In this work, the kinetics of platinum silicide formation for thin Pt films (50 nm) on monocrystalline silicon is investigated via in situ resistance measurements under isothermal conditions. For diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent . Additionally, an effective activation energy was derived using the Avrami values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts.
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