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Issues
24 June 2013
ISSN 0003-6951
EISSN 1077-3118
In this Issue
PHOTONICS AND OPTOELECTRONICS
Ultraviolet laser diodes grown on semipolar GaN substrates by plasma-assisted molecular beam epitaxy
M. Sawicka; G. Muziol; H. Turski; S. Grzanka; E. Grzanka; J. Smalc-Koziorowska; J. L. Weyher; C. Chèze; M. Albrecht; R. Kucharski; P. Perlin; C. Skierbiszewski
Appl. Phys. Lett. 102, 251101 (2013)
https://doi.org/10.1063/1.4812201
Laser-induced periodic annular surface structures on fused silica surface
Yi Liu; Yohann Brelet; Zhanbing He; Linwei Yu; Benjamin Forestier; Yongkai Deng; Hongbing Jiang; Aurélien Houard
Appl. Phys. Lett. 102, 251103 (2013)
https://doi.org/10.1063/1.4812354
Comparative analysis of and semipolar GaN light emitting diodes using atom probe tomography
Appl. Phys. Lett. 102, 251104 (2013)
https://doi.org/10.1063/1.4812363
Level set based topology optimization for optical cloaks
Appl. Phys. Lett. 102, 251106 (2013)
https://doi.org/10.1063/1.4812471
Broadband absorption enhancement of organic solar cells with interstitial lattice patterned metal nanoparticles
Appl. Phys. Lett. 102, 251112 (2013)
https://doi.org/10.1063/1.4812517
In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy
M. Gschrey; F. Gericke; A. Schüßler; R. Schmidt; J.-H. Schulze; T. Heindel; S. Rodt; A. Strittmatter; S. Reitzenstein
Appl. Phys. Lett. 102, 251113 (2013)
https://doi.org/10.1063/1.4812343
Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop
David S. Meyaard; Guan-Bo Lin; Jaehee Cho; E. Fred Schubert; Hyunwook Shim; Sang-Heon Han; Min-Ho Kim; Cheolsoo Sone; Young Sun Kim
Appl. Phys. Lett. 102, 251114 (2013)
https://doi.org/10.1063/1.4811558
Exciton-plasmon coupling mediated photorefractivity in gold-nanoparticle- and quantum-dot-dispersed polymers
Appl. Phys. Lett. 102, 251115 (2013)
https://doi.org/10.1063/1.4812720
Coarse wavelength division (de)multiplexer using an interleaved angled multimode interferometer structure
Appl. Phys. Lett. 102, 251116 (2013)
https://doi.org/10.1063/1.4812746
Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy
Appl. Phys. Lett. 102, 251117 (2013)
https://doi.org/10.1063/1.4812747
Terahertz emission from a GaAs/AlAs coupled multilayer cavity with nonlinear optical susceptibility inversion
Appl. Phys. Lett. 102, 251118 (2013)
https://doi.org/10.1063/1.4813012
Vertically aligned rolled-up SiO2 optical microcavities in add-drop configuration
Appl. Phys. Lett. 102, 251119 (2013)
https://doi.org/10.1063/1.4812661
Planar silicon nitride mid-infrared devices
Appl. Phys. Lett. 102, 251121 (2013)
https://doi.org/10.1063/1.4812332
Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes
Sang-Heon Han; Dong-Yul Lee; Hyun-Wook Shim; Jeong Wook Lee; Dong-Joon Kim; Sukho Yoon; Young Sun Kim; Sung-Tae Kim
Appl. Phys. Lett. 102, 251123 (2013)
https://doi.org/10.1063/1.4812810
SURFACES AND INTERFACES
ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
Appl. Phys. Lett. 102, 251601 (2013)
https://doi.org/10.1063/1.4812475
Stoichiometry control of the electronic properties of the heterointerface
Appl. Phys. Lett. 102, 251602 (2013)
https://doi.org/10.1063/1.4812353
Superhydrophobic Zr-based metallic glass surface with high adhesive force
Appl. Phys. Lett. 102, 251603 (2013)
https://doi.org/10.1063/1.4812480
Room temperature wafer direct bonding of smooth Si surfaces recovered by Ne beam surface treatments
Appl. Phys. Lett. 102, 251605 (2013)
https://doi.org/10.1063/1.4812742
The influence of interface bonding on thermal transport through solid–liquid interfaces
Appl. Phys. Lett. 102, 251606 (2013)
https://doi.org/10.1063/1.4812749
Intensity asymmetry of the (00) diffracted spin-polarized electron beam scattered from W(110): Azimuthal dependence
Sergey Samarin; James Williams; Oleg Artamonov; Luka Pravica; Kathi Sudarshan; Paul Guagliardo; Franz Giebels; Herbert Gollisch; Roland Feder
Appl. Phys. Lett. 102, 251607 (2013)
https://doi.org/10.1063/1.4812751
STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS
Effects of sequential tungsten and helium ion implantation on nano-indentation hardness of tungsten
Appl. Phys. Lett. 102, 251901 (2013)
https://doi.org/10.1063/1.4811825
Nonlinear damping for vibration isolation of microsystems using shear thickening fluid
Appl. Phys. Lett. 102, 251902 (2013)
https://doi.org/10.1063/1.4812192
Using nanopillars of silicon oxide as a versatile platform for visualizing a selective immunosorbent
Appl. Phys. Lett. 102, 251903 (2013)
https://doi.org/10.1063/1.4812340
Phase field approach to interaction of phase transformation and dislocation evolution
Appl. Phys. Lett. 102, 251904 (2013)
https://doi.org/10.1063/1.4812488
Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
Tongtong Zhu; Fabrice Oehler; Benjamin P. L. Reid; Robert M. Emery; Robert A. Taylor; Menno J. Kappers; Rachel A. Oliver
Appl. Phys. Lett. 102, 251905 (2013)
https://doi.org/10.1063/1.4812345
Remarkable optical limiting and stabilization effects of a malononitrile derivative on 1064 nm pulsed laser
Appl. Phys. Lett. 102, 251906 (2013)
https://doi.org/10.1063/1.4812402
Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment
Appl. Phys. Lett. 102, 251907 (2013)
https://doi.org/10.1063/1.4812490
Light tunneling effect tuned by a meta-interface with electromagnetically-induced-transparency-like properties
Appl. Phys. Lett. 102, 251908 (2013)
https://doi.org/10.1063/1.4810020
Mechanical properties of FeCo magnetic particles-based Sn-Ag-Cu solder composites
Appl. Phys. Lett. 102, 251909 (2013)
https://doi.org/10.1063/1.4812467
Submicron mapping of strain distributions induced by three-dimensional through-silicon via features
Appl. Phys. Lett. 102, 251910 (2013)
https://doi.org/10.1063/1.4812481
Thermal transport in organic semiconducting polymers
Appl. Phys. Lett. 102, 251912 (2013)
https://doi.org/10.1063/1.4812234
Resonance running hologram velocity nonlinearity dependence upon light intensity in photorefractive crystals
Appl. Phys. Lett. 102, 251913 (2013)
https://doi.org/10.1063/1.4812347
SEMICONDUCTORS
Development of high quantum efficiency GaAs/GaInP double heterostructures for laser cooling
Appl. Phys. Lett. 102, 252102 (2013)
https://doi.org/10.1063/1.4811759
Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material
Appl. Phys. Lett. 102, 252106 (2013)
https://doi.org/10.1063/1.4812829
Electron spin dynamics and g-factor in GaAsBi
S. Mazzucato; T. T. Zhang; H. Carrère; D. Lagarde; P. Boonpeng; A. Arnoult; G. Lacoste; A. Balocchi; T. Amand; C. Fontaine; X. Marie
Appl. Phys. Lett. 102, 252107 (2013)
https://doi.org/10.1063/1.4812660
Large area single crystal (0001) oriented MoS2
Masihhur R. Laskar; Lu Ma; Santhakumar Kannappan; Pil Sung Park; Sriram Krishnamoorthy; Digbijoy N. Nath; Wu Lu; Yiying Wu; Siddharth Rajan
Appl. Phys. Lett. 102, 252108 (2013)
https://doi.org/10.1063/1.4811410
MAGNETICS AND SPINTRONICS
Crucial role played by interface and oxygen content in magnetic properties of ultrathin manganite films
Cong Wang; Kui-juan Jin; Lin Gu; Hui-bin Lu; Shan-ming Li; Wen-jia Zhou; Rui-qiang Zhao; Hai-zhong Guo; Meng He; Guo-zhen Yang
Appl. Phys. Lett. 102, 252401 (2013)
https://doi.org/10.1063/1.4812302
Coherent and incoherent spin torque oscillations in a nanopillar magnetic spin-valve
Appl. Phys. Lett. 102, 252402 (2013)
https://doi.org/10.1063/1.4812299
Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures
Appl. Phys. Lett. 102, 252403 (2013)
https://doi.org/10.1063/1.4812663
Hydrogenation induced reversible modulation of perpendicular magnetic coercivity in Pd/Co/Pd films
Appl. Phys. Lett. 102, 252404 (2013)
https://doi.org/10.1063/1.4812664
Detection of edge magnetic state by a ballistic bend resistance measurement
Appl. Phys. Lett. 102, 252405 (2013)
https://doi.org/10.1063/1.4812729
Positive exchange bias in thin film multilayers produced with nano-oxide layer
Byong Sun Chun; Ho-Hyun Nahm; Mohamed Abid; Han-Chun Wu; Yong-Sung Kim; In Chang Chu; Chanyong Hwang
Appl. Phys. Lett. 102, 252406 (2013)
https://doi.org/10.1063/1.4812748
Investigating the contribution of superdiffusive transport to ultrafast demagnetization of ferromagnetic thin films
Appl. Phys. Lett. 102, 252408 (2013)
https://doi.org/10.1063/1.4812658
Effect of the magnetic film thickness on the enhancement of the spin current by multi-magnon processes
Appl. Phys. Lett. 102, 252409 (2013)
https://doi.org/10.1063/1.4812812
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
Thermo-magnetic stability of superconducting films controlled by nano-morphology
Appl. Phys. Lett. 102, 252601 (2013)
https://doi.org/10.1063/1.4812484
Highly effective superconducting vortex pinning in conformal crystals
Appl. Phys. Lett. 102, 252602 (2013)
https://doi.org/10.1063/1.4811413
Dependence of the microwave surface resistance of superconducting niobium on the magnitude of the rf field
Appl. Phys. Lett. 102, 252603 (2013)
https://doi.org/10.1063/1.4812665
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Nanoclusters of MoO3−x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength
William M. Tong; Alan D. Brodie; Anil U. Mane; Fuge Sun; Françoise Kidwingira; Mark A. McCord; Christopher F. Bevis; Jeffrey W. Elam
Appl. Phys. Lett. 102, 252901 (2013)
https://doi.org/10.1063/1.4811480
Insertion of a Si layer to reduce operation current for resistive random access memory applications
Yu-Ting Chen; Ting-Chang Chang; Han-Kuang Peng; Hsueh-Chih Tseng; Jheng-Jie Huang; Jyun-Bao Yang; Ann-Kuo Chu; Tai-Fa Young; Simon M. Sze
Appl. Phys. Lett. 102, 252902 (2013)
https://doi.org/10.1063/1.4812304
Optimized electrocaloric refrigeration capacity in lead-free (1−x)BaZr0.2Ti0.8O3-xBa0.7Ca0.3TiO3 ceramics
Appl. Phys. Lett. 102, 252904 (2013)
https://doi.org/10.1063/1.4810916
Electro-photo double modulation on the resistive switching behavior and switchable photoelectric effect in BiFeO3 films
Appl. Phys. Lett. 102, 252907 (2013)
https://doi.org/10.1063/1.4812825
NANOSCALE SCIENCE AND TECHNOLOGY
Ligament coarsening in nanoporous gold: Insights from positron annihilation study
Appl. Phys. Lett. 102, 253101 (2013)
https://doi.org/10.1063/1.4812290
Magnetic nanoparticles of core-shell structure for recoverable photocatalysts
Appl. Phys. Lett. 102, 253102 (2013)
https://doi.org/10.1063/1.4811764
Zinc oxide inverse opal enzymatic biosensor
Appl. Phys. Lett. 102, 253103 (2013)
https://doi.org/10.1063/1.4811411
Correlation of doping, structure, and carrier dynamics in a single GaN nanorod
Appl. Phys. Lett. 102, 253104 (2013)
https://doi.org/10.1063/1.4812241
Excitation of terahertz plasmon-polariton in a grating coupled two-dimensional electron gas with a Fabry-Pérot cavity
Yongdan Huang (黄永丹); Hua Qin (秦华); Baoshun Zhang (张宝顺); Jingbo Wu (吴敬波); Gaochao Zhou (周高潮); Biaobing Jin (金飚兵)
Appl. Phys. Lett. 102, 253106 (2013)
https://doi.org/10.1063/1.4812359
Characterization of ultrananocrystalline diamond microsensors for in vivo dopamine detection
Appl. Phys. Lett. 102, 253107 (2013)
https://doi.org/10.1063/1.4811785
From nanographene to monolayer graphene on 6H-SiC(0001) substrate
Appl. Phys. Lett. 102, 253108 (2013)
https://doi.org/10.1063/1.4812516
Tracking emission rate dynamics of nitrogen vacancy centers in nanodiamonds
Appl. Phys. Lett. 102, 253109 (2013)
https://doi.org/10.1063/1.4812711
ORGANIC ELECTRONICS AND PHOTONICS
Diffusive capacitance in space charge limited organic diodes: Analysis of peak in capacitance-voltage characteristics
Appl. Phys. Lett. 102, 253303 (2013)
https://doi.org/10.1063/1.4812487
DEVICE PHYSICS
Transparent and flexible multi-layer films with graphene recording layers for optical data storage
Appl. Phys. Lett. 102, 253501 (2013)
https://doi.org/10.1063/1.4812473
Two opposite hysteresis curves in semiconductors with mobile dopants
Appl. Phys. Lett. 102, 253503 (2013)
https://doi.org/10.1063/1.4811556
Field-accelerated structural relaxation in the amorphous state of phase change memory
Appl. Phys. Lett. 102, 253505 (2013)
https://doi.org/10.1063/1.4812352
Investigation of ripple-limited low-field mobility in large-scale graphene nanoribbons
Appl. Phys. Lett. 102, 253506 (2013)
https://doi.org/10.1063/1.4811761
Performance and characteristics of double layer porous silicon oxide resistance random access memory
Tsung-Ming Tsai; Kuan-Chang Chang; Rui Zhang; Ting-Chang Chang; J. C. Lou; Jung-Hui Chen; Tai-Fa Young; Bae-Heng Tseng; Chih-Cheng Shih; Yin-Chih Pan; Min-Chen Chen; Jhih-Hong Pan; Yong-En Syu; Simon M. Sze
Appl. Phys. Lett. 102, 253509 (2013)
https://doi.org/10.1063/1.4812474
BIOPHYSICS AND BIO-INSPIRED SYSTEMS
Biomolecule recognition using piezoresistive nanomechanical force probes
Appl. Phys. Lett. 102, 253701 (2013)
https://doi.org/10.1063/1.4812469
Visibility graph analysis on heartbeat dynamics of meditation training
Appl. Phys. Lett. 102, 253702 (2013)
https://doi.org/10.1063/1.4812645
ENERGY CONVERSION AND STORAGE
Large transverse thermoelectric voltage effect in incline-oriented SrTi1−xNbxO3 films with cubic structure
Appl. Phys. Lett. 102, 253901 (2013)
https://doi.org/10.1063/1.4812358
Carbon-doped GaAs single junction solar microcells grown in multilayer epitaxial assemblies
Appl. Phys. Lett. 102, 253902 (2013)
https://doi.org/10.1063/1.4812399
Effect of substrate on thermoelectric properties of Al-doped ZnO thin films
Appl. Phys. Lett. 102, 253903 (2013)
https://doi.org/10.1063/1.4812401
INTERDISCIPLINARY AND GENERAL PHYSICS
Standoff alpha radiation detection via excited state absorption of air
Appl. Phys. Lett. 102, 254101 (2013)
https://doi.org/10.1063/1.4812338
Assessing diffusion barriers for phase change memory devices using the magnetization of Fe
Appl. Phys. Lett. 102, 254102 (2013)
https://doi.org/10.1063/1.4812644
ERRATA
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.