The first paragraph in column 1 of page 2 of the manuscript1 should be replaced with “Current transport across a barrier can be described by thermionic emission for our heterojunction and the current density, J, is given by
where A** is the effective Richardson constant, Θ is a interface transmission factor, T is the temperature, q is the magnitude of the electron charge, φb is the barrier height, n is the ideality factor, kB is Boltzmann constant, and V1 and V2 are the fractions of voltage supported in each material in the junction where the applied voltage V = V1 + V2 [Fig. 1(a)].2,3 The transmission factor, Θ, accounts for tunneling through a thin interfacial layer (∼1 nm) at the interface that reduces the transmission probability of holes across the heterojunction interface.”3
The analysis and conclusions for the measurement of the band alignment of the wafer-bonded InGaAs/Si heterojunction remain as reported.
