The transfer of 100 nm gate length high electron mobility transistors onto plastic flexible substrate is reported. The layers of transistors are grown epitaxially on indium phosphide bulk substrate. By means of adhesive bonding technique, the transfer of these transistors onto polyimide substrate has been achieved. High cut-off frequencies fT = 120 GHz, fmax = 280 GHz are demonstrated. These microwave characteristics are comparable to those obtained on 100 nm gate high electron mobility transistors on rigid substrate, which makes the flexible substrate highly promising for large-area radio-frequency applications as well as high-speed processing ability in the near future.
REFERENCES
1.
S. M.
Venugopal
, D. R.
Allee
, M.
Quevedo
, B.
Gnade
, E.
Forsythe
, and D.
Morton
, in Proceedings of the IEEE International Conference on Reliablity Physics Symposium (IRPS), 2–6 May 2010
(Anaheim, CA, USA), pp. 644
–649
.2.
U.
Haas
, H.
Gold
, A.
Haase
, G.
Jakopic
, and B.
Stadlober
, Appl. Phys. Lett.
91
, 043511
(2007
).3.
A. Z.
Kattamis
, R. J.
Holmes
, I.-C.
Cheng
, K.
Long
, J. C.
Sturm
, S. R.
Forrest
, and S.
Wagner
, IEEE Electron Device Lett.
27
, 49
(2006
).4.
K. H.
Cherenack
, A. Z.
Kattamis
, B.
Hekmatshoar
, J. C.
Sturm
, and S.
Wagner
, IEEE Electron Device Lett.
28
, 1004
(2007
).5.
S.
Saxena
, D. C.
Kim
, J. H.
Park
, and J.
Jang
, IEEE Electron Device Lett.
31
, 1242
(2010
).6.
H.
Takita
, N.
Hashimoto
, C. T.
Nguyen
, M.
Kudo
, M.
Akabori
, and T.
Suzuki
, Appl. Phys. Lett.
97
, 012102
(2010
).7.
W.
Chen
, T. L.
Alford
, T. F.
Kuech
, and S. S.
Lau
, Appl. Phys. Lett.
98
, 203509
(2011
).8.
G.
Meneghesso
, D.
Buttari
, E.
Perin
, C.
Canali
, and E.
Zanoni
, Tech. Dig. - Int. Electron Devices Meet.
1998
, 227
.9.
T.
Akazaki
, H.
Takayanagi
, and T.
Enoki
, IEEE Electron Device Lett.
17
, 378
(1996
).10.
R. T.
Webster
, S.
Wu
, and A. F. M.
Anwar
, IEEE Electron Device Lett.
21
, 193
(2000
).11.
M. H.
Somerville
, A.
Ernst
, and J. A.
del Alamo
, IEEE Trans. Electron Devices
47
, 922
(2000
).12.
T.
Suemistu
, T.
Enoki
, M.
Tomizawa
, N.
Shigekawa
, and Y.
Ishii
, in Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials, 11–15 May 1997
(Hyannis, MA, USA), pp. 365
.13.
J.
Mateos
, T.
Gonzalez
, D.
Pardo
, S.
Bollaert
, X.
Wallart
, and A.
Cappy
, in Proceedings of the 2002 International Conference on Indium Phosphide and Related Materials, 12–16 May 2002
(Stockholm, SWEDEN), pp. 173
.© 2011 American Institute of Physics.
2011
American Institute of Physics
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