The charge-trapping properties of HfYON film are investigated by using the Al/HfYON/SiO2/Si structure. The physical features of this film were explored by transmission electron microscopy and x-ray photoelectron spectroscopy. The proposed device shows better charge-trapping characteristics than samples with HfON or Y2O3 as the charge-trapping layer due to its higher trapping efficiency, as confirmed by extracting their charge-trap centroid and charge-trap density. Moreover, the Al/Al2O3/HfYON/SiO2/Si structure shows high program speed (4.5 V at +14 V, 1 ms), large memory window (6.0 V at ±14 V, 1 s), and good retention property, further demonstrating that HfYON is a promising candidate as the charge-trapping layer for nonvolatile memory applications.
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12 September 2011
Research Article|
September 14 2011
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films
X. D. Huang;
X. D. Huang
1Department of Electrical & Electronic Engineering,
The University of Hong Kong
, Pokfulam Road, Hong Kong
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L. Liu;
L. Liu
2Department of Electronic Science & Technology,
Huazhong University of Science and Technology
, Wuhan 430074, People’s Republic of China
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J. P. Xu;
J. P. Xu
2Department of Electronic Science & Technology,
Huazhong University of Science and Technology
, Wuhan 430074, People’s Republic of China
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P. T. Lai
1Department of Electrical & Electronic Engineering,
The University of Hong Kong
, Pokfulam Road, Hong Kong
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a)
Electronic mail: [email protected].
Appl. Phys. Lett. 99, 112903 (2011)
Article history
Received:
June 09 2011
Accepted:
August 12 2011
Citation
X. D. Huang, L. Liu, J. P. Xu, P. T. Lai; Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films. Appl. Phys. Lett. 12 September 2011; 99 (11): 112903. https://doi.org/10.1063/1.3639275
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