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28 March 2016
ISSN 0003-6951
EISSN 1077-3118
In this Issue
PHOTONICS AND OPTOELECTRONICS
High-speed modulator with interleaved junctions in zero-change CMOS photonics
Appl. Phys. Lett. 108, 131101 (2016)
https://doi.org/10.1063/1.4944999
Controlling the state of polarization via optical nanoantenna feeding with surface plasmon polaritons
Appl. Phys. Lett. 108, 131102 (2016)
https://doi.org/10.1063/1.4944896
Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance
Appl. Phys. Lett. 108, 131103 (2016)
https://doi.org/10.1063/1.4944998
Magneto-optical metamaterials with extraordinarily strong magneto-optical effect
Appl. Phys. Lett. 108, 131104 (2016)
https://doi.org/10.1063/1.4945051
Perforated hollow-core optical waveguides for on-chip atomic spectroscopy and gas sensing
Appl. Phys. Lett. 108, 131105 (2016)
https://doi.org/10.1063/1.4945092
Experimental implementation of a nonlinear beamsplitter based on a phase-sensitive parametric amplifier
Appl. Phys. Lett. 108, 131106 (2016)
https://doi.org/10.1063/1.4945260
Bistable random laser that uses a phase transition of polyethylene glycol
Appl. Phys. Lett. 108, 131107 (2016)
https://doi.org/10.1063/1.4945093
Athermal avalanche in bilayer superconducting nanowire single-photon detectors
Appl. Phys. Lett. 108, 131108 (2016)
https://doi.org/10.1063/1.4945595
High power cascade diode lasers emitting near 2 μm
Appl. Phys. Lett. 108, 131109 (2016)
https://doi.org/10.1063/1.4944553
Boron nitride encapsulated graphene infrared emitters
Appl. Phys. Lett. 108, 131110 (2016)
https://doi.org/10.1063/1.4945371
Using electric pulse and laser to trigger a sharp and nonvolatile change of lateral photovoltage in nano-carbon film
Appl. Phys. Lett. 108, 131111 (2016)
https://doi.org/10.1063/1.4945451
SURFACES AND INTERFACES
STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS
Ellipsometric investigation of ZnFe2O4 thin films in relation to magnetic properties
Appl. Phys. Lett. 108, 131901 (2016)
https://doi.org/10.1063/1.4944898
Temperature-independent zero-birefringence polymer for liquid crystal displays
Appl. Phys. Lett. 108, 131902 (2016)
https://doi.org/10.1063/1.4944947
Plasmon–phonon coupling in monolayer WS2
Appl. Phys. Lett. 108, 131903 (2016)
https://doi.org/10.1063/1.4944948
Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation
Yi Zhang; Murad J. Y. Tayebjee; Suntrana Smyth; Miroslav Dvořák; Xiaoming Wen; Hongze Xia; Martin Heilmann; Yuanxun Liao; Zewen Zhang; Todd Williamson; Joshua Williams; Stephen Bremner; Santosh Shrestha; Shujuan Huang; Timothy W. Schmidt; Gavin J. Conibeer
Appl. Phys. Lett. 108, 131904 (2016)
https://doi.org/10.1063/1.4945594
SEMICONDUCTORS
CMOS-compatible method for doping of buried vertical polysilicon structures by solid phase diffusion
Appl. Phys. Lett. 108, 132101 (2016)
https://doi.org/10.1063/1.4944778
Structured back gates for high-mobility two-dimensional electron systems using oxygen ion implantation
Appl. Phys. Lett. 108, 132102 (2016)
https://doi.org/10.1063/1.4945090
Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy
Appl. Phys. Lett. 108, 132103 (2016)
https://doi.org/10.1063/1.4945100
A class of monolayer metal halogenides MX2: Electronic structures and band alignments
Appl. Phys. Lett. 108, 132104 (2016)
https://doi.org/10.1063/1.4945366
Exciton binding energy in bulk MoS2: A reassessment
Appl. Phys. Lett. 108, 132105 (2016)
https://doi.org/10.1063/1.4945047
High pressure-assisted transfer of ultraclean chemical vapor deposited graphene
Appl. Phys. Lett. 108, 132106 (2016)
https://doi.org/10.1063/1.4945431
MAGNETICS AND SPINTRONICS
Gate-controlled switching between persistent and inverse persistent spin helix states
Appl. Phys. Lett. 108, 132402 (2016)
https://doi.org/10.1063/1.4944931
Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory
Appl. Phys. Lett. 108, 132403 (2016)
https://doi.org/10.1063/1.4944996
MgAl2O4(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target
Appl. Phys. Lett. 108, 132404 (2016)
https://doi.org/10.1063/1.4945049
[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications
E. Liu; J. Swerts; S. Couet; S. Mertens; Y. Tomczak; T. Lin; V. Spampinato; A. Franquet; S. Van Elshocht; G. Kar; A. Furnemont; J. De Boeck
Appl. Phys. Lett. 108, 132405 (2016)
https://doi.org/10.1063/1.4945089
Skyrmions in thin films with easy-plane magnetocrystalline anisotropy
Mark Vousden; Maximilian Albert; Marijan Beg; Marc-Antonio Bisotti; Rebecca Carey; Dmitri Chernyshenko; David Cortés-Ortuño; Weiwei Wang; Ondrej Hovorka; Christopher H. Marrows; Hans Fangohr
Appl. Phys. Lett. 108, 132406 (2016)
https://doi.org/10.1063/1.4945262
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
Coherent acoustic phonons in YBa2Cu3O7/La1/3Ca2/3MnO3 superlattices
Wei Li; Bin He; Chunfeng Zhang; Shenghua Liu; Xiaoran Liu; S. Middey; J. Chakhalian; Xiaoyong Wang; Min Xiao
Appl. Phys. Lett. 108, 132601 (2016)
https://doi.org/10.1063/1.4945333
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Internal electrical and strain fields influence on the electrical tunability of epitaxial Ba0.7Sr0.3TiO3 thin films
In Special Collection:
Negative Capacitance Field Effect Transistors
Appl. Phys. Lett. 108, 132901 (2016)
https://doi.org/10.1063/1.4944997
Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films
J. C. Frederick; T. H. Kim; W. Maeng; A. A. Brewer; J. P. Podkaminer; W. Saenrang; V. Vaithyanathan; F. Li; L.-Q. Chen; D. G. Schlom; S. Trolier-McKinstry; M. S. Rzchowski; C. B. Eom
Appl. Phys. Lett. 108, 132902 (2016)
https://doi.org/10.1063/1.4944774
ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
Appl. Phys. Lett. 108, 132904 (2016)
https://doi.org/10.1063/1.4945430
NANOSCALE SCIENCE AND TECHNOLOGY
Observation of a scrolled graphene nanoribbons with gap-plasmonic system
Appl. Phys. Lett. 108, 133101 (2016)
https://doi.org/10.1063/1.4944895
ORGANIC ELECTRONICS AND PHOTONICS
Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device
Appl. Phys. Lett. 108, 133301 (2016)
https://doi.org/10.1063/1.4945087
DEVICE PHYSICS
Enhanced electrocaloric effect in composition gradient bilayer thick films
Appl. Phys. Lett. 108, 133501 (2016)
https://doi.org/10.1063/1.4944409
A charge inverter for III-nitride light-emitting diodes
Appl. Phys. Lett. 108, 133502 (2016)
https://doi.org/10.1063/1.4945257
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy
In Special Collection:
The Dawn of Gallium Oxide Microelectronics
Masataka Higashiwaki; Keita Konishi; Kohei Sasaki; Ken Goto; Kazushiro Nomura; Quang Tu Thieu; Rie Togashi; Hisashi Murakami; Yoshinao Kumagai; Bo Monemar; Akinori Koukitu; Akito Kuramata; Shigenobu Yamakoshi
Appl. Phys. Lett. 108, 133503 (2016)
https://doi.org/10.1063/1.4945267
ENERGY CONVERSION AND STORAGE
Enhanced triboelectrification of the polydimethylsiloxane surface by ultraviolet irradiation
Appl. Phys. Lett. 108, 133901 (2016)
https://doi.org/10.1063/1.4945052
Efficient thermoelectric energy conversion in Pb0.95Mn0.05Te p-n couple
K. Dybko; M. Szot; A. Mycielski; A. Szczerbakow; P. Dziawa; M. Guziewicz; W. Knoff; E. Łusakowska; T. Story
Appl. Phys. Lett. 108, 133902 (2016)
https://doi.org/10.1063/1.4945096
INTERDISCIPLINARY AND GENERAL PHYSICS
Robust acoustic wave manipulation of bubbly liquids
Appl. Phys. Lett. 108, 134102 (2016)
https://doi.org/10.1063/1.4944893
Piezoelectric tube rotation effect owing to surface acoustic wave excitation
Appl. Phys. Lett. 108, 134103 (2016)
https://doi.org/10.1063/1.4945050
Active control of flow boiling oscillation amplitude and frequency using a transverse jet in crossflow
Appl. Phys. Lett. 108, 134104 (2016)
https://doi.org/10.1063/1.4945334
Ultra low emittance electron beams from multi-alkali antimonide photocathode operated with infrared light
Appl. Phys. Lett. 108, 134105 (2016)
https://doi.org/10.1063/1.4945091
ERRATA
Erratum: “Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions” [Appl. Phys. Lett. 98, 022501 (2011)]
D. C. Worledge; G. Hu; David W. Abraham; J. Z. Sun; P. L. Trouilloud; J. Nowak; S. Brown; M. C. Gaidis; E. J. O'Sullivan; R. P. Robertazzi
Appl. Phys. Lett. 108, 139901 (2016)
https://doi.org/10.1063/1.4945255
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.