We show that the surface morphology and electrical properties of graphene grown on SiC(0001) wafers depend strongly on miscut angle, even for nominally “on-axis” wafers. Graphene grown on pit-free surfaces with narrow terraces (miscut above 0.28°) shows substantially lower Hall mobility than graphene on surfaces with miscut angles below 0.1° that have wider terraces with some pits. The effect of pits on mobility is not detrimental if flat, pit-free areas with dimensions larger than the carrier mean free path remain between pits. Using these results, we optimized the growth process, achieving room-temperature mobility up to 3015cm2/Vs at N=2.0×1012cm2.

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