The figure number for Figs. 3(d) and 3(e) is labeled incorrectly on page 3 in the original article.1 The correct figure number is shown in the sentence below.

Moreover, a closer look at the GaN/AlN interface and the AlN/SiC interface, as shown in Figs. 3(d) and 3(e), respectively, reveals that the lattice mismatch between GaN and SiC can be well accommodated with the periodic misfits at the GaN/AlN interface, given that a part of the strain is released inevitably through the generation of threading dislocations.

1.
J.-T.
Chen
,
J.
Bergsten
,
J.
Lu
,
E.
Janzen
,
M.
Thorsell
,
L.
Hultman
,
N.
Rorsman
, and
O.
Kordina
, “
A GaN–SiC hybrid material for high-frequency and power electronics
,”
Appl. Phys. Lett.
113
,
041605
(
2018
).