Ferroelectricity is attractive in data storage application as the polarizations can be used as binary levels. However, conductivity and ferroelectricity cannot be tuned independently in inorganic materials, thus two-terminal resistive memories with ferroelectrics are yet to be achieved. Here, we present an all-polymer-based system of semiconductor/ferroelectrics/semiconductor. Electrical switching behavior, which is critical to resistive memories, is observed. The mechanism of the conduction transition is attributed to the transmission probability of charge carriers tuned by electrical polarization. The importance of polarization in controlling the charge transport deserves further investigation for the realization and optimization of the two-terminal resistive memories with ferroelectrics.
Skip Nav Destination
Article navigation
25 April 2011
Research Article|
April 29 2011
Electrical switching behavior from all-polymer-based system of semiconductor/ferroelectrics/semiconductor
Yun Li;
Yun Li
1Key Laboratory of Photonic and Electronic Materials and School of Electronic Science and Engineering,
Nanjing University
, Nanjing 210093, People's Republic of China
Search for other works by this author on:
Chuan Liu;
Chuan Liu
2
Cavendish Laboratory
, Madingley Road, Cambridge CB3 0HE, United Kingdom
Search for other works by this author on:
Lijia Pan;
Lijia Pan
1Key Laboratory of Photonic and Electronic Materials and School of Electronic Science and Engineering,
Nanjing University
, Nanjing 210093, People's Republic of China
Search for other works by this author on:
Lin Pu;
Lin Pu
1Key Laboratory of Photonic and Electronic Materials and School of Electronic Science and Engineering,
Nanjing University
, Nanjing 210093, People's Republic of China
Search for other works by this author on:
Henning Sirringhaus;
Henning Sirringhaus
2
Cavendish Laboratory
, Madingley Road, Cambridge CB3 0HE, United Kingdom
Search for other works by this author on:
a)
Author to whom should be addressed. Electronic mail: yshi@nju.edu.cn.
Appl. Phys. Lett. 98, 173306 (2011)
Article history
Received:
January 13 2011
Accepted:
April 12 2011
Citation
Yun Li, Chuan Liu, Lijia Pan, Lin Pu, Henning Sirringhaus, Yi Shi; Electrical switching behavior from all-polymer-based system of semiconductor/ferroelectrics/semiconductor. Appl. Phys. Lett. 25 April 2011; 98 (17): 173306. https://doi.org/10.1063/1.3584854
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Topological and chiral matter—Physics and applications
Maia G. Vergniory, Takeshi Kondo, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.
Related Content
Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment
Appl. Phys. Lett. (January 2011)
Improved electron injection in poly( 9 , 9 ′ -dioctylfluorene)- co-benzothiodiazole via cesium carbonate by means of coannealing
Appl. Phys. Lett. (March 2011)
High performance polymer light-emitting diodes with N-type metal oxide/conjugated polyelectrolyte hybrid charge transport layers
Appl. Phys. Lett. (October 2011)
Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface
Appl. Phys. Lett. (August 2015)
Light-emitting electrochemical cells using polymeric ionic liquid/polyfluorene blends as luminescent material
Appl. Phys. Lett. (January 2010)