Skip Nav Destination
Issues
26 September 2016
ISSN 0003-6951
EISSN 1077-3118
In this Issue
PHOTONICS AND OPTOELECTRONICS
Giant cross-polarization conversion of terahertz radiation by plasmons in an active graphene metasurface
Appl. Phys. Lett. 109, 131101 (2016)
https://doi.org/10.1063/1.4963276
A low noise optical frequency synthesizer at 700–990 nm
Appl. Phys. Lett. 109, 131102 (2016)
https://doi.org/10.1063/1.4963690
Experimental demonstration of a band-notched line-defect waveguide in a surface-wave photonic crystal
Appl. Phys. Lett. 109, 131103 (2016)
https://doi.org/10.1063/1.4963707
Photovoltaic effect in YBa2Cu3O7−δ/Nb-doped SrTiO3 heterojunctions
Appl. Phys. Lett. 109, 131104 (2016)
https://doi.org/10.1063/1.4963759
Enhancement of terahertz radiation by using circularly polarized two-color laser fields
Chao Meng; Wenbo Chen; Xiaowei Wang; Zhihui Lü; Yindong Huang; Jinlei Liu; Dongwen Zhang; Zengxiu Zhao; Jianmin Yuan
Appl. Phys. Lett. 109, 131105 (2016)
https://doi.org/10.1063/1.4963883
Characterization of optical quantum circuits using resonant phase shifts
Appl. Phys. Lett. 109, 131106 (2016)
https://doi.org/10.1063/1.4962902
A micromechanical switchable hot spot for SERS applications
Appl. Phys. Lett. 109, 131108 (2016)
https://doi.org/10.1063/1.4964123
SURFACES AND INTERFACES
Topological states of nanoscale Bi2Se3 interfaced with AlN
Appl. Phys. Lett. 109, 131601 (2016)
https://doi.org/10.1063/1.4963350
Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
Appl. Phys. Lett. 109, 131602 (2016)
https://doi.org/10.1063/1.4963656
Surface effects of electrode-dependent switching behavior of resistive random-access memory
Appl. Phys. Lett. 109, 131603 (2016)
https://doi.org/10.1063/1.4963671
Unveiling carbon dimers and their chains as precursor of graphene growth on Ru(0001)
Min Gao; Yan-Fang Zhang; Li Huang; Yi Pan; Yeliang Wang; Feng Ding; Yuan Lin; Shi-Xuan Du; Hong-Jun Gao
Appl. Phys. Lett. 109, 131604 (2016)
https://doi.org/10.1063/1.4963283
STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS
Broadband fractal acoustic metamaterials for low-frequency sound attenuation
Appl. Phys. Lett. 109, 131901 (2016)
https://doi.org/10.1063/1.4963347
Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature
C. Perrin; E. Ghegin; S. Zhiou; F. Nemouchi; P. Rodriguez; P. Gergaud; P. Maugis; D. Mangelinck; K. Hoummada
Appl. Phys. Lett. 109, 131902 (2016)
https://doi.org/10.1063/1.4963132
High speed X-ray phase contrast imaging of energetic composites under dynamic compression
Niranjan D. Parab; Zane A. Roberts; Michael H. Harr; Jesus O. Mares; Alex D. Casey; I. Emre Gunduz; Matthew Hudspeth; Benjamin Claus; Tao Sun; Kamel Fezzaa; Steven F. Son; Weinong W. Chen
Appl. Phys. Lett. 109, 131903 (2016)
https://doi.org/10.1063/1.4963137
The mechanical and acoustic properties of two-dimensional pentamode metamaterials with different structural parameters
Appl. Phys. Lett. 109, 131904 (2016)
https://doi.org/10.1063/1.4963818
Specific heat critical behavior in Bi1-xSbx solid solutions
Appl. Phys. Lett. 109, 131906 (2016)
https://doi.org/10.1063/1.4963880
Basal-plane thermal conductivity of nanocrystalline and amorphized thin germanane
Gabriella Coloyan; Nicholas D. Cultrara; Ankita Katre; Jesús Carrete; Matt Heine; Eric Ou; Jaehyun Kim; Shishi Jiang; Lucas Lindsay; Natalio Mingo; David Broido; Joseph P. Heremans; Joshua Goldberger; Li Shi
Appl. Phys. Lett. 109, 131907 (2016)
https://doi.org/10.1063/1.4963704
SEMICONDUCTORS
Sub-5 μm-thick spalled single crystal Si foils by decoupling crack initiation and propagation
Appl. Phys. Lett. 109, 132101 (2016)
https://doi.org/10.1063/1.4963292
Strain and compositional fluctuations in /GaN heterostructures
V. Portz; M. Schnedler; M. Duchamp; F.-M. Hsiao; H. Eisele; J.-F. Carlin; R. Butté; N. Grandjean; R. E. Dunin-Borkowski; Ph. Ebert
Appl. Phys. Lett. 109, 132102 (2016)
https://doi.org/10.1063/1.4963184
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
In Special Collection:
The Dawn of Gallium Oxide Microelectronics
Appl. Phys. Lett. 109, 132103 (2016)
https://doi.org/10.1063/1.4963820
Band gap reduction in InNxSb1-x alloys: Optical absorption, k P modeling, and density functional theory
W. M. Linhart; M. K. Rajpalke; J. Buckeridge; P. A. E. Murgatroyd; J. J. Bomphrey; J. Alaria; C. R. A. Catlow; D. O. Scanlon; M. J. Ashwin; T. D. Veal
Appl. Phys. Lett. 109, 132104 (2016)
https://doi.org/10.1063/1.4963836
Photosensitivity of InZnO thin-film transistors using a solution process
Appl. Phys. Lett. 109, 132105 (2016)
https://doi.org/10.1063/1.4963881
Single-photon emission at 1.5 μm from an InAs/InP quantum dot with highly suppressed multi-photon emission probabilities
T. Miyazawa; K. Takemoto; Y. Nambu; S. Miki; T. Yamashita; H. Terai; M. Fujiwara; M. Sasaki; Y. Sakuma; M. Takatsu; T. Yamamoto; Y. Arakawa
Appl. Phys. Lett. 109, 132106 (2016)
https://doi.org/10.1063/1.4961888
MAGNETICS AND SPINTRONICS
Signal asymmetries in the anomalous Hall effect of bilayer magnetic nanostructures
Appl. Phys. Lett. 109, 132401 (2016)
https://doi.org/10.1063/1.4963231
Field-free spin Hall effect driven magnetization switching in Pd/Co/IrMn exchange coupling system
W. J. Kong; Y. R. Ji; X. Zhang; H. Wu; Q. T. Zhang; Z. H. Yuan; C. H. Wan; X. F. Han; T. Yu; Kenji Fukuda; Hiroshi Naganuma; Mean-Jue Tung
Appl. Phys. Lett. 109, 132402 (2016)
https://doi.org/10.1063/1.4963235
Exploiting bistable pinning of a ferromagnetic vortex for nitrogen-vacancy spin control
Appl. Phys. Lett. 109, 132403 (2016)
https://doi.org/10.1063/1.4963670
Effect of annealing on the interfacial Dzyaloshinskii-Moriya interaction in Ta/CoFeB/MgO trilayers
Appl. Phys. Lett. 109, 132404 (2016)
https://doi.org/10.1063/1.4963731
Origin of steps in magnetization loops of martensitic Ni-Mn-Ga films on MgO(001)
Appl. Phys. Lett. 109, 132405 (2016)
https://doi.org/10.1063/1.4963264
Magnetic tunnel junction on a magnetostrictive substrate: An ultrasensitive magnetic-field sensor
Appl. Phys. Lett. 109, 132406 (2016)
https://doi.org/10.1063/1.4963788
Material parameters of perpendicularly magnetized tunnel junctions from spin torque ferromagnetic resonance techniques
Appl. Phys. Lett. 109, 132408 (2016)
https://doi.org/10.1063/1.4963354
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Domain wall orientation and domain shape in KTiOPO4 crystals
V. Ya. Shur; E. M. Vaskina; E. V. Pelegova; M. A. Chuvakova; A. R. Akhmatkhanov; O. V. Kizko; M. Ivanov; A. L. Kholkin
Appl. Phys. Lett. 109, 132901 (2016)
https://doi.org/10.1063/1.4963781
Band gap narrowing in ferroelectric KNbO3-Bi(Yb,Me)O3 (Me=Fe or Mn) ceramics
Appl. Phys. Lett. 109, 132902 (2016)
https://doi.org/10.1063/1.4963699
NANOSCALE SCIENCE AND TECHNOLOGY
Molecular beam epitaxy growth of monolayer niobium diselenide flakes
Takato Hotta; Takuto Tokuda; Sihan Zhao; Kenji Watanabe; Takashi Taniguchi; Hisanori Shinohara; Ryo Kitaura
Appl. Phys. Lett. 109, 133101 (2016)
https://doi.org/10.1063/1.4963178
Ultrathin MoS2 and WS2 layers on silver nano-tips as electron emitters
Appl. Phys. Lett. 109, 133102 (2016)
https://doi.org/10.1063/1.4963260
Molybdenum disulfide catalyzed tungsten oxide for on-chip acetone sensing
Hong Li; Sung Hoon Ahn; Sangwook Park; Lili Cai; Jiheng Zhao; Jiajun He; Minjie Zhou; Joonsuk Park; Xiaolin Zheng
Appl. Phys. Lett. 109, 133103 (2016)
https://doi.org/10.1063/1.4962946
Tailoring thermal conductivity of AlN films by periodically aligned surface nano-grooves
Appl. Phys. Lett. 109, 133107 (2016)
https://doi.org/10.1063/1.4963822
A many-body GW + BSE investigation of electronic and optical properties of C2N
Appl. Phys. Lett. 109, 133108 (2016)
https://doi.org/10.1063/1.4963654
Tensile strain in Ge membranes induced by SiGe nanostressors
Michael R. Barget; Mario Lodari; Mauro Borriello; Valeria Mondiali; Daniel Chrastina; Monica Bollani; Emiliano Bonera
Appl. Phys. Lett. 109, 133109 (2016)
https://doi.org/10.1063/1.4963657
Enabling direct silicene integration in electronics: First principles study of silicene on NiSi2(111)
Appl. Phys. Lett. 109, 133111 (2016)
https://doi.org/10.1063/1.4963653
ORGANIC ELECTRONICS AND PHOTONICS
Thin film thermistor with positive temperature coefficient of resistance based on phase separated blends of ferroelectric and semiconducting polymers
Thomas Lenz; Hamed Sharifi Dehsari; Kamal Asadi; Paul W. M. Blom; Wilhelm A. Groen; Dago M. de Leeuw
Appl. Phys. Lett. 109, 133302 (2016)
https://doi.org/10.1063/1.4963349
DEVICE PHYSICS
Charge transport in CdZnTe coplanar grid detectors examined by laser induced transient currents
Appl. Phys. Lett. 109, 133502 (2016)
https://doi.org/10.1063/1.4963353
Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM
Chih-Hung Pan; Ting-Chang Chang; Tsung-Ming Tsai; Kuan-Chang Chang; Tian-Jian Chu; Wen-Yan Lin; Min-Chen Chen; Simon M. Sze
Appl. Phys. Lett. 109, 133503 (2016)
https://doi.org/10.1063/1.4963672
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices
Appl. Phys. Lett. 109, 133504 (2016)
https://doi.org/10.1063/1.4963675
A reduced order model for dielectric elastomer actuators over a range of frequencies and prestrains
Appl. Phys. Lett. 109, 133506 (2016)
https://doi.org/10.1063/1.4963729
Role of V-pits in the performance improvement of InGaN solar cells
Muhammad Arif; Jean-Paul Salvestrini; Jérémy Streque; Matthew B. Jordan; Youssef El Gmili; Suresh Sundaram; Xin Li; Gilles Patriarche; Paul L. Voss; Abdallah Ougazzaden
Appl. Phys. Lett. 109, 133507 (2016)
https://doi.org/10.1063/1.4963817
AlGaN channel field effect transistors with graded heterostructure ohmic contacts
Appl. Phys. Lett. 109, 133508 (2016)
https://doi.org/10.1063/1.4963860
I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs
Appl. Phys. Lett. 109, 133509 (2016)
https://doi.org/10.1063/1.4963156
Single-cell bacterium identification with a SOI optical microcavity
Appl. Phys. Lett. 109, 133510 (2016)
https://doi.org/10.1063/1.4963070
ENERGY CONVERSION AND STORAGE
Enhanced thermoelectric performance of n-type transformable AgBiSe2 polymorphs by indium doping
Appl. Phys. Lett. 109, 133901 (2016)
https://doi.org/10.1063/1.4963779
Soft phonon modes driven reduced thermal conductivity in self-compensated Sn1.03Te with Mn doping
Appl. Phys. Lett. 109, 133904 (2016)
https://doi.org/10.1063/1.4963728
INTERDISCIPLINARY AND GENERAL PHYSICS
Multi-train elasto-inertial particle focusing in straight microfluidic channels
Appl. Phys. Lett. 109, 134101 (2016)
https://doi.org/10.1063/1.4963294
Six dimensional X-ray Tensor Tomography with a compact laboratory setup
Appl. Phys. Lett. 109, 134102 (2016)
https://doi.org/10.1063/1.4963649
A simple model for estimating a magnetic field in laser-driven coils
Appl. Phys. Lett. 109, 134103 (2016)
https://doi.org/10.1063/1.4963763
Methodology to set up nozzle-to-substrate gap for high resolution electrohydrodynamic jet printing
Appl. Phys. Lett. 109, 134104 (2016)
https://doi.org/10.1063/1.4963846
Fully vaporized electrical explosion of bare tungsten wire in vacuum
Appl. Phys. Lett. 109, 134105 (2016)
https://doi.org/10.1063/1.4963758
ERRATA
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Piezoelectric phononic integrated circuits
Krishna C. Balram