Taking advantage of the relatively low temperature crystallization and high orientation of thin films of (PLCT), growth of a highly (100)-oriented (PNZT) multilayer film on a substrate is achieved at a temperature as low as . The interfacial diffusion in the multilayer film is decreased by the low temperature of crystallization. A relatively low dielectric constant and high pyrocoefficient are simultaneously achieved in the highly (100)-oriented PLCT/PNZT multilayer film. The high figure-of-merit obtained for this multilayer film make it a good candidate for application in pyroelectric thin-film devices.
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2011
American Institute of Physics
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