The interface trap density (Dit) and bonding of the HfO2/InP interface is investigated. The energy distribution of interface states extracted using capacitance-voltage measurements show a peak near midgap in InP and a tail, which extends into the InP conduction band. Both the Dit peak and the conduction band Dit increase with increasing post-deposition annealing temperature. A substantial increase in the native oxides with annealing temperature is observed with x-ray photoelectron spectroscopy. The possible bonding states responsible for the defects are presented.
REFERENCES
1.
A. M.
Sonnet
, C. L.
Hinkle
, M. N.
Jivani
, R. A.
Chapman
, G. P.
Pollack
, R. M.
Wallace
, and E. M.
Vogel
, Appl. Phys. Lett.
93
, 122109
(2008
).2.
N.
Goel
, D.
Heh
, S.
Koveshnikov
, I.
Ok
, S.
Oktyabrsky
, V.
Tokranov
, R.
Kambhampati
, M.
Yakimov
, Y.
Sun
, P.
Pianetta
, et al., Tech. Dig.-Int. Electron Devices Meet.
2008
, 363
.3.
M.
Radosavljevic
, B.
Chu-Kung
, S.
Corcoran
, G.
Dewey
, M. K.
Hudait
, J. M.
Fastenau
, J.
Kavalieros
, W. K.
Liu
, D.
Lubyshev
, M.
Metz
, et al., Tech. Dig.-Int. Electron Devices Meet.
2009
, 319
.4.
M.
Radosavljevic
, G.
Dewey
, J. M.
Fastenau
, J.
Kavalieros
, R.
Kotlyar
, B.
Chu-Kung
, W. K.
Liu
, D.
Lubyshev
, M.
Metz
, K.
Millard
, et al., Tech. Dig.-Int. Electron Devices Meet.
2010
, 127
.5.
H.
Zhao
, Y.-T.
Chen
, J. H.
Yum
, Y.
Wang
, F.
Zhou
, F.
Xue
, and J. C.
Lee
, Appl. Phys. Lett.
96
, 102101
(2010
).6.
F.
Xue
, H.
Zhao
, Y.-T.
Chen
, Y.
Wang
, F.
Zhou
, and J. C.
Lee
, Appl. Phys. Lett.
98
, 082106
(2011
).7.
G. W.
Anderson
, M. C.
Hanf
, P. R.
Norton
, Z. H.
Lu
, and M. J.
Graham
, Appl. Phys. Lett.
65
, 171
(1994
).8.
J. F.
Wager
, D. L.
Ellsworth
, S. M.
Goodnick
, and C. W.
Wilmsen
, J. Vac. Sci. Technol.
19
, 513
(1981
).9.
C. L.
Hinkle
, M.
Milojevic
, E. M.
Vogel
, and R. M.
Wallace
, Appl. Phys. Lett.
95
, 151905
(2009
).10.
E. M.
Vogel
, W. K.
Henson
, C. A.
Richter
, and J. S.
Suehle
, IEEE Trans. Electron Devices
47
, 601
(2000
).11.
S. M.
Sze
and K. K.
Ng
, Physics of Semiconductor Devices
, 3rd ed. (Wiley-Interscience
, New York
, 2007
), p. 221
.12.
E. H.
Nicollian
and J. R.
Brews
, MOS Physics and Technology
(Wiley-Interscience
, New York
, 1982
).13.
A. M.
Sonnet
, C. L.
Hinkle
, H.
Dawei
, G.
Bersuker
, and E. M.
Vogel
, IEEE Trans. Electron Devices
, 57
, 2599
(2010
).14.
C. N.
Berglund
, IEEE Trans. Electron Devices
13
, 701
(1966
).15.
G.
Hollinger
, E.
Bergignat
, J.
Joseph
, and Y.
Robach
, J. Vac. Sci. Technol. A
3
, 2082
(1985
).16.
D.
Kikuchi
and S.
Adachi
, Mater. Sci. Eng. B
76
, 133
(2000
).17.
E. P.
O’Reilly
and J.
Robertson
, Phys. Rev. B
34
, 8684
(1986
).18.
L.
Lin
and J.
Robertson
, Appl. Phys. Lett.
98
, 082903
(2011
).19.
H.-P.
Komsa
and A.
Pasquarello
, Microelectron. Eng.
88
, 1436
(2011
).© 2011 American Institute of Physics.
2011
American Institute of Physics
You do not currently have access to this content.
