The transfer of 100 nm gate length high electron mobility transistors onto plastic flexible substrate is reported. The layers of transistors are grown epitaxially on indium phosphide bulk substrate. By means of adhesive bonding technique, the transfer of these transistors onto polyimide substrate has been achieved. High cut-off frequencies fT = 120 GHz, fmax = 280 GHz are demonstrated. These microwave characteristics are comparable to those obtained on 100 nm gate high electron mobility transistors on rigid substrate, which makes the flexible substrate highly promising for large-area radio-frequency applications as well as high-speed processing ability in the near future.
Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate
J. Shi, N. Wichmann, Y. Roelens, S. Bollaert; Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate. Appl. Phys. Lett. 14 November 2011; 99 (20): 203505. https://doi.org/10.1063/1.3663533
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