Stranski–Krastanow growth, modified by the presence of submonolayer coverages of carbon or antimony, is investigated for tensile strained silicon epilayers on Ge(001) substrates. We find a reduction in the wetting layer thickness from >10 monolayers without surfactant, to 7.5 and 4.5 monolayers, respectively, with Sb and C predeposition. Very small islands with an aspect ratio of 0.05 and a narrow size distribution were found for Sb-mediated growth. For both adatom species the wetting layer is free of dislocations, whereas the Si islands are almost completely strain relaxed, mainly via sessile 90° misfit dislocations. We show that early dislocation nucleation is an inherent property of a (001) oriented cubic heterosystem under tensile strain.

1.
I. N.
Stranski
and
L.
Krastanow
,
Sitzungsber. Akad. Wiss. Wien, Math.-Naturwiss. Kl., Abt. 2B
146
,
797
(
1938
).
2.
Review in,
J.
Stangl
,
V.
Holy
, and
G.
Bauer
,
Rev. Mod. Phys.
76
,
725
(
2004
).
3.
T.
Berer
,
D.
Pachinger
,
G.
Pillwein
,
M.
Mühlberger
,
H.
Lichtenberger
,
G.
Brunthaler
, and
F.
Schäffler
,
Appl. Phys. Lett.
88
,
162112
(
2006
).
4.
Review in,
F.
Schäffler
,
Semicond. Sci. Technol.
12
,
1515
(
1997
).
5.
N.
Hirashita
,
Y.
Moriyama
,
N.
Sugiyama
,
E.
Toyoda
, and
S.
Takagi
,
Appl. Phys. Lett.
89
,
091916
(
2006
).
6.
J. E.
Van Nostrand
,
D. G.
Cahill
,
I.
Petrov
, and
J. E.
Greene
,
J. Appl. Phys.
83
,
1096
(
1998
).
7.
Y. H.
Xie
,
G. H.
Glimer
,
C.
Roland
,
P. J.
Silverman
,
S. K.
Buratto
,
J. Y.
Cheng
,
E. A.
Fitzgerald
,
A. R.
Kortan
,
S.
Schuppler
,
M. A.
Marcus
, and
P. H.
Citrin
,
Phys. Rev. Lett.
73
,
3006
(
1994
).
8.
D.
Pachinger
,
H.
Groiss
,
H.
Lichtenberger
,
J.
Stangl
,
G.
Hesser
, and
F.
Schäffler
,
Appl. Phys. Lett.
91
,
233106
(
2007
).
9.
D.
Pachinger
,
H.
Lichtenberger
,
G.
Chen
,
J.
Stangl
,
G.
Hesser
, and
F.
Schäffler
,
Thin Solid Films
517
,
62
(
2008
).
10.
B. J.
Spencer
,
P. W.
Voorhees
, and
J.
Tersoff
,
Phys. Rev. B
64
,
235318
(
2001
).
11.
J. W.
Matthews
and
A. E.
Blakeslee
,
J. Cryst. Growth
27
,
118
(
1974
).
12.
M.
Copel
,
M. C.
Reuter
,
M.
Horn von Hoegen
, and
R. M.
Tromp
,
Phys. Rev. B
42
,
11682
(
1990
).
13.
O. G.
Schmidt
,
C.
Lange
,
K.
Eberl
,
O.
Kienzle
, and
F.
Ernst
,
Appl. Phys. Lett.
71
,
2340
(
1997
).
14.
O.
Leifeld
,
A.
Beyer
,
D.
Grützmacher
, and
K.
Kern
,
Phys. Rev. B
66
,
125312
(
2002
).
15.
L. H.
Chan
and
E. I.
Altman
,
Phys. Rev. B
63
,
195309
(
2001
).
16.
S.
Esch
,
M.
Hohage
,
T.
Michely
, and
G.
Comsa
,
Phys. Rev. Lett.
72
,
518
(
1994
).
17.
H.
Okumura
,
T.
Akane
, and
S.
Matsumoto
,
Appl. Surf. Sci.
125
,
125
(
1998
).
18.
S. Y.
Shiryaev
,
F.
Jensen
,
J. L.
Hansen
,
J. W.
Petersen
, and
A. N.
Larsen
,
Phys. Rev. Lett.
78
,
503
(
1997
).
19.
C.
Teichert
,
C.
Hofer
,
K.
Lyutovich
,
M.
Bauer
, and
E.
Kasper
,
Thin Solid Films
380
,
25
(
2000
).
20.
P. M. J.
Marée
,
J. C.
Barbour
,
J. F.
van der Veen
,
K. L.
Kavanagh
,
C. W. T.
Bulle-Lieuwma
, and
M. P. A.
Viegers
,
J. Appl. Phys.
62
,
4413
(
1987
).
21.
P.
Liu
,
Y. W.
Zhang
,
B.
Fox
, and
C.
Lu
,
Appl. Phys. Lett.
84
,
714
(
2004
).
22.
W.
Wegscheider
,
K.
Eberl
,
G.
Abstreiter
,
H.
Cerva
, and
H.
Oppolzer
,
Appl. Phys. Lett.
57
,
1496
(
1990
).
23.
E. P.
Kvam
and
R.
Hull
,
J. Appl. Phys.
73
,
7407
(
1993
).
24.
A.
Raviswaran
,
C.
Liu
,
J.
Kim
, and
D. G.
Cahill
,
Phys. Rev. B
63
,
125314
(
2001
).
25.
M.
Grydlik
,
M.
Brehm
,
F.
Hackl
,
H.
Groiss
,
T.
Fromherz
,
F.
Schäffler
, and
G.
Bauer
,
New J. Phys.
12
,
063002
(
2010
).
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