li; Bingcheng Zhao; Kin L. Wong; Congli He; Zongzhi Zhang; Pedram Khalili Amiri; Kang L. Wang
Appl. Phys. Lett. 109, 222401 (2016)
https://doi.org/10.1063/1.4968785
Prospect for tunneling anisotropic magneto-resistance in ferrimagnets: Spin-orbit coupling effects in Mn3Ge and Mn3Ga
Appl. Phys. Lett. 109, 222402 (2016)
https://doi.org/10.1063/1.4970691
Low-current, narrow-linewidth microwave signal generation in NiMnSb based single-layer nanocontact spin-torque oscillators
P. Dürrenfeld; F. Gerhard; S. M. Mohseni; M. Ranjbar; S. R. Sani; S. Chung; C. Gould; L. W. Molenkamp; J. Åkerman
Appl. Phys. Lett. 109, 222403 (2016)
https://doi.org/10.1063/1.4968813
Out-of-plane polarization induced in magnetically-doped topological insulator Bi1.37V0.03Sb0.6Te2Se by circularly polarized synchrotron radiation above a Curie temperature
A. M. Shikin; A. A. Rybkina; I. I. Klimovskikh; M. V. Filianina; K. A. Kokh; O. E. Tereshchenko; P. N. Skirdkov; K. A. Zvezdin; A. K. Zvezdin
Appl. Phys. Lett. 109, 222404 (2016)
https://doi.org/10.1063/1.4969070
The antiphase boundary in half-metallic Heusler alloy Co2Fe(Al,Si): atomic structure, spin polarization reversal, and domain wall effects
Zlatko Nedelkoski; Ana M. Sanchez; Arsham Ghasemi; Kohei Hamaya; Richard F. L. Evans; Gavin R. Bell; Atsufumi Hirohata; Vlado K. Lazarov
Appl. Phys. Lett. 109, 222405 (2016)
https://doi.org/10.1063/1.4971281
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Large piezoelectricity in electric-field modified single crystals of SrTiO3
B. Khanbabaee; E. Mehner; C. Richter; J. Hanzig; M. Zschornak; U. Pietsch; H. Stöcker; T. Leisegang; D. C. Meyer; S. Gorfman
Appl. Phys. Lett. 109, 222901 (2016)
https://doi.org/10.1063/1.4966892
Morphology and crystalline-phase-dependent electrical insulating properties in tailored polypropylene for HVDC cables
Appl. Phys. Lett. 109, 222902 (2016)
https://doi.org/10.1063/1.4969063
NANOSCALE SCIENCE AND TECHNOLOGY
Synthesis of large monolayer single crystal MoS2 nanosheets with uniform size through a double-tube technology
Appl. Phys. Lett. 109, 223101 (2016)
https://doi.org/10.1063/1.4968582
Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells
S. Schulz; D. S. P. Tanner; E. P. O'Reilly; M. A. Caro; F. Tang; J. T. Griffiths; F. Oehler; M. J. Kappers; R. A. Oliver; C. J. Humphreys; D. Sutherland; M. J. Davies; P. Dawson
Appl. Phys. Lett. 109, 223102 (2016)
https://doi.org/10.1063/1.4968591
Optically active semiconductor nanopores for parallel molecule detection
Appl. Phys. Lett. 109, 223103 (2016)
https://doi.org/10.1063/1.4970788
Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes
Appl. Phys. Lett. 109, 223104 (2016)
https://doi.org/10.1063/1.4968824
Memory operations in Au nanoparticle single-electron transistors with floating gate electrodes
Appl. Phys. Lett. 109, 223106 (2016)
https://doi.org/10.1063/1.4971190
ORGANIC ELECTRONICS AND PHOTONICS
Molecular floating-gate organic nonvolatile memory with a fully solution processed core architecture
Appl. Phys. Lett. 109, 223301 (2016)
https://doi.org/10.1063/1.4971187
DEVICE PHYSICS
Imaging photocurrent collection losses in solar cells
Appl. Phys. Lett. 109, 223502 (2016)
https://doi.org/10.1063/1.4971266
BIOPHYSICS AND BIO-INSPIRED SYSTEMS
ENERGY CONVERSION AND STORAGE
Wireless power transfer based on dielectric resonators with colossal permittivity
Appl. Phys. Lett. 109, 223902 (2016)
https://doi.org/10.1063/1.4971185
INTERDISCIPLINARY AND GENERAL PHYSICS
Nonlinear coupling of flexural mode and extensional bulk mode in micromechanical resonators
Appl. Phys. Lett. 109, 224102 (2016)
https://doi.org/10.1063/1.4970556
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
Joachim Würfl, Tomás Palacios, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.