We report a theoretical study of the hole density and the low-field mobility in modulation p-doped rolled-up Si/SiGe heterostructures. Solving coupled Poisson and Schrödinger equations, we show that the total hole density is strongly affected by charged surface states and can reach value of 1011cm2 for available doping level at room and low temperature. The simulation of the hole transport along the structure axis based on a Monte Carlo method reveals that the interface roughness scattering is a main mechanism limiting the mobility magnitude, which reaches the value of 104cm2/Vs.

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