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PHOTONICS AND OPTOELECTRONICS

Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography

K. H. Li; Zetao Ma; H. W. Choi

Appl. Phys. Lett. 100, 141101 (2012) https://doi.org/10.1063/1.3698392

Abstract

View articletitled, Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography

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Optical generation of polarized photoluminescence from GaAs(100)

Zhan Hu; Sima Singha; Daniel H. Rich; Robert J. Gordon

Appl. Phys. Lett. 100, 141102 (2012) https://doi.org/10.1063/1.3698469

Abstract

View articletitled, Optical generation of polarized photoluminescence from GaAs(100)

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Phase sensitive monitoring of electron bunch form and arrival time in superconducting linear accelerators

C. Kaya; C. Schneider; A. Al-Shemmary; W. Seidel; M. Kuntzsch; J. Bhattacharyya; M. Mittendorff; P. Evtushenko; S. Winnerl; G. Staats; M. Helm; N. Stojanovic; P. Michel; M. Gensch

Appl. Phys. Lett. 100, 141103 (2012) https://doi.org/10.1063/1.3699025

Abstract

View articletitled, Phase sensitive monitoring of electron bunch form and arrival time in superconducting linear accelerators

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Transmission and temperature sensing characteristics of a selectively liquid-filled photonic-bandgap-fiber-based Sagnac interferometer

Xibao Zheng; Yan-ge Liu; Zhi Wang; Tingting Han; Chengli Wei; Jinjie Chen

Appl. Phys. Lett. 100, 141104 (2012) https://doi.org/10.1063/1.3699026

Abstract

View articletitled, Transmission and temperature sensing characteristics of a selectively liquid-filled photonic-bandgap-fiber-based Sagnac interferometer

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Lens-less edge-pumped high power microchip laser

Weipeng Kong; Takunori Taira

Appl. Phys. Lett. 100, 141105 (2012) https://doi.org/10.1063/1.3699225

Abstract

View articletitled, Lens-less edge-pumped high power microchip laser

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Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

Taiping Lu; Shuti Li; Chao Liu; Kang Zhang; Yiqin Xu; Jinhui Tong; Lejuan Wu; Hailong Wang; Xiaodong Yang; Yian Yin; Guowei Xiao; Yugang Zhou

Appl. Phys. Lett. 100, 141106 (2012) https://doi.org/10.1063/1.3700722

Abstract

View articletitled, Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

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Bistability in silicon microring resonator based on strain induced by a piezoelectric lead zirconate titanate thin film

Y. Sebbag; I. Goykhman; B. Desiatov; T. Nachmias; O. Yoshaei; M. Kabla; S. E. Meltzer; U. Levy

Appl. Phys. Lett. 100, 141107 (2012) https://doi.org/10.1063/1.3701587

Abstract

View articletitled, Bistability in silicon microring resonator based on strain induced by a piezoelectric lead zirconate titanate thin film

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The effect of viewing angle on the spectral behavior of a Gd plasma source near 6.7 nm

Colm O’Gorman; Takamitsu Otsuka; Noboru Yugami; Weihua Jiang; Akira Endo; Bowen Li; Thomas Cummins; Padraig Dunne; Emma Sokell; Gerry O’Sullivan; Takeshi Higashiguchi

Appl. Phys. Lett. 100, 141108 (2012) https://doi.org/10.1063/1.3701593

Abstract

View articletitled, The effect of viewing angle on the spectral behavior of a Gd plasma source near 6.7 nm

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Ultrafast excited state dynamics and dispersion studies of nonlinear optical properties in dinaphthoporphycenes

Debasis Swain; P. T. Anusha; T. Shuvan Prashant; Surya P. Tewari; Tridib Sarma; Pradeepta K. Panda; S. Venugopal Rao

Appl. Phys. Lett. 100, 141109 (2012) https://doi.org/10.1063/1.3701274

Abstract

View articletitled, Ultrafast excited state dynamics and dispersion studies of nonlinear optical properties in dinaphthoporphycenes

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SURFACES AND INTERFACES

The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Xinbo Yang; K. Fujiwara; N. V. Abrosimov; R. Gotoh; J. Nozawa; H. Koizumi; A. Kwasniewski; S. Uda

Appl. Phys. Lett. 100, 141601 (2012) https://doi.org/10.1063/1.3698336

Abstract

View articletitled, The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

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Interface barriers at the interfaces of polar GaAs(111) faces with Al₂O₃

H. Y. Chou; E. O’Connor; P. K. Hurley; V. V. Afanas’ev; M. Houssa; A. Stesmans; P. D. Ye; S. B. Newcomb

Appl. Phys. Lett. 100, 141602 (2012) https://doi.org/10.1063/1.3698461

Abstract

View articletitled, Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

Supplementary Material

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Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

C. W. Petz; D. Yang; J. Levy; J. A. Floro

Appl. Phys. Lett. 100, 141603 (2012) https://doi.org/10.1063/1.3699223

Abstract

View articletitled, Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

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Highly ionized physical vapor deposition plasma source working at very low pressure

V. Stranak; A.-P. Herrendorf; S. Drache; M. Cada; Z. Hubicka; M. Tichy; R. Hippler

Appl. Phys. Lett. 100, 141604 (2012) https://doi.org/10.1063/1.3699229

Abstract

View articletitled, Highly ionized physical vapor deposition plasma source working at very low pressure

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Smallest separation of nanorods from physical vapor deposition

L. G. Zhou; Hanchen Huang

Appl. Phys. Lett. 100, 141605 (2012) https://doi.org/10.1063/1.3700740

Abstract

View articletitled, Smallest separation of nanorods from physical vapor deposition

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Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

S. McDonnell; H. Dong; J. M. Hawkins; B. Brennan; M. Milojevic; F. S. Aguirre-Tostado; D. M. Zhernokletov; C. L. Hinkle; J. Kim; R. M. Wallace

Appl. Phys. Lett. 100, 141606 (2012) https://doi.org/10.1063/1.3700863

Abstract

View articletitled, Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

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Surface area enhancement of microcantilevers by femto-second laser irradiation

A. Kumar; S. Rajauria; H. Huo; O. Ozsun; K. Rykaczewski; J. Kumar; K. L. Ekinci

Appl. Phys. Lett. 100, 141607 (2012) https://doi.org/10.1063/1.3701163

Abstract

View articletitled, Surface area enhancement of microcantilevers by femto-second laser irradiation

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Effects of polarization azimuth in dynamics of electrically assisted light-induced gliding of nematic liquid-crystal easy axis

A. V. Dubtsov; D. V. Shmeliova; S. V. Pasechnik; Alexei D. Kiselev; V. G. Chigrinov

Appl. Phys. Lett. 100, 141608 (2012) https://doi.org/10.1063/1.3701781

Abstract

View articletitled, Effects of polarization azimuth in dynamics of electrically assisted light-induced gliding of nematic liquid-crystal easy axis

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Modification of the surface-state occupancy on noble metal films with stacking fault arrays

Puneet Mishra; Takashi Uchihashi; Tomonobu Nakayama

Appl. Phys. Lett. 100, 141609 (2012) https://doi.org/10.1063/1.3701777

Abstract

View articletitled, Modification of the surface-state occupancy on noble metal films with stacking fault arrays

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STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS

Design of ductile bulk metallic glasses by adding “soft” atoms

N. Zheng; R. T. Qu; S. Pauly; M. Calin; T. Gemming; Z. F. Zhang; J. Eckert

Appl. Phys. Lett. 100, 141901 (2012) https://doi.org/10.1063/1.3700721

Abstract

View articletitled, Design of ductile bulk metallic glasses by adding “soft” atoms

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Surface morphological stabilization of stressed crystalline solids by simultaneous action of applied electric and thermal fields

Dwaipayan Dasgupta; Georgios I. Sfyris; M. Rauf Gungor; Dimitrios Maroudas

Appl. Phys. Lett. 100, 141902 (2012) https://doi.org/10.1063/1.3698360

Abstract

View articletitled, Surface morphological stabilization of stressed crystalline solids by simultaneous action of applied electric and thermal fields

Supplementary Material

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Origin of size-dependent photoluminescence decay dynamics in colloidal γ-Ga₂O₃ nanocrystals

Manu Hegde; Ting Wang; Zoran L. Miskovic; Pavle V. Radovanovic

Appl. Phys. Lett. 100, 141903 (2012) https://doi.org/10.1063/1.3698390

Abstract

View articletitled, Origin of size-dependent photoluminescence decay dynamics in colloidal γ-Ga2O3 nanocrystals

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Notable internal thermal effect on the yielding of metallic glasses

W. D. Liu; K. X. Liu

Appl. Phys. Lett. 100, 141904 (2012) https://doi.org/10.1063/1.3700923

Abstract

View articletitled, Notable internal thermal effect on the yielding of metallic glasses

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Above-room-temperature photoluminescence from a strain-compensated Ge/Si_0.15Ge_0.85 multiple-quantum-well structure

P. H. Wu; D. Dumcenco; Y. S. Huang; H. P. Hsu; C. H. Lai; T. Y. Lin; D. Chrastina; G. Isella; E. Gatti; K. K. Tiong

Appl. Phys. Lett. 100, 141905 (2012) https://doi.org/10.1063/1.3700804

Abstract

View articletitled, Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure

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Nano-precipitates made of atomic pillars revealed by single atom detection in a Mg-Nd alloy

W. Lefebvre; V. Kopp; C. Pareige

Appl. Phys. Lett. 100, 141906 (2012) https://doi.org/10.1063/1.3701272

Abstract

View articletitled, Nano-precipitates made of atomic pillars revealed by single atom detection in a Mg-Nd alloy

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Probing the electrode-polymer interface in conjugated polymer devices with surface-enhanced Raman scattering

Dongbo Li; Nicholas J. Borys; John M. Lupton

Appl. Phys. Lett. 100, 141907 (2012) https://doi.org/10.1063/1.3701278

Abstract

View articletitled, Probing the electrode-polymer interface in conjugated polymer devices with surface-enhanced Raman scattering

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Structural and optical characterization of Si_xGe_1−x₋_ySn_y alloys grown by molecular beam epitaxy

Hai Lin; Robert Chen; Weisheng Lu; Yijie Huo; Theodore I. Kamins; James S. Harris

Appl. Phys. Lett. 100, 141908 (2012) https://doi.org/10.1063/1.3701732

Abstract

View articletitled, Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy

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SEMICONDUCTORS

Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions

N. H. Thoan; M. Jivanescu; B. J. O’Sullivan; L. Pantisano; I. Gordon; V. V. Afanas’ev; A. Stesmans

Appl. Phys. Lett. 100, 142101 (2012) https://doi.org/10.1063/1.3698386

Abstract

View articletitled, Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions

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Semiconducting-like filament formation in TiN/HfO₂/TiN resistive switching random access memories

F. De Stefano; M. Houssa; J. A. Kittl; M. Jurczak; V. V. Afanas’ev; A. Stesmans

Appl. Phys. Lett. 100, 142102 (2012) https://doi.org/10.1063/1.3696672

Abstract

View articletitled, Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories

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Semiconducting behavior of niobium-doped titanium oxide in the amorphous state

Kyung-Chul Ok; Joseph Park; Ju Ho Lee; Byung Du Ahn; Je Hun Lee; Kwun-Bum Chung; Jin-Seong Park

Appl. Phys. Lett. 100, 142103 (2012) https://doi.org/10.1063/1.3698389

Abstract

View articletitled, Semiconducting behavior of niobium-doped titanium oxide in the amorphous state

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Fluorinated copper-phthalocyanine/cobalt-phthalocyaine organic heterojunctions: Charge transport and Kelvin probe studies

A. K. Debnath; Arvind Kumar; S. Samanta; R. Prasad; A. Singh; A. K. Chauhan; P. Veerender; S. Singh; S. Basu; D. K. Aswal; S. K. Gupta

Appl. Phys. Lett. 100, 142104 (2012) https://doi.org/10.1063/1.3699272

Abstract

View articletitled, Fluorinated copper-phthalocyanine/cobalt-phthalocyaine organic heterojunctions: Charge transport and Kelvin probe studies

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Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride

Shulong Wang; Hongxia Liu; Bo Gao; Huimin Cai

Appl. Phys. Lett. 100, 142105 (2012) https://doi.org/10.1063/1.3700720

Abstract

View articletitled, Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride

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Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments

Wootae Lee; Jubong Park; Seonghyun Kim; Jiyong Woo; Jungho Shin; Daeseok Lee; Euijun Cha; Hyunsang Hwang

Appl. Phys. Lett. 100, 142106 (2012) https://doi.org/10.1063/1.3700730

Abstract

View articletitled, Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments

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Nanocrystal-based Ohmic contacts on n and p-type germanium

V. Pavan Kishore; Prashanth Paramahans; Sunny Sadana; Udayan Ganguly; Saurabh Lodha

Appl. Phys. Lett. 100, 142107 (2012) https://doi.org/10.1063/1.3700965

Abstract

View articletitled, Nanocrystal-based Ohmic contacts on n and p-type germanium

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Free carrier accumulation at cubic AlGaN/GaN heterojunctions

Q. Y. Wei; T. Li; J. Y. Huang; F. A. Ponce; E. Tschumak; A. Zado; D. J. As

Appl. Phys. Lett. 100, 142108 (2012) https://doi.org/10.1063/1.3700968

Abstract

View articletitled, Free carrier accumulation at cubic AlGaN/GaN heterojunctions

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Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature

J. L. Yu; Y. H. Chen; C. Y. Jiang; Y. Liu; H. Ma; L. P. Zhu

Appl. Phys. Lett. 100, 142109 (2012) https://doi.org/10.1063/1.3701281

Abstract

View articletitled, Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature

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Role of nitrogen vacancies in the luminescence of Mg-doped GaN

Qimin Yan; Anderson Janotti; Matthias Scheffler; Chris G. Van de Walle

Appl. Phys. Lett. 100, 142110 (2012) https://doi.org/10.1063/1.3699009

Abstract

View articletitled, Role of nitrogen vacancies in the luminescence of Mg-doped GaN

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Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation

S. M. Bishop; H. Bakhru; J. O. Capulong; N. C. Cady

Appl. Phys. Lett. 100, 142111 (2012) https://doi.org/10.1063/1.3701154

Abstract

View articletitled, Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation

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A model for the bandgap energy of the N-rich GaNAs(0 ≤ x ≤ 0.07)

Chuan-Zhen Zhao; Na-Na Li; Tong Wei; Chun-Xiao Tang; Ke-Qing Lu

Appl. Phys. Lett. 100, 142112 (2012) https://doi.org/10.1063/1.3701284

Abstract

View articletitled, A model for the bandgap energy of the N-rich GaNAs(0 ≤ x ≤ 0.07)

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Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

P. Kordoš; R. Kúdela; R. Stoklas; K. Čičo; M. Mikulics; D. Gregušová; J. Novák

Appl. Phys. Lett. 100, 142113 (2012) https://doi.org/10.1063/1.3701584

Abstract

View articletitled, Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

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Amorphization and amorphous stability of Bi₂Te₃ chalcogenide films

C. Ju; X. M. Cheng; X. S. Miao

Appl. Phys. Lett. 100, 142114 (2012) https://doi.org/10.1063/1.3701275

Abstract

View articletitled, Amorphization and amorphous stability of Bi2Te3 chalcogenide films

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Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon

S. D. Carnevale; C. Marginean; P. J. Phillips; T. F. Kent; A. T. M. G. Sarwar; M. J. Mills; R. C. Myers

Appl. Phys. Lett. 100, 142115 (2012) https://doi.org/10.1063/1.3701586

Abstract

View articletitled, Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon

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GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

E. P. Smakman; J. K. Garleff; R. J. Young; M. Hayne; P. Rambabu; P. M. Koenraad

Appl. Phys. Lett. 100, 142116 (2012) https://doi.org/10.1063/1.3701614

Abstract

View articletitled, GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

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MAGNETICS AND SPINTRONICS

Magneto-optical magnetometry of individual 30 nm cobalt nanowires grown by electron beam induced deposition

E. Nikulina; O. Idigoras; P. Vavassori; A. Chuvilin; A. Berger

Appl. Phys. Lett. 100, 142401 (2012) https://doi.org/10.1063/1.3701153

Abstract

View articletitled, Magneto-optical magnetometry of individual 30 nm cobalt nanowires grown by electron beam induced deposition

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Low frequency noise in La_0.7Sr_0.3MnO₃ based magnetic tunnel junctions

R. Guerrero; A. Solignac; C. Fermon; M. Pannetier-Lecoeur; Ph. Lecoeur; R. Fernández-Pacheco

Appl. Phys. Lett. 100, 142402 (2012) https://doi.org/10.1063/1.3698393

Abstract

View articletitled, Low frequency noise in La0.7Sr0.3MnO3 based magnetic tunnel junctions

Supplementary Material

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Enhancement of carrier-mediated ferromagnetism in Zr/Fe-codoped In₂O₃ films

H. Kim; M. Osofsky; R. C. Y. Auyeung; A. Piqué

Appl. Phys. Lett. 100, 142403 (2012) https://doi.org/10.1063/1.3700864

Abstract

View articletitled, Enhancement of carrier-mediated ferromagnetism in Zr/Fe-codoped In2O3 films

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Pressure-induced ferromagnetism in open structure alkali metals from first principles

Shengjie Dong; Hui Zhao

Appl. Phys. Lett. 100, 142404 (2012) https://doi.org/10.1063/1.3701134

Abstract

View articletitled, Pressure-induced ferromagnetism in open structure alkali metals from first principles

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Ab initio magnetocrystalline anisotropy at nanoscale: The case of FePt

Roman V. Chepulskii; W. H. Butler

Appl. Phys. Lett. 100, 142405 (2012) https://doi.org/10.1063/1.3700746

Abstract

View articletitled, Ab initio magnetocrystalline anisotropy at nanoscale: The case of FePt

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Microstructure and magnetization reversal of L1-FePt/[Co/Pt]_N exchange coupled composite films

H. H. Guo; J. L. Liao; B. Ma; Z. Z. Zhang; Q. Y. Jin; H. Wang; J. P. Wang

Appl. Phys. Lett. 100, 142406 (2012) https://doi.org/10.1063/1.3700865

Abstract

View articletitled, Microstructure and magnetization reversal of L1-FePt/[Co/Pt]N exchange coupled composite films

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Tunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodes

J. Y. Chen; J. F. Feng; J. M. D. Coey

Appl. Phys. Lett. 100, 142407 (2012) https://doi.org/10.1063/1.3701277

Abstract

View articletitled, Tunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodes

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Theoretical investigation of organic magnetoresistance based on hyperfine interaction

X. X. Li; X. F. Dong; J. Lei; S. J. Xie; A. Saxena

Appl. Phys. Lett. 100, 142408 (2012) https://doi.org/10.1063/1.3701167

Abstract

View articletitled, Theoretical investigation of organic magnetoresistance based on hyperfine interaction

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Precession frequency and fast switching dependence on the in-plane and out-of-plane dual spin-torque polarizers

Hong Zhang; Zhiwei Hou; Jianwei Zhang; Zongzhi Zhang; Yaowen Liu

Appl. Phys. Lett. 100, 142409 (2012) https://doi.org/10.1063/1.3700724

Abstract

View articletitled, Precession frequency and fast switching dependence on the in-plane and out-of-plane dual spin-torque polarizers

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Enhancement of perpendicular magnetic anisotropy through reduction of Co-Pt interdiffusion in (Co/Pt) multilayers

S. Bandiera; R. C. Sousa; B. Rodmacq; B. Dieny

Appl. Phys. Lett. 100, 142410 (2012) https://doi.org/10.1063/1.3701585

Abstract

View articletitled, Enhancement of perpendicular magnetic anisotropy through reduction of Co-Pt interdiffusion in (Co/Pt) multilayers

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SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS

1/f noise of Josephson-junction-embedded microwave resonators at single photon energies and millikelvin temperatures

K. W. Murch; S. J. Weber; E. M. Levenson-Falk; R. Vijay; I. Siddiqi

Appl. Phys. Lett. 100, 142601 (2012) https://doi.org/10.1063/1.3700964

Abstract

View articletitled, 1/f noise of Josephson-junction-embedded microwave resonators at single photon energies and millikelvin temperatures

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DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

High-temperature phonon spectra of multiferroic BiFeO₃ from inelastic neutron spectroscopy

Mohamed Zbiri; Helmut Schober; Narayani Choudhury; Ranjan Mittal; Samrath L. Chaplot; Sadequa J. Patwe; Srungarpu N. Achary; Avesh K. Tyagi

Appl. Phys. Lett. 100, 142901 (2012) https://doi.org/10.1063/1.3700745

Abstract

View articletitled, High-temperature phonon spectra of multiferroic BiFeO3 from inelastic neutron spectroscopy

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Surface polar states and pyroelectricity in ferroelastics induced by flexo-roto field

A. N. Morozovska; E. A. Eliseev; S. V. Kalinin; Long Qing Chen; Venkatraman Gopalan

Appl. Phys. Lett. 100, 142902 (2012) https://doi.org/10.1063/1.3701152

Abstract

View articletitled, Surface polar states and pyroelectricity in ferroelastics induced by flexo-roto field

Supplementary Material

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NANOSCALE SCIENCE AND TECHNOLOGY

Raman sensitivity to crystal structure in InAs nanowires

Jaya Kumar Panda; Anushree Roy; Achintya Singha; Mauro Gemmi; Daniele Ercolani; Vittorio Pellegrini; Lucia Sorba

Appl. Phys. Lett. 100, 143101 (2012) https://doi.org/10.1063/1.3698115

Abstract

View articletitled, Raman sensitivity to crystal structure in InAs nanowires

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Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes

M. A. Ebrish; H. Shao; S. J. Koester

Appl. Phys. Lett. 100, 143102 (2012) https://doi.org/10.1063/1.3698394

Abstract

View articletitled, Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes

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Readout of carbon nanotube vibrations based on spin-phonon coupling

C. Ohm; C. Stampfer; J. Splettstoesser; M. R. Wegewijs

Appl. Phys. Lett. 100, 143103 (2012) https://doi.org/10.1063/1.3698395

Abstract

View articletitled, Readout of carbon nanotube vibrations based on spin-phonon coupling

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Quantized charge pumping through a carbon nanotube double quantum dot

S. J. Chorley; J. Frake; C. G. Smith; G. A. C. Jones; M. R. Buitelaar

Appl. Phys. Lett. 100, 143104 (2012) https://doi.org/10.1063/1.3700967

Abstract

View articletitled, Quantized charge pumping through a carbon nanotube double quantum dot

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Temperature dependence of dynamic nuclear polarization and its effect on electron spin relaxation and dephasing in InAs/GaAs quantum dots

J. Beyer; Y. Puttisong; I. A. Buyanova; S. Suraprapapich; C. W. Tu; W. M. Chen

Appl. Phys. Lett. 100, 143105 (2012) https://doi.org/10.1063/1.3701273

Abstract

View articletitled, Temperature dependence of dynamic nuclear polarization and its effect on electron spin relaxation and dephasing in InAs/GaAs quantum dots

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Freestanding nanostructures for three-dimensional superconducting nanodevices

Ajuan Cui; Wuxia Li; Qiang Luo; Zhe Liu; Changzhi Gu

Appl. Phys. Lett. 100, 143106 (2012) https://doi.org/10.1063/1.3701283

Abstract

View articletitled, Freestanding nanostructures for three-dimensional superconducting nanodevices

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Automated markerless full field hard x-ray microscopic tomography at sub-50 nm 3-dimension spatial resolution

Jun Wang; Yu-chen Karen Chen; Qingxi Yuan; Andrei Tkachuk; Can Erdonmez; Benjamin Hornberger; Michael Feser

Appl. Phys. Lett. 100, 143107 (2012) https://doi.org/10.1063/1.3701579

Abstract

View articletitled, Automated markerless full field hard x-ray microscopic tomography at sub-50 nm 3-dimension spatial resolution

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Proposal for tunnel-field-effect-transistor as ultra-sensitive and label-free biosensors

Deblina Sarkar; Kaustav Banerjee

Appl. Phys. Lett. 100, 143108 (2012) https://doi.org/10.1063/1.3698093

Abstract

View articletitled, Proposal for tunnel-field-effect-transistor as ultra-sensitive and label-free biosensors

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Metallic nanomesh electrodes with controllable optical properties for organic solar cells

Jinfeng Zhu; Xiaodan Zhu; Ryan Hoekstra; Lu Li; Faxian Xiu; Mei Xue; Baoqing Zeng; Kang L. Wang

Appl. Phys. Lett. 100, 143109 (2012) https://doi.org/10.1063/1.3701582

Abstract

View articletitled, Metallic nanomesh electrodes with controllable optical properties for organic solar cells

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Few electron double quantum dot in an isotopically purified ²⁸Si quantum well

A. Wild; J. Kierig; J. Sailer; J. W. Ager, III; E. E. Haller; G. Abstreiter; S. Ludwig; D. Bougeard

Appl. Phys. Lett. 100, 143110 (2012) https://doi.org/10.1063/1.3701588

Abstract

View articletitled, Few electron double quantum dot in an isotopically purified 28Si quantum well

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ORGANIC ELECTRONICS AND PHOTONICS

Dependence of charge carrier injection on the interface energy barrier in short-channel polymeric field effect transistors

S. Alborghetti; J. M. D. Coey; P. Stamenov

Appl. Phys. Lett. 100, 143301 (2012) https://doi.org/10.1063/1.3701271

Abstract

View articletitled, Dependence of charge carrier injection on the interface energy barrier in short-channel polymeric field effect transistors

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Double layer capacitance measured by organic field effect transistor operated in water

T. Cramer; A. Kyndiah; M. Murgia; F. Leonardi; S. Casalini; F. Biscarini

Appl. Phys. Lett. 100, 143302 (2012) https://doi.org/10.1063/1.3699218

Abstract

View articletitled, Double layer capacitance measured by organic field effect transistor operated in water

Supplementary Material

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Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)

P. Pingel; R. Schwarzl; D. Neher

Appl. Phys. Lett. 100, 143303 (2012) https://doi.org/10.1063/1.3701729

Abstract

View articletitled, Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)

Supplementary Material

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DEVICE PHYSICS

Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

Yu-Chung Lien; Jia-Min Shieh; Wen-Hsien Huang; Cheng-Hui Tu; Chieh Wang; Chang-Hong Shen; Bau-Tong Dai; Ci-Ling Pan; Chenming Hu; Fu-Liang Yang

Appl. Phys. Lett. 100, 143501 (2012) https://doi.org/10.1063/1.3700729

Abstract

View articletitled, Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

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Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer

Thanh Thuy Trinh; Van Duy Nguyen; Hong Hanh Nguyen; Jayapal Raja; Juyeon Jang; Kyungsoo Jang; Kyunghyun Baek; Vinh Ai Dao; Junsin Yi

Appl. Phys. Lett. 100, 143502 (2012) https://doi.org/10.1063/1.3699221

Abstract

View articletitled, Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer

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Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

Ze Yuan; Aneesh Nainani; Brian R. Bennett; J. Brad Boos; Mario G. Ancona; Krishna C. Saraswat

Appl. Phys. Lett. 100, 143503 (2012) https://doi.org/10.1063/1.3699226

Abstract

View articletitled, Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

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Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO₂ films

Myung Soo Lee; Sungho Choi; Chee-Hong An; Hyoungsub Kim

Appl. Phys. Lett. 100, 143504 (2012) https://doi.org/10.1063/1.3700728

Abstract

View articletitled, Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films

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Nanosecond threshold switching of GeTe₆ cells and their potential as selector devices

M. Anbarasu; Martin Wimmer; Gunnar Bruns; Martin Salinga; Matthias Wuttig

Appl. Phys. Lett. 100, 143505 (2012) https://doi.org/10.1063/1.3700743

Abstract

View articletitled, Nanosecond threshold switching of GeTe6 cells and their potential as selector devices

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Effect of TaO_x thickness on the resistive switching of Ta/Pr_0.7Ca_0.3MnO₃/Pt films

Ziyu Liu; Peijian Zhang; Yang Meng; Huanfang Tian; Jianqi Li; Xinyu Pan; Xuejin Liang; Dongmin Chen; Hongwu Zhao

Appl. Phys. Lett. 100, 143506 (2012) https://doi.org/10.1063/1.3700806

Abstract

View articletitled, Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films

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Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

P. Marko; A. Alexewicz; O. Hilt; G. Meneghesso; E. Zanoni; J. Würfl; G. Strasser; D. Pogany

Appl. Phys. Lett. 100, 143507 (2012) https://doi.org/10.1063/1.3701164

Abstract

View articletitled, Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

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In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor

Nobuyuki Ikarashi; Hiroshi Takeda; Koichi Yako; Masami Hane

Appl. Phys. Lett. 100, 143508 (2012) https://doi.org/10.1063/1.3700723

Abstract

View articletitled, In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor

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Enhancement-mode nanowire (nanobelt) field-effect-transistors with Schottky-contact source and drain electrodes

Bin Yu; Yu Ye; Peicai Wu; Yu Dai; Hui Zhang; Lun Dai

Appl. Phys. Lett. 100, 143509 (2012) https://doi.org/10.1063/1.3701276

Abstract

View articletitled, Enhancement-mode nanowire (nanobelt) field-effect-transistors with Schottky-contact source and drain electrodes

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Powerful surface-wave oscillators with two-dimensional periodic structures

N. S. Ginzburg; A. M. Malkin; A. S. Sergeev; V. Yu. Zaslavsky

Appl. Phys. Lett. 100, 143510 (2012) https://doi.org/10.1063/1.3701580

Abstract

View articletitled, Powerful surface-wave oscillators with two-dimensional periodic structures

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BIOPHYSICS AND BIO-INSPIRED SYSTEMS

A numerical analysis of multicellular environment for modeling tissue electroporation

M. Essone Mezeme; G. Pucihar; M. Pavlin; C. Brosseau; D. Miklavčič

Appl. Phys. Lett. 100, 143701 (2012) https://doi.org/10.1063/1.3700727

Abstract

View articletitled, A numerical analysis of multicellular environment for modeling tissue electroporation

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Vibrational frequencies of anti-diabetic drug studied by terahertz time-domain spectroscopy

S. Q. Du; L. Xie; L. Chen; Y. Peng; Y. M. Zhu; H. Li; P. Dong; J. T. Wang

Appl. Phys. Lett. 100, 143702 (2012) https://doi.org/10.1063/1.3700808

Abstract

View articletitled, Vibrational frequencies of anti-diabetic drug studied by terahertz time-domain spectroscopy

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Physics of ultra-high bioproductivity in algal photobioreactors

Efrat Greenwald; Jeffrey M. Gordon; Yair Zarmi

Appl. Phys. Lett. 100, 143703 (2012) https://doi.org/10.1063/1.3701168

Abstract

View articletitled, Physics of ultra-high bioproductivity in algal photobioreactors

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ENERGY CONVERSION AND STORAGE

Interface engineering for the passivation of c-Si with O₃-based atomic layer deposited AlO_x for solar cell application

Hyunju Lee; Tomihisa Tachibana; Norihiro Ikeno; Hiroki Hashiguchi; Koji Arafune; Haruhiko Yoshida; Shin-ichi Satoh; Toyohiro Chikyow; Atsushi Ogura

Appl. Phys. Lett. 100, 143901 (2012) https://doi.org/10.1063/1.3701280

Abstract

View articletitled, Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application

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INTERDISCIPLINARY AND GENERAL PHYSICS

Production of high-density high-temperature plasma by collapsing small solid-density plasma shell with two ultra-intense laser pulses

H. Xu (徐涵); Wei Yu (余玮); M. Y. Yu (郁明阳); A. Y. Wong (黄燿煇); Z. M. Sheng (盛政明); M. Murakami (村上匡且); J. Zhang (张杰)

Appl. Phys. Lett. 100, 144101 (2012) https://doi.org/10.1063/1.3697983

Abstract

View articletitled, Production of high-density high-temperature plasma by collapsing small solid-density plasma shell with two ultra-intense laser pulses

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All-optical monitoring of acoustic waves guided by confined micro-fluidic layers

N. Chigarev; V. Tournat; V. Gusev

Appl. Phys. Lett. 100, 144102 (2012) https://doi.org/10.1063/1.3701576

Abstract

View articletitled, All-optical monitoring of acoustic waves guided by confined micro-fluidic layers

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Omnidirectional broadband acoustic absorber based on metamaterials

Alfonso Climente; Daniel Torrent; José Sánchez-Dehesa

Appl. Phys. Lett. 100, 144103 (2012) https://doi.org/10.1063/1.3701611

Abstract

View articletitled, Omnidirectional broadband acoustic absorber based on metamaterials

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ERRATA

Erratum: “Flow-enhanced transient response in whispering gallery mode biosensors” [Appl. Phys. Lett. 99, 253705 (2011)]

Jason M. Gamba; Richard C. Flagan

Appl. Phys. Lett. 100, 149901 (2012) https://doi.org/10.1063/1.3701137

Extract

View articletitled, Erratum: “Flow-enhanced transient response in whispering gallery mode biosensors” [Appl. Phys. Lett. 99, 253705 (2011)]

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Issues

PHOTONICS AND OPTOELECTRONICS

SURFACES AND INTERFACES

STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS

SEMICONDUCTORS

MAGNETICS AND SPINTRONICS

SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS

DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

NANOSCALE SCIENCE AND TECHNOLOGY

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

BIOPHYSICS AND BIO-INSPIRED SYSTEMS

ENERGY CONVERSION AND STORAGE

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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