Publisher’s Note: “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

Iglesias, V.; Lanza, M.; Zhang, K.; Bayerl, A.; Porti, M.; Nafría, M.; Aymerich, X.; Benstetter, G.; Shen, Z. Y.; Bersuker, G.

doi:10.1063/1.3666227

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Correction| December 06 2011

Publisher’s Note: “Degradation of polycrystalline HfO₂-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

V. Iglesias;

V. Iglesias

1Dept. Enginyeria Electro`nica,

Universitat Auto`noma de Barcelona

, Edifici Q, 08193 Bellaterra,

Spain

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M. Lanza;

M. Lanza ^a)

1Dept. Enginyeria Electro`nica,

Universitat Auto`noma de Barcelona

, Edifici Q, 08193 Bellaterra,

Spain

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K. Zhang;

K. Zhang

2Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics,

Peking University

, Beijing 100871,

People’s Republic of China

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A. Bayerl;

A. Bayerl

1Dept. Enginyeria Electro`nica,

Universitat Auto`noma de Barcelona

, Edifici Q, 08193 Bellaterra,

Spain

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M. Porti;

M. Porti

1Dept. Enginyeria Electro`nica,

Universitat Auto`noma de Barcelona

, Edifici Q, 08193 Bellaterra,

Spain

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M. Nafría;

M. Nafría

1Dept. Enginyeria Electro`nica,

Universitat Auto`noma de Barcelona

, Edifici Q, 08193 Bellaterra,

Spain

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X. Aymerich;

X. Aymerich

1Dept. Enginyeria Electro`nica,

Universitat Auto`noma de Barcelona

, Edifici Q, 08193 Bellaterra,

Spain

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G. Benstetter;

G. Benstetter

3Electrical Engineering Department,

University of Applied Sciences Deggendorf

, Deggendorf 94469,

Germany

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Z. Y. Shen;

Z. Y. Shen ^a)

2Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics,

Peking University

, Beijing 100871,

People’s Republic of China

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G. Bersuker

4

SEMATECH

, Austin, Texas 78741,

USA

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Author & Article Information

^a)

Authors to whom correspondence should be addressed. Electronic addresses: mario.lanza@uab.cat (Tel.: +34935868463, FAX: +34935812600) and zyshen@pku.edu.cn (Tel.: +861062762444, FAX: +861062759444).

Appl. Phys. Lett. 99, 239901 (2011)

https://doi.org/10.1063/1.3666227

This article was originally published online on 9 September 2011 with a typographical error in G. Benstetter’s name.

The author’s name was correct as it appeared in the printed version of the article. All online versions of the article were corrected on 16 September 2011.

View Original Article

2011

American Institute of Physics

Publisher’s Note: “Degradation of polycrystalline HfO₂-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

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Publisher’s Note: “Degradation of polycrystalline HfO₂-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]