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Issues
7 November 2016
ISSN 0003-6951
EISSN 1077-3118
In this Issue
PHOTONICS AND OPTOELECTRONICS
Terahertz gas spectroscopy through self-mixing in a quantum-cascade laser
Appl. Phys. Lett. 109, 191101 (2016)
https://doi.org/10.1063/1.4967435
An InN/InGaN/GaN nanowire array guided wave photodiode on silicon
Appl. Phys. Lett. 109, 191102 (2016)
https://doi.org/10.1063/1.4967439
High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays
Appl. Phys. Lett. 109, 191103 (2016)
https://doi.org/10.1063/1.4967440
An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature
Appl. Phys. Lett. 109, 191106 (2016)
https://doi.org/10.1063/1.4967180
Evanescent vortex: Optical subwavelength spanner
Shengtao Mei; Kun Huang; Tianhang Zhang; Muhammad Qasim Mehmood; Hong Liu; Chwee Teck Lim; Jinghua Teng; Cheng-Wei Qiu
Appl. Phys. Lett. 109, 191107 (2016)
https://doi.org/10.1063/1.4967745
SURFACES AND INTERFACES
Asymmetric plasmon structures on ZnO: Ga for high sensitivity in the infrared range
Appl. Phys. Lett. 109, 191601 (2016)
https://doi.org/10.1063/1.4966598
Wireless actuation with functional acoustic surfaces
Appl. Phys. Lett. 109, 191602 (2016)
https://doi.org/10.1063/1.4967194
Ultrathin IBAD MgO films for epitaxial growth on amorphous substrates and sub-50 nm membranes
Appl. Phys. Lett. 109, 191603 (2016)
https://doi.org/10.1063/1.4966956
STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS
Soft tunable diffractive optics with multifunctional transparent electrodes enabling integrated actuation
Appl. Phys. Lett. 109, 191901 (2016)
https://doi.org/10.1063/1.4967001
Suppression of phonon tunneling losses by microfiber strings for high-Q membrane microresonators
Appl. Phys. Lett. 109, 191903 (2016)
https://doi.org/10.1063/1.4967496
Nonlinear propagation of stress waves during high speed cutting
Appl. Phys. Lett. 109, 191904 (2016)
https://doi.org/10.1063/1.4967514
Breaking network connectivity leads to ultralow thermal conductivities in fully dense amorphous solids
Jeffrey L. Braun; Sean W. King; Ashutosh Giri; John T. Gaskins; Masanori Sato; Takemasa Fujiseki; Hiroyuki Fujiwara; Patrick E. Hopkins
Appl. Phys. Lett. 109, 191905 (2016)
https://doi.org/10.1063/1.4967309
Optical control of plasmonic heating effects using reversible photo-alignment of nematic liquid crystals
Appl. Phys. Lett. 109, 191906 (2016)
https://doi.org/10.1063/1.4967377
Exchange coupled Mn-Mn pair: An approach for super-broadband 1380 nm emission in α-MnS
Appl. Phys. Lett. 109, 191907 (2016)
https://doi.org/10.1063/1.4967452
Atomistic simulation on the plastic deformation and fracture of bio-inspired graphene/Ni nanocomposites
Appl. Phys. Lett. 109, 191909 (2016)
https://doi.org/10.1063/1.4967793
SEMICONDUCTORS
Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode
Appl. Phys. Lett. 109, 192101 (2016)
https://doi.org/10.1063/1.4967177
Three-dimensional current collapse imaging of AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation
Takashi Katsuno; Takaaki Manaka; Tsuyoshi Ishikawa; Narumasa Soejima; Tsutomu Uesugi; Mitsumasa Iwamoto
Appl. Phys. Lett. 109, 192102 (2016)
https://doi.org/10.1063/1.4967221
Computational discovery and characterization of polymorphic two-dimensional IV–V materials
Appl. Phys. Lett. 109, 192103 (2016)
https://doi.org/10.1063/1.4967433
Probing the exciton-phonon coupling strengths of O-polar and Zn-polar ZnO wafer using hard X-ray excited optical luminescence
Bi-Hsuan Lin; Huang-Yeh Chen; Shao-Chin Tseng; Jian-Xing Wu; Bo-Yi Chen; Chien-Yu Lee; Gung-Chian Yin; Shih-Hung Chang; Mau-Tsu Tang; Wen-Feng Hsieh
Appl. Phys. Lett. 109, 192104 (2016)
https://doi.org/10.1063/1.4967743
Engineering quantum spin Hall insulators by strained-layer heterostructures
Appl. Phys. Lett. 109, 192105 (2016)
https://doi.org/10.1063/1.4967471
MAGNETICS AND SPINTRONICS
Electrical detection of magnetic domain walls by inverse and direct spin Hall effect
Appl. Phys. Lett. 109, 192401 (2016)
https://doi.org/10.1063/1.4967171
Field-angle and DC-bias dependence of spin-torque diode in giant magnetoresistive microstripe
Appl. Phys. Lett. 109, 192402 (2016)
https://doi.org/10.1063/1.4967175
Theoretical study of microwave-assisted magnetization switching in exchange coupled nano magnets
Appl. Phys. Lett. 109, 192403 (2016)
https://doi.org/10.1063/1.4967195
Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO
Appl. Phys. Lett. 109, 192405 (2016)
https://doi.org/10.1063/1.4967475
Imaging and manipulation of skyrmion lattice domains in Cu2OSeO3
Appl. Phys. Lett. 109, 192406 (2016)
https://doi.org/10.1063/1.4967499
Tunnel magnetoresistance in epitaxial (100)-oriented FeCo/LiF/FeCo magnetic tunnel junctions
Appl. Phys. Lett. 109, 192407 (2016)
https://doi.org/10.1063/1.4967473
Low-damping sub-10-nm thin films of lutetium iron garnet grown by molecular-beam epitaxy
Appl. Phys. Lett. 109, 192408 (2016)
https://doi.org/10.1063/1.4967695
Enhanced electrical conductivity and diluted Ir4+ spin orders in electron doped iridates Sr2–xGaxIrO4
Tao Han; Yongjian Wang; Jun Yang; Lei He; Junmin Xu; Dandan Liang; Hui Han; M. Ge; C. Y. Xi; W. K. Zhu; Changjin Zhang; Yuheng Zhang
Appl. Phys. Lett. 109, 192409 (2016)
https://doi.org/10.1063/1.4967699
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Giant piezoelectric response in piezoelectric/dielectric superlattices due to flexoelectric effect
Appl. Phys. Lett. 109, 192901 (2016)
https://doi.org/10.1063/1.4967003
NANOSCALE SCIENCE AND TECHNOLOGY
Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction
H. Bohuslavskyi; D. Kotekar-Patil; R. Maurand; A. Corna; S. Barraud; L. Bourdet; L. Hutin; Y.-M. Niquet; X. Jehl; S. De Franceschi; M. Vinet; M. Sanquer
Appl. Phys. Lett. 109, 193101 (2016)
https://doi.org/10.1063/1.4966946
Observation of Mg-induced structural and electronic properties of graphene
Heemin Park; Laishram Tomba Singh; Paengro Lee; Jingul Kim; Mintae Ryu; Chan-Cuk Hwang; Kwang S. Kim; Jinwook Chung
Appl. Phys. Lett. 109, 193104 (2016)
https://doi.org/10.1063/1.4967178
Lower limits of line resistance in nanocrystalline back end of line Cu interconnects
Appl. Phys. Lett. 109, 193106 (2016)
https://doi.org/10.1063/1.4967196
Particle size selection in post-spark dusty plasma in non-uniform electric field
Appl. Phys. Lett. 109, 193107 (2016)
https://doi.org/10.1063/1.4967437
Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm
M. Syperek; Ł. Dusanowski; M. Gawełczyk; G. Sȩk; A. Somers; J. P. Reithmaier; S. Höfling; J. Misiewicz
Appl. Phys. Lett. 109, 193108 (2016)
https://doi.org/10.1063/1.4966997
Photothermal characterization of MoS2 emission coupled to a microdisk cavity
Appl. Phys. Lett. 109, 193109 (2016)
https://doi.org/10.1063/1.4967187
High-performance rectifiers fabricated on a flexible substrate
Appl. Phys. Lett. 109, 193110 (2016)
https://doi.org/10.1063/1.4967190
Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices
Feng Wang; Lei Yin; Zhenxing Wang; Kai Xu; Fengmei Wang; Tofik Ahmed Shifa; Yun Huang; Yao Wen; Chao Jiang; Jun He
Appl. Phys. Lett. 109, 193111 (2016)
https://doi.org/10.1063/1.4967232
ORGANIC ELECTRONICS AND PHOTONICS
Image pixel device using integrated organic electronic components
Appl. Phys. Lett. 109, 193302 (2016)
https://doi.org/10.1063/1.4967505
DEVICE PHYSICS
Observation of three-mode parametric instability in a micromechanical resonator
Appl. Phys. Lett. 109, 193501 (2016)
https://doi.org/10.1063/1.4967007
Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition
Appl. Phys. Lett. 109, 193502 (2016)
https://doi.org/10.1063/1.4967188
Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling
In Special Collection:
The Dawn of Gallium Oxide Microelectronics
Man Hoi Wong; Yoji Morikawa; Kohei Sasaki; Akito Kuramata; Shigenobu Yamakoshi; Masataka Higashiwaki
Appl. Phys. Lett. 109, 193503 (2016)
https://doi.org/10.1063/1.4966999
Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors
Appl. Phys. Lett. 109, 193505 (2016)
https://doi.org/10.1063/1.4967434
Aberration-free and functionality-switchable meta-lenses based on tunable metasurfaces
Appl. Phys. Lett. 109, 193506 (2016)
https://doi.org/10.1063/1.4967438
BIOPHYSICS AND BIO-INSPIRED SYSTEMS
Hemorheological alterations of red blood cells induced by non-thermal dielectric barrier discharge plasma
Appl. Phys. Lett. 109, 193701 (2016)
https://doi.org/10.1063/1.4967451
Optical projection angiography
Appl. Phys. Lett. 109, 193702 (2016)
https://doi.org/10.1063/1.4967219
ENERGY CONVERSION AND STORAGE
Multiferroic cantilever for power generation using dual functionality
Appl. Phys. Lett. 109, 193901 (2016)
https://doi.org/10.1063/1.4967174
Aerodynamic modification to a circular cylinder to enhance the piezoelectric wind energy harvesting
Appl. Phys. Lett. 109, 193902 (2016)
https://doi.org/10.1063/1.4967497
Transmissive concentrator multijunction solar cells with over 47% in-band power conversion efficiency
Appl. Phys. Lett. 109, 193905 (2016)
https://doi.org/10.1063/1.4967376
INTERDISCIPLINARY AND GENERAL PHYSICS
Modifications of plasma density profile and thrust by neutral injection in a helicon plasma thruster
Appl. Phys. Lett. 109, 194101 (2016)
https://doi.org/10.1063/1.4967193
Subwavelength far-field ultrasound drug-delivery
Vincent Hingot; Marine Bézagu; Claudia Errico; Yann Desailly; Romain Bocheux; Mickael Tanter; Olivier Couture
Appl. Phys. Lett. 109, 194102 (2016)
https://doi.org/10.1063/1.4967009
Soft X-ray emission from molybdenum plasmas generated by dual laser pulses
Ragava Lokasani; Goki Arai; Yoshiki Kondo; Hiroyuki Hara; Thanh-Hung Dinh; Takeo Ejima; Tadashi Hatano; Weihua Jiang; Tetsuya Makimura; Bowen Li; Padraig Dunne; Gerry O'Sullivan; Takeshi Higashiguchi; Jiri Limpouch
Appl. Phys. Lett. 109, 194103 (2016)
https://doi.org/10.1063/1.4967310
COMMENTS
Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]
Aiswarya Pradeepkumar; Neeraj Mishra; Atieh Ranjbar Kermany; John J. Boeckl; Jack Hellerstedt; Michael S. Fuhrer; Francesca Iacopi
Appl. Phys. Lett. 109, 196102 (2016)
https://doi.org/10.1063/1.4967228
ERRATA
Publisher's Note: “Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition” [Appl. Phys. Lett. 109, 081907 (2016)]
Erik Enriquez; Yingying Zhang; Aiping Chen; Zhenxing Bi; Yongqiang Wang; Engang Fu; Zachary Harrell; Xujie Lü; Paul Dowden; Haiyan Wang; Chonglin Chen; Quanxi Jia
Appl. Phys. Lett. 109, 199901 (2016)
https://doi.org/10.1063/1.4967441
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.