Interfacial states of silicon nanowire field-effect transistors with rectangular-like cross-sections (wire height of 10 nm and widths of 9 and 18 nm) have been evaluated from the transfer characteristics in the subthreshold region measured at cryogenic temperatures, where kinks in the drain current becomes prominent. It is found that the kinks can be well-explained assuming local interfacial states near the conduction band (Ec). The main extracted local states have been shown to exist at 10 and 31 meV below Ec with the densities of 1.3×1013cm2/eV and 5.4×1012cm2/eV, respectively. By comparing two field-effect transistors with different wire widths, the former states can be assigned to the states located at the corner and the side surface of the wire, and the latter to the top and the bottom surfaces.

1.
J. -P.
Colinge
,
Solid-State Electron.
48
,
897
(
2004
).
2.
S.
Sato
,
K.
Kakushima
,
P.
Ahmet
,
K.
Ohmori
,
K.
Yamada
, and
H.
Iwai
,
Microelectron. Reliab.
51
,
879
(
2011
).
3.
M.
Cassé
,
K.
Tachi
,
S.
Thiele
, and
T.
Ernst
,
Appl. Phys. Lett.
96
,
123506
(
2010
).
4.
D. J.
DiMaria
,
E.
Cartier
, and
D.
Arnold
,
J. Appl. Phys.
73
,
3367
(
1993
).
5.
S.
Sato
,
H.
Kamimura
,
H.
Arai
,
K.
Kakushima
,
P.
Ahmet
,
K.
Ohmori
,
K.
Yamada
, and
H.
Iwai
,
Solid-State Electron.
54
,
925
(
2010
).
6.
J. G. J.
Chern
,
P.
Chang
,
R. F.
Motta
, and
N.
Godinho
,
IEEE Electron Device Lett.
1
,
170
(
1980
).
7.
R. J.
Van Overstraeten
,
G. J.
Declerck
, and
P. A.
Muls
,
IEEE Trans. Electron Devices
22
,
282
(
1975
).
8.
J. -S.
Lyu
,
K. -S.
Nam
, and
C.
Lee
,
Jpn. J. Appl. Phys., Part 1
32
,
4393
(
1993
).
9.
J. -P.
Colinge
,
Silicon-on-Insulator Technology: Materials to VLSI
, 3rd ed. (
Springer
,
New York
,
2004
).
10.
M.
M.-Mattausch
,
H. J.
-
Mattausch
, and
T.
Ezaki
,
The Physics and Modeling of MOSFETs: Surface-Potential Model HiSIM
(
World Scientific
,
Singapore
,
2008
).
11.
M.
M.-Mattausch
,
U.
Feldmann
,
A.
Rahm
,
M.
Bollu
, and
D.
Savignac
,
IEEE Trans. Comput.-Aided Des.
15
,
1
(
1996
).
12.
F.
Dauge
,
J.
Pretet
,
S.
Cristoloveanu
,
A.
Vandooren
,
L.
Mathew
,
J.
Jomaah
, and
B. -Y.
Nguyen
,
Solid-State Electron.
48
,
535
(
2004
).
13.
E. H.
Nicollian
and
A.
Goetzberger
,
Bell Syst. Tech. J.
46
,
1055
(
1967
).
14.
Y.
Nishi
,
Jpn. J. Appl. Phys.
10
,
52
(
1971
).
15.
P. J.
Caplan
,
E. H.
Poindexter
,
B. E.
Deal
, and
R. R.
Razouk
,
J. Appl. Phys.
50
,
5847
(
1979
).
16.
D.
Vuillaume
,
D.
Goguenheim
, and
G.
Vincent
,
Appl. Phys. Lett.
57
,
1206
(
1990
).
17.
E. H.
Poindexter
,
G. J.
Gerardi
,
M. -E.
Rueckel
, and
P. J.
Caplan
,
J. Appl. Phys.
56
,
2844
(
1984
).
18.
G. J.
Gerardi
,
E. H.
Poindexter
, and
P. J.
Caplan
,
Appl. Phys. Lett.
49
,
348
(
1986
).
19.
B. J.
O’Sullivan
,
P. K.
Hurley
,
C.
Leveugle
, and
J. H.
Das
,
J. Appl. Phys.
89
,
3811
(
2001
).
20.
J. P.
Campbell
and
P. M.
Lenahan
,
Appl. Phys. Lett.
80
,
1945
(
2002
).
21.
P. K.
Hurley
,
B. J.
O’Sullivan
,
F. N.
Cubaynes
,
P. A.
Stolk
,
F. P.
Widdershoven
, and
J. H.
Das
,
J. Electrochem. Soc.
149
,
G194
(
2002
).
22.
P. K.
Hurley
,
A.
Stesmans
,
V. V.
Afanas’ev
,
B. J.
O’Sullivan
, and
E.
O’Callaghan
,
J. Appl. Phys.
93
,
3971
(
2003
).
23.
N. H.
Thoan
,
K.
Keunen
,
V. V.
Afanas’ev
, and
A.
Stesmans
,
J. Appl. Phys.
109
,
013710
(
2011
).
24.
L.
Sekaric
,
O.
Gunawan
,
A.
Majumdar
,
X. -H.
Liu
,
D.
Weinstein
, and
J. -W.
Sleight
,
Appl. Phys. Lett.
95
,
023113
(
2009
).
25.
A.
Seike
,
T.
Tange
,
I.
Sano
,
Y.
Sugiura
,
D.
Kosemura
,
A.
Ogura
, and
I.
Ohdomari
,
Appl. Phys. Lett.
91
,
062108
(
2007
).
26.
K. L.
Ngai
and
C. T.
White
,
J. Appl. Phys.
52
,
320
(
1981
).
27.
G. M.
Lopez
and
V.
Fiorentini
,
Phys. Rev. B
69
,
155206
(
2004
).
28.
A. M.
Pyzyna
,
D. R.
Clarke
, and
N. C.
MacDonald
,
IEEE International Conference on Micro Electro Mechanical Systems
,
2004
, p.
189
.
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