We report on evaluation of transfer accuracy in a single-electron turnstile using silicon nanowire metal-oxide-semiconductor field-effect transistors at 17 K. Single-electron shuttle transfer and single-shot detection of a single electron are used to detect errors of the transfer. Errors for the transfer through an electrostatically formed island are ascribed to thermal processes. We also observed single-electron transfer mediated by a trap level, which exhibits a wide current plateau and a low error rate.
REFERENCES
1.
K.
Nishiguchi
, A.
Fujiwara
, Y.
Ono
, H.
Inokawa
, and Y.
Takahashi
, Appl. Phys. Lett.
88
, 183101
(2006
).2.
G.
Fève
, A.
Mahé
, J. M.
Berroir
, T.
Kontos
, B.
Plaçais
, D. C.
Glattli
, A.
Cavanna
, B.
Etienne
, and Y.
Jin
, Science
316
, 1169
(2007
).3.
M. W.
Keller
, J. M.
Martinis
, N. M.
Zimmerman
, and A. H.
Steinbach
, Appl. Phys. Lett.
69
, 1804
(1996
).4.
M. W.
Keller
, Metrologia
45
, 102
(2008
).5.
H.
Pothier
, P.
Lafarge
, C.
Urbina
, D.
Esteve
, and M. H.
Devoret
, Europhys. Lett.
17
, 249
(1992
).6.
L. J.
Geerligs
, V. F.
Anderegg
, P. A. M.
Holweg
, J. E.
Mooij
, H.
Pothier
, D.
Esteve
, C.
Urbina
, and M. H.
Devoret
, Phys. Rev. Lett.
64
, 2691
(1990
).7.
L. P.
Kouwenhoven
, A. T.
Johnson
, N. C.
van der Vaart
, C. J. P. M.
Harmans
, and C. T.
Foxon
, Phys. Rev. Lett.
67
, 1626
(1991
).8.
A.
Fujiwara
, N. M.
Zimmerman
, Y.
Ono
, and Y.
Takahashi
, Appl. Phys. Lett.
84
, 1323
(2004
).9.
A.
Fujiwara
, K.
Nishiguchi
, and Y.
Ono
, Appl. Phys. Lett.
92
, 042102
(2008
).10.
M. D.
Blumenthal
, B.
Kaestner
, L.
Li
, S.
Giblin
, T. J. B. M.
Janssen
, M.
Pepper
, D.
Anderson
, G.
Jones
, and D. A.
Ritchie
, Nat. Phys.
3
, 343
(2007
).11.
S. P.
Giblin
, S. J.
Wright
, J. D.
Fletcher
, M.
Kataoka
, M.
Pepper
, T. J. B. M.
Janssen
, D. A.
Ritchie
, C. A.
Nicoll
, D.
Anderson
, and G. A. C.
Jones
, New J. Phys.
12
, 073013
(2010
).12.
K.
Nishiguchi
, C.
Koechlin
, Y.
Ono
, A.
Fujiwara
, H.
Inokawa
, and H.
Yamaguchi
, Jpn. J. Appl. Phys.
47
, 8305
(2008
).13.
Additional dots formed by potential fluctuation can be the origin of the irregular plateaus, but we think it was not the case because the irregular plateau occurred only at the plateau. Since the channel is undoped, the dopant level would not be the origin.
14.
P.
Lafarge
, H.
Pothier
, E. R.
Williams
, D.
Esteve
, C.
Urbina
, and M. H.
Devoret
, Z. Phys. B: Condens. Matter
85
, 327
(1991
).15.
The island capacitance using a prolate spheroid model is , where is the permittivity of , is the length of the island, and is the average value of the thickness and width of the island. The charging energy is .
16.
V.
Kashcheyevs
and B.
Kaestner
, Phys. Rev. Lett.
104
, 186805
(2010
).© 2011 American Institute of Physics.
2011
American Institute of Physics
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