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Highly accurate thickness measurement of multi-layered automotive paints using terahertz technology
PHOTONICS AND OPTOELECTRONICS
Enhanced electro-optic response in domain-engineered LiNbO3 channel waveguides
Appl. Phys. Lett. 109, 021101 (2016)
https://doi.org/10.1063/1.4958685
The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells
Appl. Phys. Lett. 109, 021102 (2016)
https://doi.org/10.1063/1.4955402
Optimizing single-nanoparticle two-photon microscopy by in situ adaptive control of femtosecond pulses
Appl. Phys. Lett. 109, 021103 (2016)
https://doi.org/10.1063/1.4958617
Comparative efficiency analysis of GaN-based light-emitting diodes and laser diodes
Appl. Phys. Lett. 109, 021104 (2016)
https://doi.org/10.1063/1.4958619
Highly accurate thickness measurement of multi-layered automotive paints using terahertz technology
Appl. Phys. Lett. 109, 021105 (2016)
https://doi.org/10.1063/1.4955407
Low-power four-wave mixing in porous silicon microring resonators
Appl. Phys. Lett. 109, 021106 (2016)
https://doi.org/10.1063/1.4958698
Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices
Appl. Phys. Lett. 109, 021107 (2016)
https://doi.org/10.1063/1.4958715
High-Q lattice mode matched structural resonances in terahertz metasurfaces
Appl. Phys. Lett. 109, 021108 (2016)
https://doi.org/10.1063/1.4958730
Highly uniform parallel microfabrication using a large numerical aperture system
Appl. Phys. Lett. 109, 021109 (2016)
https://doi.org/10.1063/1.4955477
On the role of diluted magnetic cobalt-doped ZnO electrodes in efficiency improvement of InGaN light emitters
Appl. Phys. Lett. 109, 021110 (2016)
https://doi.org/10.1063/1.4955488
Towards strong light-matter coupling at the single-resonator level with sub-wavelength mid-infrared nano-antennas
Appl. Phys. Lett. 109, 021111 (2016)
https://doi.org/10.1063/1.4958330
Unipolar infrared detectors based on InGaAs/InAsSb ternary superlattices
Appl. Phys. Lett. 109, 021112 (2016)
https://doi.org/10.1063/1.4958854
Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN
Appl. Phys. Lett. 109, 021113 (2016)
https://doi.org/10.1063/1.4958891
Optical effective media with independent control of permittivity and permeability based on conductive particles
Appl. Phys. Lett. 109, 021114 (2016)
https://doi.org/10.1063/1.4958987
SURFACES AND INTERFACES
Dynamic control of droplet jumping by tailoring nanoparticle concentrations
Appl. Phys. Lett. 109, 021601 (2016)
https://doi.org/10.1063/1.4958691
Electric field control of the γ-Al2O3/SrTiO3 interface conductivity at room temperature
Appl. Phys. Lett. 109, 021602 (2016)
https://doi.org/10.1063/1.4955490
Migration of liquid phase from the primary/peritectic interface in a temperature gradient
Appl. Phys. Lett. 109, 021603 (2016)
https://doi.org/10.1063/1.4958635
Critical thickness of 2D to 3D transition in GexSi1−x/Si(001) system
Appl. Phys. Lett. 109, 021604 (2016)
https://doi.org/10.1063/1.4958839
Temperature dependence of contact resistance at metal/MWNT interface
Appl. Phys. Lett. 109, 021605 (2016)
https://doi.org/10.1063/1.4958840
STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS
Charge modulation and structural transformation in TaTe2 studied by scanning tunneling microscopy/spectroscopy
Appl. Phys. Lett. 109, 021901 (2016)
https://doi.org/10.1063/1.4958616
Numerical and experimental investigation of nonlinear ultrasonic Lamb waves at low frequency
Appl. Phys. Lett. 109, 021902 (2016)
https://doi.org/10.1063/1.4958705
Advanced optical modelling of dynamically deposited silicon nitride layers
Appl. Phys. Lett. 109, 021903 (2016)
https://doi.org/10.1063/1.4958707
Tuning optical and three photon absorption properties in graphene oxide-polyvinyl alcohol free standing films
Appl. Phys. Lett. 109, 021904 (2016)
https://doi.org/10.1063/1.4955475
Ultrafast spontaneous emission modulation of graphene quantum dots interacting with Ag nanoparticles in solution
Appl. Phys. Lett. 109, 021905 (2016)
https://doi.org/10.1063/1.4958063
Direct measurement of vacancy relaxation by dilatometry
Appl. Phys. Lett. 109, 021906 (2016)
https://doi.org/10.1063/1.4958895
SEMICONDUCTORS
80 nm tunable DBR-free semiconductor disk laser
Appl. Phys. Lett. 109, 022101 (2016)
https://doi.org/10.1063/1.4958164
Zn precipitation and Li depletion in Zn implanted ZnO
Appl. Phys. Lett. 109, 022102 (2016)
https://doi.org/10.1063/1.4958693
Prediction of spin-dependent electronic structure in 3d-transition-metal doped antimonene
Appl. Phys. Lett. 109, 022103 (2016)
https://doi.org/10.1063/1.4958702
On the origin of the spatial inhomogeneity of photoluminescence in thin-film CIGS solar devices
Appl. Phys. Lett. 109, 022104 (2016)
https://doi.org/10.1063/1.4958703
Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1−xSbx type-II superlattices
Appl. Phys. Lett. 109, 022105 (2016)
https://doi.org/10.1063/1.4956351
GeSn-on-insulator substrate formed by direct wafer bonding
Appl. Phys. Lett. 109, 022106 (2016)
https://doi.org/10.1063/1.4958844
Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices
Appl. Phys. Lett. 109, 022107 (2016)
https://doi.org/10.1063/1.4958838
The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics
Appl. Phys. Lett. 109, 022108 (2016)
https://doi.org/10.1063/1.4958892
MAGNETICS AND SPINTRONICS
Modulation of the magnetic domain size induced by an electric field
Appl. Phys. Lett. 109, 022401 (2016)
https://doi.org/10.1063/1.4955265
Synthesizing skyrmion bound pairs in Fe-Gd thin films
Appl. Phys. Lett. 109, 022402 (2016)
https://doi.org/10.1063/1.4955462
Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures
Appl. Phys. Lett. 109, 022403 (2016)
https://doi.org/10.1063/1.4958295
MegaOhm extraordinary Hall effect in oxidized CoFeB
Appl. Phys. Lett. 109, 022404 (2016)
https://doi.org/10.1063/1.4958832
Magnon-based logic in a multi-terminal YIG/Pt nanostructure
Appl. Phys. Lett. 109, 022405 (2016)
https://doi.org/10.1063/1.4958893
Spin transport in p-Ge through a vertically stacked Ge/Fe3Si junction
Appl. Phys. Lett. 109, 022406 (2016)
https://doi.org/10.1063/1.4958894
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
Electrically tunable superconducting terahertz metamaterial with low insertion loss and high switchable ratios
Appl. Phys. Lett. 109, 022601 (2016)
https://doi.org/10.1063/1.4955454
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Inverse bilayer magnetoelectric thin film sensor
Appl. Phys. Lett. 109, 022901 (2016)
https://doi.org/10.1063/1.4958728
Morphotropic NaNbO3-BaTiO3-CaZrO3 lead-free ceramics with temperature-insensitive piezoelectric properties
Appl. Phys. Lett. 109, 022902 (2016)
https://doi.org/10.1063/1.4958937
NANOSCALE SCIENCE AND TECHNOLOGY
Phonon wave interference in graphene and boron nitride superlattice
Appl. Phys. Lett. 109, 023101 (2016)
https://doi.org/10.1063/1.4958688
Geometric and chemical components of the giant piezoresistance in silicon nanowires
Appl. Phys. Lett. 109, 023102 (2016)
https://doi.org/10.1063/1.4955403
Theory of multiple quantum dot formation in strained-layer heteroepitaxy
Appl. Phys. Lett. 109, 023103 (2016)
https://doi.org/10.1063/1.4955409
Photoexcited ZnO nanoparticles with controlled defects as a highly sensitive oxygen sensor
Appl. Phys. Lett. 109, 023104 (2016)
https://doi.org/10.1063/1.4958704
Epitaxial growth and electrochemical transfer of graphene on Ir(111)/α-Al2O3(0001) substrates
Appl. Phys. Lett. 109, 023105 (2016)
https://doi.org/10.1063/1.4958843
Copper vapor-assisted growth of hexagonal graphene domains on silica islands
Appl. Phys. Lett. 109, 023106 (2016)
https://doi.org/10.1063/1.4958872
All-printed capacitors from graphene-BN-graphene nanosheet heterostructures
Appl. Phys. Lett. 109, 023107 (2016)
https://doi.org/10.1063/1.4958858
GeOx interfacial layer scavenging remotely induced by metal electrode in metal/HfO2/GeOx/Ge capacitors
Appl. Phys. Lett. 109, 023108 (2016)
https://doi.org/10.1063/1.4958874
Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films
Appl. Phys. Lett. 109, 023109 (2016)
https://doi.org/10.1063/1.4958294
Size effects on negative thermal expansion in cubic ScF3
Appl. Phys. Lett. 109, 023110 (2016)
https://doi.org/10.1063/1.4959083
ORGANIC ELECTRONICS AND PHOTONICS
Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories
Appl. Phys. Lett. 109, 023301 (2016)
https://doi.org/10.1063/1.4958738
DEVICE PHYSICS
Light sensitive memristor with bi-directional and wavelength-dependent conductance control
Appl. Phys. Lett. 109, 023501 (2016)
https://doi.org/10.1063/1.4955464
Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction
Appl. Phys. Lett. 109, 023502 (2016)
https://doi.org/10.1063/1.4955480
Stress compensation for arbitrary curvature control in vanadium dioxide phase transition actuators
Appl. Phys. Lett. 109, 023504 (2016)
https://doi.org/10.1063/1.4958692
A magnetic source imaging camera
Appl. Phys. Lett. 109, 023505 (2016)
https://doi.org/10.1063/1.4958700
Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input
Appl. Phys. Lett. 109, 023506 (2016)
https://doi.org/10.1063/1.4958708
Schottky diodes from 2D germanane
Appl. Phys. Lett. 109, 023507 (2016)
https://doi.org/10.1063/1.4955463
Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy
Appl. Phys. Lett. 109, 023508 (2016)
https://doi.org/10.1063/1.4954258
Leakage and field emission in side-gate graphene field effect transistors
Appl. Phys. Lett. 109, 023510 (2016)
https://doi.org/10.1063/1.4958618
Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors
Appl. Phys. Lett. 109, 023511 (2016)
https://doi.org/10.1063/1.4958706
Reproducibility and calibration of MMC-based high-resolution gamma detectors
Appl. Phys. Lett. 109, 023513 (2016)
https://doi.org/10.1063/1.4958699
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Appl. Phys. Lett. 109, 023514 (2016)
https://doi.org/10.1063/1.4958837
Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures
Appl. Phys. Lett. 109, 023515 (2016)
https://doi.org/10.1063/1.4958851
BIOPHYSICS AND BIO-INSPIRED SYSTEMS
ENERGY CONVERSION AND STORAGE
Transition metal redox and Mn disproportional reaction in LiMn0.5Fe0.5PO4 electrodes cycled with aqueous electrolyte
Appl. Phys. Lett. 109, 023901 (2016)
https://doi.org/10.1063/1.4958639
INTERDISCIPLINARY AND GENERAL PHYSICS
Self healing of open circuit faults: With active re-configurability and mimicry of synaptic plasticity
Appl. Phys. Lett. 109, 024101 (2016)
https://doi.org/10.1063/1.4958729
Flash boiling from carbon foams for high-heat-flux transient cooling
Appl. Phys. Lett. 109, 024102 (2016)
https://doi.org/10.1063/1.4958117
Distant and wide range wireless power transfer from metamedia
Appl. Phys. Lett. 109, 024103 (2016)
https://doi.org/10.1063/1.4958741
A theoretical model for the Lorentz force particle analyzer
Appl. Phys. Lett. 109, 024104 (2016)
https://doi.org/10.1063/1.4958331
Ion velocities in the presheath of electronegative, radio-frequency plasmas measured by low-energy cutoff
Appl. Phys. Lett. 109, 024105 (2016)
https://doi.org/10.1063/1.4958836
