We investigate the scope for low-temperature treatment of exciton/electron blocking interlayers in light-emitting diodes based on poly(9,9′-dioctylfiuorene-alt-benzothiadiazole) (F8BT). We focus on poly(9,9′-dioctylfluorene-alt-N-(4-butylphenyl)-diphenylamine) (TFB) interlayers processed at temperatures up to 50 °C, i.e., far below the glass transition temperature of TFB (∼156 °C). Continuous-wave and time-resolved photoluminescence studies confirm the formation of both excitons and exciplex species, as a result of the F8BT/TFB intermixing. Interestingly, however, we can still increase the electroluminescence external quantum efficiency from 0.05% to 0.5% and 1% for progressively thicker TFB films. We propose that a degree of intermixing may become acceptable as a trade-off to achieve low-temperature processability.
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12 December 2011
Research Article|
December 14 2011
Low-temperature treatment of semiconducting interlayers for high-efficiency light-emitting diodes based on a green-emitting polyfluorene derivative Available to Purchase
G. M. Lazzerini;
G. M. Lazzerini
1
Department of Physics and Astronomy and London Centre for Nanotechnology, University College London
, London WC1E 6BT, United Kingdom
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F. Di Stasio;
F. Di Stasio
1
Department of Physics and Astronomy and London Centre for Nanotechnology, University College London
, London WC1E 6BT, United Kingdom
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C. Fléchon;
C. Fléchon
1
Department of Physics and Astronomy and London Centre for Nanotechnology, University College London
, London WC1E 6BT, United Kingdom
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D. J. Caruana;
D. J. Caruana
2
Department of Chemistry, University College London
, 20 Gordon Street, London WC1H 0AJ, United Kingdom
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F. Cacialli
F. Cacialli
a)
1
Department of Physics and Astronomy and London Centre for Nanotechnology, University College London
, London WC1E 6BT, United Kingdom
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G. M. Lazzerini
1
F. Di Stasio
1
C. Fléchon
1
D. J. Caruana
2
F. Cacialli
1,a)
1
Department of Physics and Astronomy and London Centre for Nanotechnology, University College London
, London WC1E 6BT, United Kingdom
2
Department of Chemistry, University College London
, 20 Gordon Street, London WC1H 0AJ, United Kingdom
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
Appl. Phys. Lett. 99, 243305 (2011)
Article history
Received:
October 03 2011
Accepted:
November 18 2011
Citation
G. M. Lazzerini, F. Di Stasio, C. Fléchon, D. J. Caruana, F. Cacialli; Low-temperature treatment of semiconducting interlayers for high-efficiency light-emitting diodes based on a green-emitting polyfluorene derivative. Appl. Phys. Lett. 12 December 2011; 99 (24): 243305. https://doi.org/10.1063/1.3668093
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