In this paper, we report the design, fabrication, and characterization of an InP/InGaAs heterojunction bipolar transistor (HBT) employing a lattice-mismatched In0.53Ga0.47As/GaAs strained-layer-superlattice (SLS) base structure. The performance of the SLS-base device is also compared with that of an In0.53Ga0.47As uniform-base structure. The digitally graded-base devices exhibit a slightly lower gain at low bias voltage and a higher current gain at high currents. While the offset voltage remains comparable in the two structures, the graded-base InP/InGaAs HBTs, with built-in fields of 66kV/cm, have typically a maximum dc current gain of 18% larger than that of transistors with uniform base.

1.
R. E.
Makon
,
R.
Driad
,
K.
Schneider
,
M.
Ludwig
,
R.
Aidam
,
R.
Quay
,
M.
Schlechtweg
, and
G.
Weimann
,
IEEE J. Solid-State Circuits
41
,
2215
(
2006
).
2.
K.
Schneider
,
R.
Driad
,
R. E.
Makon
,
M.
Ludwig
,
H.
Maßler
,
R.
Quay
,
M.
Schlechtweg
, and
G.
Weimann
,
IEEE Trans. Microwave Theory Tech.
53
,
3378
(
2005
).
3.
M. J. W.
Rodwell
,
M.
Le
, and
B.
Brar
,
Proc. IEEE
96
,
271
(
2008
).
4.
P. M.
Asbeck
,
F. M. C.
Chang
,
K. C.
Wang
,
G. J.
Sullivan
, and
D. T.
Cheung
,
Proc. IEEE
81
,
1709
(
1993
).
5.
J. R.
Hayes
,
F.
Capasso
,
R. J.
Malik
,
A. C.
Gossard
, and
W.
Weigmann
,
Appl. Phys. Lett.
43
,
949
(
1983
).
6.
K.
Kurishima
,
H.
Nakajima
,
T.
Kobayashi
,
Y.
Matsuoka
, and
T.
Ishibashi
,
IEEE Trans. Electron Devices
41
,
1319
(
1994
).
7.
H.
Kroemer
,
J. Vac. Sci. Technol. B
1
,
126
(
1983
).
8.
K.
Kurishima
,
H.
Nakajima
,
S.
Yamahata
,
T.
Kobayashi
, and
Y.
Matsuoka
,
Jpn. J. Appl. Phys., Part 1
34
,
1221
(
1995
).
9.
J. H.
Tsai
,
Y. H.
Lee
,
N. F.
Dale
,
J. S.
Sheng
,
Y. C.
Ma
, and
S. S.
Ye
,
Appl. Phys. Lett.
96
,
063505
(
2010
).
10.
F.
Capasso
,
A. S.
Vengurlekar
,
A.
Hutchinson
, and
W. T.
Tsang
,
Electron. Lett.
25
,
1117
(
1989
).
11.
W. T.
Masselink
and
M.
Zachau
,
J. Cryst. Growth
127
,
14
(
1993
).
12.
M.
Zirngibl
and
M.
Ilegems
,
J. Appl. Phys.
69
,
8392
(
1991
).
13.
F.
Capasso
,
H. M.
Cox
,
A. L.
Hutchinson
,
N. A.
Olsson
, and
S. G.
Hummel
,
Appl. Phys. Lett.
45
,
1193
(
1984
).
14.
J. F.
Palmier
,
C.
Minot
,
J. L.
Lievin
,
F.
Alexandre
,
J. C.
Harmand
,
J.
Dangla
,
C.
Dubon-Chevallier
, and
D.
Ankri
,
Appl. Phys. Lett.
49
,
1260
(
1986
).
15.
R.
Aidam
,
R.
Lösch
,
R.
Driad
,
K.
Schneider
, and
R. E.
Makon
,
J. Cryst. Growth
301–302
,
1001
(
2007
).
16.
R.
Driad
,
W. R.
McKinnon
,
S. P.
McAlister
,
T.
Garanzotis
, and
A. J.
SpringThorpe
,
Semicond. Sci. Technol.
16
,
171
(
2001
).
You do not currently have access to this content.