We present the tunneling measurements of sub-micron metal/insulator/graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM [Y. Zhang et al., Nat. Phys. 4, 627 (2008)]. No gap appears at temperatures above 150 K, which is four times smaller than the theoretically expected Tc, from the accepted mean field model [T. O. Wehling et al., Phys. Rev. Lett. 101, 216803 (2008)]. We show that taking into account an additional vibrational effect of out-of-plane phonon soft modes the gap may disappear from the measurements at temperatures much lower than the calculated Tc.
Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions
S. Hacohen-Gourgy, I. Diamant, B. Almog, Y. Dubi, G. Deutscher; Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions. Appl. Phys. Lett. 24 October 2011; 99 (17): 172108. https://doi.org/10.1063/1.3657146
Download citation file: