Very low surface recombination velocities and were obtained for stacks synthesized by plasma-enhanced chemical vapor deposition on low resistivity - and -type , respectively. The stacks induced a constant effective lifetime under low illumination, comparable to on -type Si. Compared to single layer , a lower positive fixed charge density was revealed by second-harmonic generation measurements, while field-effect passivation was absent for a reference stack comprising thermally grown . The results indicate that hydrogenation of interface states played a key role in the passivation and remained effective up to annealing temperatures .
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