The charge-trapping properties of HfYON film are investigated by using the Al/HfYON/SiO2/Si structure. The physical features of this film were explored by transmission electron microscopy and x-ray photoelectron spectroscopy. The proposed device shows better charge-trapping characteristics than samples with HfON or Y2O3 as the charge-trapping layer due to its higher trapping efficiency, as confirmed by extracting their charge-trap centroid and charge-trap density. Moreover, the Al/Al2O3/HfYON/SiO2/Si structure shows high program speed (4.5 V at +14 V, 1 ms), large memory window (6.0 V at ±14 V, 1 s), and good retention property, further demonstrating that HfYON is a promising candidate as the charge-trapping layer for nonvolatile memory applications.

1.
X. G.
Wang
,
J.
Liu
,
W. P.
Bai
, and
D. L.
Kwong
,
IEEE Trans. Electron Devices
51
,
597
(
2008
).
2.
C. H.
Chang
and
J. G.
Hwu
,
J. Appl. Phys.
105
,
094103
(
2009
).
3.
H. J.
Yang
,
C. F.
Cheng
,
W. B.
Chen
,
S. H.
Lin
,
F. S.
Yeh
,
S. P.
McAlister
, and
A.
Chin
,
IEEE Trans. Electron Devices
55
,
1417
(
2008
).
4.
J. Y.
Wu
,
Y. T.
Chen
,
M. H.
Lin
, and
T. B.
Wu
,
IEEE Electron Device Lett.
31
,
993
(
2010
).
5.
T. M.
Pan
and
W. W.
Yeh
,
IEEE Trans. Electron Devices
55
,
2354
(
2008
).
6.
Y. H.
Wu
,
L. L.
Chen
,
Y. S.
Lin
,
M. Y.
Li
, and
H. C.
Wu
,
IEEE Electron Device Lett.
30
,
1290
(
2009
).
7.
S. H.
Lin
,
A.
Chin
,
F. S.
Yeh
, and
S. P.
McAlister
,
Tech. Dig. - Int. Electron Devices Meet.
2008
,
843
(
2008
).
8.
G. D.
Wilk
,
R. M.
Wallace
, and
J. M.
Anthony
,
J. Appl. Phys.
89
,
5243
(
2001
).
9.
G.
Shang
,
P. W.
Peacock
, and
J.
Robertson
,
Appl. Phys. Lett.
84
,
106
(
2004
).
10.
M.
Copel
,
N.
Bojarczuk
,
L. F.
Edge
, and
S.
Guha
,
Appl. Phys. Lett.
97
,
182901
(
2010
).
11.
C. X.
Li
and
P. T.
Lai
,
Appl. Phys. Lett.
95
,
022910
(
2009
).
12.
K. Y.
Tong
,
E. V.
Jelenkovic
,
W.
Liu
, and
J. Y.
Dai
,
Microelectron. Eng.
83
,
293
(
2006
).
13.
O.
Renault
,
D.
Samour
,
J. F.
Damlencourt
,
D.
Blin
,
F.
Martin
, and
S.
Marthon
,
Appl. Phys. Lett.
81
,
3627
(
2002
).
14.
J. J.
Chambers
and
G. N.
Parsons
,
J. Appl. Phys.
90
,
918
(
2001
).
15.
Z. H.
Liu
,
P. T.
Lai
, and
Y. C.
Cheng
,
IEEE Trans. Electron Devices
38
,
344
(
1991
).
You do not currently have access to this content.