Silicon nitride thin films were deposited by plasma enhanced chemical vapor deposition on In0.53Ga0.47As (001) surfaces with and without NH3 pre-deposition treatments. The influence of the NH3 pre-deposition treatments on the electrical properties of the Si3N4/In0.53Ga0.47As interface was investigated by frequency dependent capacitance-voltage and conductance-voltage measurements. A fully unpinned C-V behavior was obtained for all samples. Samples that underwent NH3 pre-deposition treatment exhibited electrical characteristics with no evidence of the midgap interface states (Dit) effects in weak inversion, which are reported in the literature on In0.53Ga0.47As capacitors.

Topics
Semiconductors, Electrical properties and parameters, Field effect transistors, Gate stack, Electrostatics, Atomic layer deposition, Thin films, Chemical vapor deposition, Chemical compounds
© 2011 American Institute of Physics.
2011
American Institute of Physics
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