A low-operating voltage and stable pentacene field-effect transistor (FET) employing thin low-dielectric constant gate layer of poly (methyl methacrylate) (PMMA) dissolved in propylene carbonate (PC) has been realized. This device exhibiting high field-effect mobility, a threshold voltage of −1 V, and a small sub-threshold slope at operating voltages below −3 V is compared with an FET cast from PMMA film dissolved in a low dipole moment solvent. The negligible hysteresis and excellent electrical stability of FETs under gate bias stress with the use of PC are traceable to the low density of trap states in PMMA bulk and at the interfaces.

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