In this work, the kinetics of platinum silicide formation for thin Pt films (50 nm) on monocrystalline 100 silicon is investigated via in situ resistance measurements under isothermal (197275°C) conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4±0.1. Additionally, an effective activation energy EA=1.7±0.1eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts.

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