Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Sawicka, M.; Muziol, G.; Turski, H.; Grzanka, S.; Grzanka, E.; Smalc-Koziorowska, J.; Weyher, J. L.; Chèze, C.; Albrecht, M.; Kucharski, R.; Perlin, P.; Skierbiszewski, C.

doi:10.1063/1.4879639

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Correction| May 29 2014

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (20 $\bar{2}$ 1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

M. Sawicka;

M. Sawicka ^a)

1

Institute of High Pressure Physics

, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,

Poland

2

TopGaN Sp. z o.o.

, Sokolowska 29/37, 01-142 Warsaw,

Poland

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G. Muziol;

G. Muziol

1

Institute of High Pressure Physics

, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,

Poland

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H. Turski;

H. Turski

1

Institute of High Pressure Physics

, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,

Poland

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S. Grzanka;

S. Grzanka

1

Institute of High Pressure Physics

, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,

Poland

2

TopGaN Sp. z o.o.

, Sokolowska 29/37, 01-142 Warsaw,

Poland

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E. Grzanka;

E. Grzanka

1

Institute of High Pressure Physics

, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,

Poland

2

TopGaN Sp. z o.o.

, Sokolowska 29/37, 01-142 Warsaw,

Poland

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J. Smalc-Koziorowska;

J. Smalc-Koziorowska

1

Institute of High Pressure Physics

, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,

Poland

2

TopGaN Sp. z o.o.

, Sokolowska 29/37, 01-142 Warsaw,

Poland

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J. L. Weyher;

J. L. Weyher

1

Institute of High Pressure Physics

, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,

Poland

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C. Chèze;

C. Chèze

2

TopGaN Sp. z o.o.

, Sokolowska 29/37, 01-142 Warsaw,

Poland

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M. Albrecht;

M. Albrecht

3

Leibniz Institute of Crystal Growth

, Max-Born Strasse 2, Berlin 12489,

Germany

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R. Kucharski;

R. Kucharski

4

Ammono S.A.

, Czerwonego Krzyża 2/31, 00-377 Warsaw,

Poland

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P. Perlin;

P. Perlin

1

Institute of High Pressure Physics

, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,

Poland

2

TopGaN Sp. z o.o.

, Sokolowska 29/37, 01-142 Warsaw,

Poland

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C. Skierbiszewski

1

Institute of High Pressure Physics

, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,

Poland

2

TopGaN Sp. z o.o.

, Sokolowska 29/37, 01-142 Warsaw,

Poland

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Author & Article Information

M. Sawicka ^1,2,a)

,

G. Muziol ¹

,

H. Turski ¹

,

S. Grzanka ^1,2

,

E. Grzanka ^1,2

,

J. Smalc-Koziorowska ^1,2

,

J. L. Weyher ¹

,

C. Chèze ²

,

M. Albrecht ³

,

R. Kucharski ⁴

,

P. Perlin ^1,2

,

C. Skierbiszewski ^1,2

1

Institute of High Pressure Physics

, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,

Poland

2

TopGaN Sp. z o.o.

, Sokolowska 29/37, 01-142 Warsaw,

Poland

3

Leibniz Institute of Crystal Growth

, Max-Born Strasse 2, Berlin 12489,

Germany

4

Ammono S.A.

, Czerwonego Krzyża 2/31, 00-377 Warsaw,

Poland

^a)

Email: [email protected]

Appl. Phys. Lett. 104, 219901 (2014)

https://doi.org/10.1063/1.4879639

This article was originally published online with an incomplete funding number in the Acknowledgments. The sentence should have read: This work has been partially supported by the National Science Centre (grant decision No. DEC-2011/03/N/ST3/02950), the National Centre for Research and Development Grants No. IT13426, INNOTECH157829, European Union within and IAPP project SINOPLE Grant No. 230765 and European Union funds by the European Social Fund.

All online versions were corrected 16 April 2014.

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2014

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Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (20 $\bar{2}$ 1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

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Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (20 $\bar{2}$ 1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]