The electronic structure of the interface between rubrene (C42H28) single crystal and ferromagnetic Ni is studied using an electrical method from a viewpoint of spintronics applications of organic single crystals. The Schottky barrier height at the interface is estimated to be 0.56 eV, and our finding is compared with previous results in spectroscopic method. This study clarifies the importance of electrical investigations of the Schottky barriers for various ferromagnet/organic systems and suggests that functionalization and carrier doping to rubrene single crystals are potential for obtaining the thinner barriers and yielding conclusive electrical spin injection.

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