The advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers are studied. The energy band diagrams, carrier concentrations in the quantum wells, radiative recombination rate in the active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results show that the InGaN/GaN-InGaN-GaN light-emitting diode has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams which are favorable for the injection of electrons and holes and uniform distribution of these carriers in the quantum wells.
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Research Article| August 31 2011
Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers
Yen-Kuang Kuo, Tsun-Hsin Wang, Jih-Yuan Chang, Miao-Chan Tsai; Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers. Appl. Phys. Lett. 29 August 2011; 99 (9): 091107. https://doi.org/10.1063/1.3633268
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