The coercivity of a perpendicularly magnetized FePt layer was modulated by applying the voltage to a Hall device through MgO and Al–O insulating layers. A change in in was observed by changing from −13 to 13 V. From the quantitative analysis of the voltage effect on , the change in the anisotropy energy by voltage application was evaluated to be 18.6 fJ/V m, which was of the same order as the theoretical prediction. The role of the MgO layer for the voltage effect was also discussed.
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Research Article| May 24 2011
Coercivity change in an FePt thin layer in a Hall device by voltage application
Takeshi Seki, Makoto Kohda, Junsaku Nitta, Koki Takanashi; Coercivity change in an FePt thin layer in a Hall device by voltage application. Appl. Phys. Lett. 23 May 2011; 98 (21): 212505. https://doi.org/10.1063/1.3595318
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