In this work, the experimental impact of SF6 plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO2 via postgate SF6 plasma treatment. The decreased subthreshold swing, gate leakage (Ig), and increased effective channel mobility (μeff) indicate that better interface and bulk oxide quality have been achieved with SF6 plasma treatment due to the formation of stronger Hf–F bonds. Drive current (Id), transconductance (Gm), and effective channel mobility (μeff) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices.

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