Copper oxide resistive memory layers have been synthesized by ion implantation. Devices fabricated from off-stoichiometric Cu2O exhibited unipolar switching in forward/reverse bias without a forming voltage. The on-state conduction of these devices is likely dominated by a metallic filament, which ruptures via Joule heating to transition the device to the high resistance off-state. Technology scaling was achieved by oxygen implanting copper filled vias. The resulting via-based memory devices exhibited unipolar resistive switching down to 48 nm in diameter.

1.
H. B.
Lv
,
M.
Yin
,
X. F.
Fu
,
Y. L.
Song
,
L.
Tang
,
P.
Zhou
,
C. H.
Zhao
,
T. A.
Tang
,
B. A.
Chen
, and
Y. Y.
Lin
,
IEEE Electron Devices Lett.
29
,
309
(
2008
).
2.
H. B.
Lv
,
M.
Yin
,
Y. L.
Song
,
X. F.
Fu
,
L.
Tang
,
P.
Zhou
,
C. H.
Zhao
,
T. A.
Tang
,
B. A.
Chen
, and
Y. Y.
Lin
,
IEEE Electron Devices Lett.
29
,
47
(
2008
).
3.
P.
Zhou
,
H. J.
Wan
,
Y. L.
Song
,
M.
Yin
,
H. B.
Lv
,
Y. Y.
Lin
,
S.
Song
,
R.
Huang
,
J. G.
Wu
, and
M. H.
Chi
,
Tech. Dig. – Int. Electron Devices Meet.
2009
,
978
.
4.
A.
Chen
,
S.
Haddad
,
Y. C.
Wu
,
T.-N.
Fang
,
Z.
Lan
,
S.
Avanzino
,
S.
Pangrle
,
M.
Buynoski
,
M.
Rathor
,
W.
Cai
,
N.
Tripsas
,
C.
Bill
,
M.
Vanbuskirk
, and
M.
Taguchi
,
Tech. Dig. – Int. Electron Devices Meet.
2005
,
746
.
5.
S. M.
Bishop
,
B. D.
Briggs
,
Z. P.
Rice
,
S.
Addepalli
,
N. R.
McDonald
, and
N. C.
Cady
, in Proceedings from the 2011 Spring Materials Research Society (MRS) Meeting, San Francisco, CA, 25–29 April
2011
.
6.
R.
Waser
,
R.
Dittmann
,
G.
Staikov
, and
K.
Szot
,
Adv. Mater.
21
,
2632
(
2009
).
7.
M.
Liu
,
Z.
Abid
,
W.
Wang
,
X.
He
,
Q.
Liu
, and
W.
Guan
,
Appl. Phys. Lett.
94
,
233106
(
2009
).
8.
K. M.
Kim
,
B. J.
Choi
,
Y. C.
Shin
,
S.
Choi
, and
C. S.
Hwang
,
Appl. Phys. Lett.
91
,
012907
(
2007
).
9.
U.
Russo
,
D.
Ielmini
,
C.
Cagli
, and
A. L.
Lacaita
,
IEEE Trans. Devices Lett.
56
,
193
(
2009
).
10.
Q.
Liu
,
C.
Dou
,
Y.
Wang
,
S.
Long
,
W.
Wang
,
M.
Liu
,
M.
Zhang
, and
J.
Chen
,
Appl. Phys. Lett.
95
,
023501
(
2009
).
11.
W. D.
Callister
, Jr.
,
Materials Science and Engineering: An Introduction
, 4th ed. (
John Wiley & Sons Inc.
,
New York
,
1997
).
12.
W.
Zhang
,
S. H.
Brongersma
,
Z.
Li
,
D.
Li
,
O.
Richard
, and
K.
Maex
,
J. Appl. Phys.
101
,
063703
(
2007
).
13.
K.
Fujiwara
,
T.
Nemoto
,
M. J.
Rozenberg
,
Y.
Nakamura
, and
H.
Takagi
,
Jpn. J. Appl. Phys.
47
,
6266
(
2008
).
14.
R.
Yasuhara
,
K.
Fujiwara
,
K.
Horiba
,
H.
Kumigashira
,
M.
Kotsugi
,
M.
Oshima
, and
H.
Takagi
,
Appl. Phys. Lett.
95
,
012110
(
2009
).
15.
H.
Lv
and
T.
Tang
,
Appl. Phys. A.
102
,
1015
(
2011
).
16.
Y.-S.
Chen
,
H.-Y.
Lee
,
P.-S.
Chen
,
T.-Y.
Wu
,
C.-C.
Wang
,
P.-J.
Tzeng
,
F.
Chen
,
M.-J.
Tsai
, and
C.
Lien
,
IEEE Trans. Devices Lett.
31
,
1473
(
2010
).
17.
H.
Lv
,
M.
Wang
,
H.
Wan
,
Y.
Song
,
W.
Luo
,
P.
Zhou
,
T.
Tang
,
Y.
Lin
,
R.
Huang
,
S.
Song
,
J. G.
Wu
,
H. M.
Wu
, and
M. H.
Chi
,
Appl. Phys. Lett.
94
,
213502
(
2009
).
18.
J. Y.
Son
and
Y.-H.
Shin
,
Appl. Phys. Lett.
92
,
222106
(
2008
).
19.
S.A.
Campell
,
The Science and Engineering of Microelectronic Fabrication
, 2nd ed. (
Oxford University Press
,
New York
,
2001
).
You do not currently have access to this content.