Dielectric passivation of long wavelength infrared type-II InAs/GaSb superlattice photodetectors with different active region doping profiles has been studied. passivation was shown to be efficient as long as it was not put in direct contact with the highly doped superlattice. A hybrid graded doping profile combined with the shallow etch technique reduced the surface leakage current in passivated devices by up to two orders of magnitude compared to the usual design. As a result, at 77 K the passivated devices with cutoff wavelength exhibit an of , of , and a dark current level of at −50 mV bias.
Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes
S. Bogdanov, B.-M. Nguyen, A. M. Hoang, M. Razeghi; Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes. Appl. Phys. Lett. 2 May 2011; 98 (18): 183501. https://doi.org/10.1063/1.3584853
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