We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The -wide (Ga,Mn)As wires, oriented in  and directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at temperatures between 4.5 and 75 K. Depending on the orientation of the wire, the additional uniaxial anisotropy observed along the axis of the -wide samples either increased or decreased the total uniaxial anisotropy.
Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires
J. Shiogai, D. Schuh, W. Wegscheider, M. Kohda, J. Nitta, D. Weiss; Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires. Appl. Phys. Lett. 21 February 2011; 98 (8): 083101. https://doi.org/10.1063/1.3556556
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