Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas the conduction is mainly limited by the bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers is related not only to the oxide-semiconductor interface but also to the depleted channel. The volume trap density is in the range of 630×1016cm3eV1, which is similar to SiSiO2 bulk transistors and remarkably lower than in high-k transistors. These results show that the noise in nanowire devices might be affected by additional trapping centers.

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