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Issues
12 September 2016
ISSN 0003-6951
EISSN 1077-3118
In this Issue
PHOTONICS AND OPTOELECTRONICS
Asymmetric diffraction based on a passive parity-time grating
Appl. Phys. Lett. 109, 111101 (2016)
https://doi.org/10.1063/1.4962639
Magnetic field control and wavelength tunability of SPP excitations using Al2O3/SiO2/Fe structures
Appl. Phys. Lett. 109, 111102 (2016)
https://doi.org/10.1063/1.4962653
Overtone resonance enhanced single-tube on-beam quartz enhanced photoacoustic spectrophone
Huadan Zheng; Lei Dong; Angelo Sampaolo; Pietro Patimisco; Weiguang Ma; Lei Zhang; Wangbao Yin; Liantuan Xiao; Vincenzo Spagnolo; Suotang Jia; Frank K. Tittel
Appl. Phys. Lett. 109, 111103 (2016)
https://doi.org/10.1063/1.4962810
Enhanced axial confinement in a monolithically integrated self-rolled-up SiNx vertical microring photonic coupler
Appl. Phys. Lett. 109, 111104 (2016)
https://doi.org/10.1063/1.4962901
Transparent all-dielectric gradient index waveplates with compact profiles
Appl. Phys. Lett. 109, 111105 (2016)
https://doi.org/10.1063/1.4962897
High-speed polysilicon CMOS photodetector for telecom and datacom
Appl. Phys. Lett. 109, 111106 (2016)
https://doi.org/10.1063/1.4962641
Optical far-field super-resolution microscopy using nitrogen vacancy center ensemble in bulk diamond
Appl. Phys. Lett. 109, 111107 (2016)
https://doi.org/10.1063/1.4962896
Determining helicity and topological structure of coherent vortex beam from laser speckle
Appl. Phys. Lett. 109, 111108 (2016)
https://doi.org/10.1063/1.4962952
SURFACES AND INTERFACES
Intrinsic instability of thin liquid films on nanostructured surfaces
Appl. Phys. Lett. 109, 111601 (2016)
https://doi.org/10.1063/1.4962654
Influence of the Nb growth surface on the allotropic Ti phase transformation in Nb/Ti/Nb nanolaminates
Appl. Phys. Lett. 109, 111602 (2016)
https://doi.org/10.1063/1.4962828
Interface water diffusion in silicon direct bonding
Appl. Phys. Lett. 109, 111603 (2016)
https://doi.org/10.1063/1.4962464
Inhomogeneous longitudinal distribution of Ni atoms on graphene induced by layer-number-dependent internal diffusion
Appl. Phys. Lett. 109, 111604 (2016)
https://doi.org/10.1063/1.4962840
The existence of a double S-shaped process curve during reactive magnetron sputtering
Appl. Phys. Lett. 109, 111605 (2016)
https://doi.org/10.1063/1.4962958
STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS
Rebound effect of IMT properties by different doping form in Si-doped vanadium dioxide films
Xuefei Wu; Zhiming Wu; Zhijun Liu; Chunhui Ji; Zehua Huang; Yuanjie Su; Jun Gou; Jun Wang; Yadong Jiang
Appl. Phys. Lett. 109, 111903 (2016)
https://doi.org/10.1063/1.4962815
Resonant meta-atoms with nonlinearities on demand
Appl. Phys. Lett. 109, 111904 (2016)
https://doi.org/10.1063/1.4962838
SEMICONDUCTORS
Large enhancement of positive magnetoresistance by Ce doping in Si epitaxial thin films
Appl. Phys. Lett. 109, 112101 (2016)
https://doi.org/10.1063/1.4962393
Atomic-scale quantification of interdiffusion and dopant localization in GeSbTe-based memory devices
Appl. Phys. Lett. 109, 112103 (2016)
https://doi.org/10.1063/1.4962807
First-principles predictions of electronic properties of GaAs1-x-yPyBix and GaAs1-x-yPyBix-based heterojunctions
Appl. Phys. Lett. 109, 112104 (2016)
https://doi.org/10.1063/1.4962729
MAGNETICS AND SPINTRONICS
High temperature exchange bias effect in melt-spun Mn55Bi45alloys
Yiming Song; Zhen Xiang; Taolei Wang; Junchao Niu; Kada Xia; Wei Lu; Hong Zhang; Yongze Cao; Satoru Yoshimura; Hitoshi Saito
Appl. Phys. Lett. 109, 112402 (2016)
https://doi.org/10.1063/1.4962950
Spin-orbit torques in ferrimagnetic GdFeCo alloys
Niklas Roschewsky; Tomoya Matsumura; Suraj Cheema; Frances Hellman; Takeshi Kato; Satoshi Iwata; Sayeef Salahuddin
Appl. Phys. Lett. 109, 112403 (2016)
https://doi.org/10.1063/1.4962812
Lateral electric-field-driven non-volatile four-state memory in multiferroic heterostructures
Appl. Phys. Lett. 109, 112404 (2016)
https://doi.org/10.1063/1.4962813
Observation of spin-wave Doppler shift in Co90Fe10/Ru micro-strips for evaluating spin polarization
Appl. Phys. Lett. 109, 112405 (2016)
https://doi.org/10.1063/1.4962835
Spin rectification induced by spin Hall magnetoresistance at room temperature
Appl. Phys. Lett. 109, 112406 (2016)
https://doi.org/10.1063/1.4962895
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
Suspending superconducting qubits by silicon micromachining
Appl. Phys. Lett. 109, 112601 (2016)
https://doi.org/10.1063/1.4962327
Low-noise THz MgB2 Josephson mixer
Daniel Cunnane; Jonathan H. Kawamura; Narendra Acharya; Matthäus A. Wolak; X. X. Xi; Boris S. Karasik
Appl. Phys. Lett. 109, 112602 (2016)
https://doi.org/10.1063/1.4962634
Quantum capacitance and charge sensing of a superconducting double dot
Appl. Phys. Lett. 109, 112603 (2016)
https://doi.org/10.1063/1.4962811
Code-division-multiplexed readout of large arrays of TES microcalorimeters
K. M. Morgan; B. K. Alpert; D. A. Bennett; E. V. Denison; W. B. Doriese; J. W. Fowler; J. D. Gard; G. C. Hilton; K. D. Irwin; Y. I. Joe; G. C. O'Neil; C. D. Reintsema; D. R. Schmidt; J. N. Ullom; D. S. Swetz
Appl. Phys. Lett. 109, 112604 (2016)
https://doi.org/10.1063/1.4962636
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices
Kiliha Katayama; Takao Shimizu; Osami Sakata; Takahisa Shiraishi; Syogo Nakamura; Takanori Kiguchi; Akihiro Akama; Toyohiko J. Konno; Hiroshi Uchida; Hiroshi Funakubo
Appl. Phys. Lett. 109, 112901 (2016)
https://doi.org/10.1063/1.4962431
(Ba,Sr)TiO3 tunable capacitors with RF commutation quality factors exceeding 6000
Appl. Phys. Lett. 109, 112902 (2016)
https://doi.org/10.1063/1.4961626
Tuning magnetoelectric coupling using porosity in multiferroic nanocomposites of ALD-grown Pb(Zr,Ti)O3 and templated mesoporous CoFe2O4
Diana Chien; Abraham N. Buditama; Laura T. Schelhas; Hye Yeon Kang; Shauna Robbennolt; Jane P. Chang; Sarah H. Tolbert
Appl. Phys. Lett. 109, 112904 (2016)
https://doi.org/10.1063/1.4962536
Improved magnetodielectric coefficient on polymer based composites through enhanced indirect magnetoelectric coupling
Appl. Phys. Lett. 109, 112905 (2016)
https://doi.org/10.1063/1.4963003
NANOSCALE SCIENCE AND TECHNOLOGY
Observation of electron states of small period artificial graphene in nano-patterned GaAs quantum wells
Sheng Wang; Diego Scarabelli; Yuliya Y. Kuznetsova; Shalom J. Wind; Aron Pinczuk; Vittorio Pellegrini; Michael J. Manfra; Geoff C. Gardner; Loren N. Pfeiffer; Ken W. West
Appl. Phys. Lett. 109, 113101 (2016)
https://doi.org/10.1063/1.4962461
Scanning probe microscopy and field emission schemes for studying electron emission from polycrystalline diamond
Appl. Phys. Lett. 109, 113102 (2016)
https://doi.org/10.1063/1.4962498
Electrolytic phototransistor based on graphene-MoS2 van der Waals p-n heterojunction with tunable photoresponse
Hugo Henck; Debora Pierucci; Julien Chaste; Carl H. Naylor; Jose Avila; Adrian Balan; Mathieu G. Silly; Maria C. Asensio; Fausto Sirotti; A. T Charlie Johnson; Emmanuel Lhuillier; Abdelkarim Ouerghi
Appl. Phys. Lett. 109, 113103 (2016)
https://doi.org/10.1063/1.4962551
Variability of structural and electronic properties of bulk and monolayer Si2Te3
Appl. Phys. Lett. 109, 113104 (2016)
https://doi.org/10.1063/1.4962826
Graphene rectenna for efficient energy harvesting at terahertz frequencies
Appl. Phys. Lett. 109, 113105 (2016)
https://doi.org/10.1063/1.4962642
Surface nanopattern formation due to current-induced homoepitaxial nanowire edge instability
Appl. Phys. Lett. 109, 113106 (2016)
https://doi.org/10.1063/1.4962730
Triggering piezoelectricity directly by heat to produce alternating electric voltage
Appl. Phys. Lett. 109, 113107 (2016)
https://doi.org/10.1063/1.4962904
Highly sensitive NO2 sensors by pulsed laser deposition on graphene
Margus Kodu; Artjom Berholts; Tauno Kahro; Tea Avarmaa; Aarne Kasikov; Ahti Niilisk; Harry Alles; Raivo Jaaniso
Appl. Phys. Lett. 109, 113108 (2016)
https://doi.org/10.1063/1.4962959
Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate
Appl. Phys. Lett. 109, 113109 (2016)
https://doi.org/10.1063/1.4962841
ORGANIC ELECTRONICS AND PHOTONICS
Direct determination of defect density of states in organic bulk heterojunction solar cells
Appl. Phys. Lett. 109, 113301 (2016)
https://doi.org/10.1063/1.4962827
DEVICE PHYSICS
Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection
Appl. Phys. Lett. 109, 113501 (2016)
https://doi.org/10.1063/1.4962831
Fast equilibrium switch of a micro mechanical oscillator
Anne Le Cunuder; Ignacio A. Martínez; Artyom Petrosyan; David Guéry-Odelin; Emmanuel Trizac; Sergio Ciliberto
Appl. Phys. Lett. 109, 113502 (2016)
https://doi.org/10.1063/1.4962825
Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation
Appl. Phys. Lett. 109, 113503 (2016)
https://doi.org/10.1063/1.4962894
BIOPHYSICS AND BIO-INSPIRED SYSTEMS
Investigating membrane nanoporation induced by bipolar pulsed electric fields via second harmonic generation
Appl. Phys. Lett. 109, 113701 (2016)
https://doi.org/10.1063/1.4962839
ENERGY CONVERSION AND STORAGE
A magnesium/amorphous silicon passivating contact for n-type crystalline silicon solar cells
Yimao Wan; Chris Samundsett; Di Yan; Thomas Allen; Jun Peng; Jie Cui; Xinyu Zhang; James Bullock; Andres Cuevas
Appl. Phys. Lett. 109, 113901 (2016)
https://doi.org/10.1063/1.4962960
INTERDISCIPLINARY AND GENERAL PHYSICS
Flash post-discharge emission in a reactive HiPIMS process
Appl. Phys. Lett. 109, 114101 (2016)
https://doi.org/10.1063/1.4962486
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.