We report that an organic -dopant tri[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] resulted in higher density of holes than inorganic metal oxide dopants of or in 1,4-bis[N-(1-naphthyl)--phenylamino]--diamine even though the metal oxide dopants possess deeper work functions compared to . Higher charge generation efficiency results largely from the homogeneous dispersion of in the host. In contradistinction, the transmission electron microscopy analysis revealed a formation of metal oxide nanoclusters. This highlights the importance of homogeneous dispersion for an efficient doping.
Homogeneous dispersion of organic -dopants in an organic semiconductor as an origin of high charge generation efficiency
Jae-Hyun Lee, Hyun-Mi Kim, Ki-Bum Kim, Ryota Kabe, Pavel Anzenbacher, Jang-Joo Kim; Homogeneous dispersion of organic -dopants in an organic semiconductor as an origin of high charge generation efficiency. Appl. Phys. Lett. 25 April 2011; 98 (17): 173303. https://doi.org/10.1063/1.3569144
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