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17 December 2012
ISSN 0003-6951
EISSN 1077-3118
In this Issue
PHOTONICS AND OPTOELECTRONICS
A simplified GaN/AlGaN quantum cascade detector with an alloy extractor
Appl. Phys. Lett. 101, 251101 (2012)
https://doi.org/10.1063/1.4772501
Three-dimensional localization of fluorescent targets in turbid media using time reversal optical tomography
Appl. Phys. Lett. 101, 251103 (2012)
https://doi.org/10.1063/1.4771997
Ultrafast polarization modulation in vertical cavity surface emitting lasers with frequency dependent current injection
Appl. Phys. Lett. 101, 251104 (2012)
https://doi.org/10.1063/1.4772540
Mode latching and self tuning of whispering gallery modes in a stand-alone silica microsphere
Appl. Phys. Lett. 101, 251105 (2012)
https://doi.org/10.1063/1.4772629
2.8 μm emission from type-I quantum wells grown on InAsxP1−x/InP metamorphic graded buffers
Appl. Phys. Lett. 101, 251107 (2012)
https://doi.org/10.1063/1.4773024
Electrical modulation of the optical properties of mid-infrared metamaterials
K. Larsen; D. Austin; I. C. Sandall; D. G. Davies; D. G. Revin; J. W. Cockburn; A. M. Adawi; R. J. Airey; P. W. Fry; M. Hopkinson; L. R. Wilson
Appl. Phys. Lett. 101, 251109 (2012)
https://doi.org/10.1063/1.4772545
Local photocurrent generation in thin films of the topological insulator
Appl. Phys. Lett. 101, 251110 (2012)
https://doi.org/10.1063/1.4772547
Energy transfer between few-cycle laser filaments in air
Appl. Phys. Lett. 101, 251111 (2012)
https://doi.org/10.1063/1.4772591
Three-dimensional Maxwell-Bloch calculation of the temporal profile of a seeded soft x-ray laser pulse
Appl. Phys. Lett. 101, 251112 (2012)
https://doi.org/10.1063/1.4773208
Experimental demonstration of a four-port photonic crystal cross-waveguide structure
Appl. Phys. Lett. 101, 251113 (2012)
https://doi.org/10.1063/1.4772942
A three-dimensional, polarization-insensitive superconducting nanowire avalanche photodetector
Appl. Phys. Lett. 101, 251114 (2012)
https://doi.org/10.1063/1.4768788
Effect of the number of quantum dot layers and dual state emission on the performance of InAs/InGaAs passively mode-locked lasers
Charis Mesaritakis; Christos Simos; Hercules Simos; Alexandros Kapsalis; Eugenia Roditi; Igor Krestnikov; Dimitris Syvridis
Appl. Phys. Lett. 101, 251115 (2012)
https://doi.org/10.1063/1.4772592
Femtosecond laser induced surface deformation in multi-dimensional data storage
Appl. Phys. Lett. 101, 251116 (2012)
https://doi.org/10.1063/1.4772937
Efficient coupler between silicon photonic and metal-insulator-silicon-metal plasmonic waveguides
A. Emboras; R. M. Briggs; A. Najar; S. Nambiar; C. Delacour; Ph. Grosse; E. Augendre; J. M. Fedeli; B. de Salvo; H. A. Atwater; R. Espiau de Lamaestre
Appl. Phys. Lett. 101, 251117 (2012)
https://doi.org/10.1063/1.4772941
Polarization-resolved resonant fluorescence of a single semiconductor quantum dot
Appl. Phys. Lett. 101, 251118 (2012)
https://doi.org/10.1063/1.4772495
Sub-diffraction optical coherent control of ultrafast electrical currents in antenna devices on GaAs
Appl. Phys. Lett. 101, 251119 (2012)
https://doi.org/10.1063/1.4773028
Widely tuned room temperature terahertz quantum cascade laser sources based on difference-frequency generation
Appl. Phys. Lett. 101, 251121 (2012)
https://doi.org/10.1063/1.4773189
SURFACES AND INTERFACES
Identifying graphene layers via spin Hall effect of light
Appl. Phys. Lett. 101, 251602 (2012)
https://doi.org/10.1063/1.4772502
Controlled manipulation of wetting characteristics of nanoparticles with dry-based plasma polymerization method
Appl. Phys. Lett. 101, 251603 (2012)
https://doi.org/10.1063/1.4772544
Investigation of photoelectrochemical-oxidized p-GaSb films
Hsin-Ying Lee; Hung-Lin Huang; Ching-Ting Lee; Oleg Petrovich Pchelyakov; Nikolay Andreevich Pakhanov
Appl. Phys. Lett. 101, 251604 (2012)
https://doi.org/10.1063/1.4772497
Writing charge into the n-type LaAlO3/SrTiO3 interface: A theoretical study of the H2O kinetics on the top AlO2 surface
Appl. Phys. Lett. 101, 251605 (2012)
https://doi.org/10.1063/1.4772499
The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces
Appl. Phys. Lett. 101, 251606 (2012)
https://doi.org/10.1063/1.4772980
Preparation of atomically flat SrTiO3 surfaces using a deionized-water leaching and thermal annealing procedure
Appl. Phys. Lett. 101, 251607 (2012)
https://doi.org/10.1063/1.4773052
STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS
Temperature insensitive negative Poisson's ratios in isotropic alloys near a morphotropic phase boundary
Appl. Phys. Lett. 101, 251903 (2012)
https://doi.org/10.1063/1.4772940
Thermoelectric magnetic force acting on the solid during directional solidification under a static magnetic field
J. Wang (王江); Y. Fautrelle; Z. M. Ren (任忠鸣); X. Li (李喜); H. Nguyen-Thi; N. Mangelinck-Noel; G. Salloum Abou Jaoude; Y. B. Zhong (钟云波); I. Kaldre; A. Bojarevics; L. Buligins
Appl. Phys. Lett. 101, 251904 (2012)
https://doi.org/10.1063/1.4772510
Ion-induced grain growth and texturing in refractory thin films—A low temperature process
Appl. Phys. Lett. 101, 251905 (2012)
https://doi.org/10.1063/1.4772640
Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys
C. Cornet; T. Nguyen Thanh; T. Quinci; S. Almosni; T. Rohel; J. Kuyyalil; A. Rambaud; A. Létoublon; N. Bertru; O. Durand; A. Le Corre
Appl. Phys. Lett. 101, 251906 (2012)
https://doi.org/10.1063/1.4772785
Electrochromic switchable mirror glass fabricated using adhesive electrolyte layer
Appl. Phys. Lett. 101, 251907 (2012)
https://doi.org/10.1063/1.4772938
ErN and HoN spherical regenerator materials for 4 K cryocoolers
T. Nakano; S. Masuyama; Y. Hirayama; T. Izawa; T. Nakagawa; Y. Fujimoto; T. Irie; E. Nakamura; T. A. Yamamoto
Appl. Phys. Lett. 101, 251908 (2012)
https://doi.org/10.1063/1.4772531
Structural and electronic properties of GaAs0.64P0.19Sb0.17 on GaAs
Appl. Phys. Lett. 101, 251910 (2012)
https://doi.org/10.1063/1.4772550
Spatial and orientational control of liquid crystal alignment using a surface localized polymer layer
Appl. Phys. Lett. 101, 251912 (2012)
https://doi.org/10.1063/1.4773010
Large reduction in thermal conductivity for Ge quantum dots embedded in SiO2 system
Appl. Phys. Lett. 101, 251913 (2012)
https://doi.org/10.1063/1.4773204
Enhanced magneto-impedance in Fe73.5Cu1Nb3Si13.5B9 ribbons from laminating with magnetostrictive terfenol-D alloy plate
Appl. Phys. Lett. 101, 251914 (2012)
https://doi.org/10.1063/1.4773237
SEMICONDUCTORS
Influence of the surface structure on the magnetic properties of
G. Ciatto; A. Di Trolio; E. Fonda; L. Amidani; F. Boscherini; M. Thomasset; P. Alippi; A. Amore Bonapasta
Appl. Phys. Lett. 101, 252101 (2012)
https://doi.org/10.1063/1.4772473
High frequency dynamic bending response of piezoresistive GaN microcantilevers
Appl. Phys. Lett. 101, 252102 (2012)
https://doi.org/10.1063/1.4772489
Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes
Appl. Phys. Lett. 101, 252103 (2012)
https://doi.org/10.1063/1.4772549
Extend the omnidirectional electronic gap of Thue-Morse aperiodic gapped graphene superlattices
Appl. Phys. Lett. 101, 252104 (2012)
https://doi.org/10.1063/1.4772209
Local ultra-violet surface photovoltage spectroscopy of single thread dislocations in gallium nitrides by Kelvin probe force microscopy
Zhenghui Liu (刘争晖); Ke Xu (徐科); Yingmin Fan (樊英民); Gengzhao Xu (徐耿钊); Zengli Huang (黄增立); Haijian Zhong (钟海舰); Jianfeng Wang (王建峰); Hui Yang (杨辉)
Appl. Phys. Lett. 101, 252107 (2012)
https://doi.org/10.1063/1.4772538
Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond
Appl. Phys. Lett. 101, 252108 (2012)
https://doi.org/10.1063/1.4772985
Multi-finger flexible graphene field effect transistors with high bendability
Appl. Phys. Lett. 101, 252109 (2012)
https://doi.org/10.1063/1.4772541
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
L. C. Le; D. G. Zhao; D. S. Jiang; L. Li; L. L. Wu; P. Chen; Z. S. Liu; Z. C. Li; Y. M. Fan; J. J. Zhu; H. Wang; S. M. Zhang; H. Yang
Appl. Phys. Lett. 101, 252110 (2012)
https://doi.org/10.1063/1.4772548
Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy
Appl. Phys. Lett. 101, 252111 (2012)
https://doi.org/10.1063/1.4773299
MAGNETICS AND SPINTRONICS
Charge density wave excitations in stripe-type charge ordered Pr0.5Sr0.5MnO3 manganite
Appl. Phys. Lett. 101, 252401 (2012)
https://doi.org/10.1063/1.4772474
Dynamics of the vortex core in magnetic nanodisks with a ring of magnetic impurities
Appl. Phys. Lett. 101, 252402 (2012)
https://doi.org/10.1063/1.4772071
Promotion of [001]-oriented L1-FePt by rapid thermal annealing with light absorption layer
Appl. Phys. Lett. 101, 252403 (2012)
https://doi.org/10.1063/1.4772072
Temperature dependence of spin lifetime of conduction electrons in bulk germanium
Appl. Phys. Lett. 101, 252404 (2012)
https://doi.org/10.1063/1.4772500
Origin of magnetic anisotropy in ZnO/CoFe2O4 and CoO/CoFe2O4 core/shell nanoparticle systems
Elin L. Winkler; Enio Lima, Jr.; Dina Tobia; Martín E. Saleta; Horacio E. Troiani; Elisabetta Agostinelli; Dino Fiorani; Roberto D. Zysler
Appl. Phys. Lett. 101, 252405 (2012)
https://doi.org/10.1063/1.4771993
Mapping microwave field distributions via the spin Hall effect
Appl. Phys. Lett. 101, 252406 (2012)
https://doi.org/10.1063/1.4772635
Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices
Appl. Phys. Lett. 101, 252408 (2012)
https://doi.org/10.1063/1.4772546
Non-volatile spin switch for Boolean and non-Boolean logic
Appl. Phys. Lett. 101, 252411 (2012)
https://doi.org/10.1063/1.4769989
Mechanism of reversing the Neel domain walls in the Co nanostripes with transverse magnetic anisotropy
Appl. Phys. Lett. 101, 252412 (2012)
https://doi.org/10.1063/1.4772981
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
Homogeneous superconducting phase in TiN film: A complex impedance study
Appl. Phys. Lett. 101, 252601 (2012)
https://doi.org/10.1063/1.4771995
Reversible superconductivity in electrochromic indium-tin oxide films
Appl. Phys. Lett. 101, 252603 (2012)
https://doi.org/10.1063/1.4772536
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
The dominance of paramagnetic loss in microwave dielectric ceramics at cryogenic temperatures
Appl. Phys. Lett. 101, 252901 (2012)
https://doi.org/10.1063/1.4772491
Flexoelectric strain gradient detection using Ba0.64Sr0.36TiO3 for sensing
Appl. Phys. Lett. 101, 252903 (2012)
https://doi.org/10.1063/1.4772803
Polarization and strain response in Bi0.5K0.5TiO3-BiFeO3 ceramics
Appl. Phys. Lett. 101, 252904 (2012)
https://doi.org/10.1063/1.4772588
Electric field-tunable BaxSr1−xTiO3 films with high figures of merit grown by molecular beam epitaxy
Appl. Phys. Lett. 101, 252906 (2012)
https://doi.org/10.1063/1.4773034
NANOSCALE SCIENCE AND TECHNOLOGY
Strain relaxation in GaN nanopillars
W. J. Tseng (曾韋智); M. Gonzalez; L. Dillemans; K. Cheng; S. J. Jiang; P. M. Vereecken; G. Borghs; R. R. Lieten
Appl. Phys. Lett. 101, 253102 (2012)
https://doi.org/10.1063/1.4772481
Evidence for surface plasmons in a liquid crystal containing gold nanoparticles
Appl. Phys. Lett. 101, 253103 (2012)
https://doi.org/10.1063/1.4772066
Inducing extended line defects in graphene by linear adsorption of C and N atoms
Appl. Phys. Lett. 101, 253105 (2012)
https://doi.org/10.1063/1.4772212
Giant enhancement of H2S gas response by decorating n-type SnO2 nanowires with p-type NiO nanoparticles
Appl. Phys. Lett. 101, 253106 (2012)
https://doi.org/10.1063/1.4772488
Three-dimensional analysis of nanoparticles on carbon support using aberration-corrected scanning confocal electron microscopy
Ayako Hashimoto; Peng Wang; Masayuki Shimojo; Kazutaka Mitsuishi; Peter D. Nellist; Angus I. Kirkland; Masaki Takeguchi
Appl. Phys. Lett. 101, 253108 (2012)
https://doi.org/10.1063/1.4772514
Two-dimensional nanodiamond monolayers deposited by combined ultracentrifugation and electrophoresis techniques
Appl. Phys. Lett. 101, 253111 (2012)
https://doi.org/10.1063/1.4772983
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
Appl. Phys. Lett. 101, 253112 (2012)
https://doi.org/10.1063/1.4773008
ORGANIC ELECTRONICS AND PHOTONICS
Polyaniline micro-rods based heterojunction solar cell: Structural and photovoltaic properties
Appl. Phys. Lett. 101, 253301 (2012)
https://doi.org/10.1063/1.4772019
The penetration limit of poly(4-vinyl phenol) thin films for etching via holes by inkjet printing
Appl. Phys. Lett. 101, 253302 (2012)
https://doi.org/10.1063/1.4772796
Passivation of trap states in unpurified and purified C60 and the influence on organic field-effect transistor performance
Selina Olthof; Sanjeev Singh; Swagat K. Mohapatra; Stephen Barlow; Seth R. Marder; Bernard Kippelen; Antoine Kahn
Appl. Phys. Lett. 101, 253303 (2012)
https://doi.org/10.1063/1.4772551
Scanning photocurrent and photoluminescence imaging of a frozen polymer p-n junction
Appl. Phys. Lett. 101, 253305 (2012)
https://doi.org/10.1063/1.4773235
DEVICE PHYSICS
Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices
Appl. Phys. Lett. 101, 253501 (2012)
https://doi.org/10.1063/1.4767131
Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors
Sheng-Yao Huang; Ting-Chang Chang; Man-Chun Yang; Li-Wei Lin; Ming-hsin Wu; Kai-Hsiang Yang; Min-Chen Chen; Yi-Jen Chiu; Bo-Liang Yeh
Appl. Phys. Lett. 101, 253502 (2012)
https://doi.org/10.1063/1.4772485
Modelling charge transport lengths in heterojunction solar cells
Appl. Phys. Lett. 101, 253503 (2012)
https://doi.org/10.1063/1.4771981
Electroacoustic response of 1-3 piezocomposite transducers for high power applications
Appl. Phys. Lett. 101, 253504 (2012)
https://doi.org/10.1063/1.4772482
Unipolar to ambipolar conversion in graphene field-effect transistors
Appl. Phys. Lett. 101, 253505 (2012)
https://doi.org/10.1063/1.4772493
Laser-induced effects on the electronic features of graphene nanoribbons
Appl. Phys. Lett. 101, 253506 (2012)
https://doi.org/10.1063/1.4772496
Propagation and decay of low temperature plasma packets in arrays of dielectric microchannels
Appl. Phys. Lett. 101, 253508 (2012)
https://doi.org/10.1063/1.4770514
Comparative study on the atmospheric pressure plasma jets of helium and argon
Appl. Phys. Lett. 101, 253509 (2012)
https://doi.org/10.1063/1.4772639
Admittance of Au/1,4-benzenedithiol/Au single-molecule junctions
Appl. Phys. Lett. 101, 253510 (2012)
https://doi.org/10.1063/1.4772642
Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors
In Special Collection:
Negative Capacitance Field Effect Transistors
Y. G. Xiao; Z. J. Chen; M. H. Tang; Z. H. Tang; S. A. Yan; J. C. Li; X. C. Gu; Y. C. Zhou; X. P. Ouyang
Appl. Phys. Lett. 101, 253511 (2012)
https://doi.org/10.1063/1.4772982
Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes
Craig G. Moe; Gregory A. Garrett; Paul Rotella; Hongen Shen; Michael Wraback; Max Shatalov; Wenhong Sun; Jianyu Deng; Xuhong Hu; Yuri Bilenko; Jinwei Yang; Remis Gaska
Appl. Phys. Lett. 101, 253512 (2012)
https://doi.org/10.1063/1.4772506
Experimental realization of bending waveguide using anisotropic zero-index materials
Appl. Phys. Lett. 101, 253513 (2012)
https://doi.org/10.1063/1.4772552
A study of capping layers for sulfur monolayer doping on III-V junctions
J. H. Yum; H. S. Shin; R. Hill; J. Oh; H. D. Lee; Ryan M. Mushinski; Todd W. Hudnall; C. W. Bielawski; S. K. Banerjee; W. Y. Loh; Wei-E Wang; Paul Kirsch
Appl. Phys. Lett. 101, 253514 (2012)
https://doi.org/10.1063/1.4772641
Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices
G. A. Umana-Membreno; B. Klein; H. Kala; J. Antoszewski; N. Gautam; M. N. Kutty; E. Plis; S. Krishna; L. Faraone
Appl. Phys. Lett. 101, 253515 (2012)
https://doi.org/10.1063/1.4772954
Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes
Appl. Phys. Lett. 101, 253516 (2012)
https://doi.org/10.1063/1.4772984
Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure
Appl. Phys. Lett. 101, 253517 (2012)
https://doi.org/10.1063/1.4772986
Low-power, miniature 171Yb ion clock using an ultra-small vacuum package
Appl. Phys. Lett. 101, 253518 (2012)
https://doi.org/10.1063/1.4767454
Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
Appl. Phys. Lett. 101, 253519 (2012)
https://doi.org/10.1063/1.4773244
BIOPHYSICS AND BIO-INSPIRED SYSTEMS
Culturing photosynthetic bacteria through surface plasmon resonance
Appl. Phys. Lett. 101, 253701 (2012)
https://doi.org/10.1063/1.4771990
ENERGY CONVERSION AND STORAGE
Oxidation states study of nickel in solid oxide fuel cell anode using x-ray full-field spectroscopic nano-tomography
Appl. Phys. Lett. 101, 253901 (2012)
https://doi.org/10.1063/1.4772784
Measurement of contact voltage drop and resistance in organic solar cells
Appl. Phys. Lett. 101, 253902 (2012)
https://doi.org/10.1063/1.4772203
INTERDISCIPLINARY AND GENERAL PHYSICS
Probing ballistic microdrop coalescence by stroboscopic small-angle X-ray scattering
Appl. Phys. Lett. 101, 254101 (2012)
https://doi.org/10.1063/1.4772631
Nanomechanical and optical properties of highly a-axis oriented AlN films
Appl. Phys. Lett. 101, 254102 (2012)
https://doi.org/10.1063/1.4772204
COMMENTS
ERRATA
Erratum “Tunable magnetic states in hexagonal boron nitride sheets” [Appl. Phys. Lett. 101, 132405 (2012)]
Appl. Phys. Lett. 101, 259901 (2012)
https://doi.org/10.1063/1.4772479
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.