Results of photoresponse measurements performed on long-wave infrared photoconductors fabricated from HgTe-HgCdTe superlattices grown by molecular beam epitaxy are presented. Absolute spectral photoresponse measurements as a function of temperature and applied electric field have be undertaken, with the peak photoresponse of 3.3×103V/W measured at 100 K. Sweepout effects were observed for fields greater than 20 V/cm and quantum efficiencies approaching 80% for 5μm thick devices have been predicted from absorption measurements of grown material.

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