Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (QW states, $Δhν$ recombination radiation, sensitivity of $Eλ0→Eλ1,λ0→λ1,λ0>λ1$⁠) on base-to-collector photon-assisted tunneling and laser operation. Transistor (electrical) and laser (optical) operation are locked and “slide” up and down as a function of base current $(IB)$⁠, collector-base voltage (⁠$VBC$ or $VCE$⁠), and the influence of QW bandfilling (with increased sensitivity at $Eλ0→Eλ1$⁠) on photon-assisted base-collector tunneling.