In this Erratum, we correct one typographical error in the paper as follows.1
On page 193504-2, left-hand column, 1st paragraph, line 20, the expression. (b = 132π2m*q2ns/8h2ɛs). should be corrected as (b3 = 33π2m*q2ns/2h2ɛs) (Ref. 2). Here, m* is the conduction-band electron effective mass, q is the electron charge, ns is the 2DEG sheet density, h is the Planck’s constant, and ɛs is the dielectric constant.
REFERENCES
1.
S.
Ganguly
, J.
Verma
, G.
Li
, T.
Zimmermann
, H.
Xing
, and D.
Jena
, Appl. Phys. Lett.
99
, 193504
(2011
).2.
J.
Davies
, Physics of Low-Dimensional Semiconductors
(Cambridge University Press
, New York
, 1998
), p. 348
.© 2011 American Institute of Physics.
2011
American Institute of Physics
