Tunneling magnetoresistance in a vertical manganite junction was investigated by low-temperature scanning laser microscopy (LTSLM) allowing to determine the local relative magnetization M orientation of the two electrodes as a function of magnitude and orientation of the external magnetic field H. Sweeping the field amplitude at fixed orientation revealed magnetic domain nucleation and propagation in the junction electrodes. For the high-resistance state, an almost single-domain antiparallel magnetization configuration was achieved, while in the low-resistance state the junction remained in a multidomain state. Calculated resistance Rcalc(H) based on the local M configuration obtained by LTSLM is in quantitative agreement with R(H) measured by magnetotransport.

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Each image was taken in the following sequence: After preparing the MTJ at a certain value of H (and measuring R(H)), the field was reduced to H = 0, the image was taken, and the field was swept back to the initial value of H. During this sweep sequence, the resistance did slightly change (by typically ±5 − 10%) but always returned back to the initial value. This procedure could partially explain the deviations between R and Rcalc for α = 7° for field values above the resistance maximum [cf. Fig. 2(a)], as in this particular case the resistance upon sweeping back to H = 0 went up by up to 20%. However, this effect was much weaker in all other cases.

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