Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors

We report a strong Stark effect in electroluminescence (EL) from thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors. The EL peak shows a large Stark shift of up to 50 meV when a gate-induced electric field is applied. Such a large shift is observed because of the strong confinement of carriers by a $Si/SiO2$ quantum well. Furthermore, we observe a sudden decrease of EL intensity at a specific electric field. This feature is ascribed to electron dissociation from phosphorous atom to subbands in a triangular well at the $Si/SiO2$ interface by the applied electric field.