Hole mobility in wurtzite InN

Hole mobility in wurtzite InN at low electric fields is studied by an ensemble Monte Carlo calculation. Scatterings of holes by polar optical phonons, nonpolar optical phonons, acoustic phonons, ionized and neutral impurities, and threading dislocations are taken into account. Mobility of holes is $∼220cm2/Vs$ at 300 K in the InN, where holes are only scattered by the lattice. It decreases to $20–70cm2/Vs$ when the present quality of InN with threading dislocation density of $∼1010cm−2$ and residual donor concentration of over $1017cm−3$ is considered. The calculated mobility coincides well with the recent experimental observation.