Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (QW states, recombination radiation, sensitivity of ) on base-to-collector photon-assisted tunneling and laser operation. Transistor (electrical) and laser (optical) operation are locked and “slide” up and down as a function of base current , collector-base voltage ( or ), and the influence of QW bandfilling (with increased sensitivity at ) on photon-assisted base-collector tunneling.
REFERENCES
1.
J.
Bardeen
and W. H.
Brattain
, Phys. Rev.
74
, 230
(1948
).2.
N.
Holonyak
, Jr., MRS Bull.
30
, 509
(2005
).3.
R. N.
Hall
, G. E.
Fenner
, J. D.
Kingsley
, T. J.
Soltys
, and R. O.
Carlson
, Phys. Rev. Lett.
9
, 366
(1962
).4.
N.
Holonyak
, Jr. and S. F.
Bevacqua
, Appl. Phys. Lett.
1
, 82
(1962
).5.
E. A.
Rezek
, H.
Shichijo
, B. A.
Vojak
, and N.
Holonyak
, Jr., Appl. Phys. Lett.
31
, 534
(1977
).6.
R.
Dupuis
, P. D.
Dapkus
, N.
Holonyak
, Jr., E. A.
Rezek
, and R.
Chin
, Appl. Phys. Lett.
32
, 295
(1978
).7.
H.
Kroemer
, Proc. IRE
45
, 1535
(1957
).8.
W.
Snodgrass
, W.
Hafez
, N.
Harff
, and M.
Feng
, Proceedings of the IEEE International Electron Device Meeting (IEDM)
, San Francisco, CA, 11–13 December 2006
, pp. 1
–4
.9.
M.
Feng
and W.
Snodgrass
, Proceedings of the IEEE International Conference on Indium Phosphide Related Materials
, Matsue, Japan, 14–18 May 2007
, pp. 399
–402
.10.
G.
Walter
, N.
Holonyak
, Jr., M.
Feng
, and R.
Chan
, Appl. Phys. Lett.
85
, 4768
(2004
).11.
M.
Feng
, N.
Holonyak
, Jr., G.
Walter
, and R.
Chan
, Appl. Phys. Lett.
87
, 131103
(2005
).12.
N.
Holonyak
, Jr. and M.
Feng
, IEEE Spectrum
43
, 50
(2006
).13.
M.
Feng
, N.
Holonyak
, Jr., A.
James
, K.
Cimino
, G.
Walter
, and R.
Chan
, Appl. Phys. Lett.
89
, 113504
(2006
).14.
M.
Feng
, N.
Holonyak
, Jr., H. W.
Then
, C. H.
Wu
, and G.
Walter
, Appl. Phys. Lett.
94
, 041118
(2009
).15.
M.
Feng
, H. W.
Then
, N.
Holonyak
, Jr., G.
Walter
, and A.
James
, Appl. Phys. Lett.
95
, 033509
(2009
).16.
M.
Feng
, N.
Holonyak
, Jr., H. W.
Then
, and G.
Walter
, Appl. Phys. Lett.
91
, 053501
(2007
).17.
J. M.
Dallesasse
, N.
Holonyak
, Jr., A. R.
Sugg
, T. A.
Richard
, and N.
El-Zein
, Appl. Phys. Lett.
57
, 2844
(1990
).18.
S. A.
Maranowski
, A. R.
Sugg
, E. I.
Chan
, and N.
Holonyak
, Jr., Appl. Phys. Lett.
63
, 1660
(1993
).19.
H.
Statz
and G.
deMars
, Quantum Electronics
(Columbia University Press
, New York
, 1960
), p. 650
.20.
H. W.
Then
, G.
Walter
, M.
Feng
, and N.
Holonyak
, Jr., Appl. Phys. Lett.
91
, 243508
(2007
).21.
G.
Walter
, A.
James
, N.
Holonyak
, Jr., M.
Feng
, and R.
Chan
, Appl. Phys. Lett.
88
, 232105
(2006
).© 2011 American Institute of Physics.
2011
American Institute of Physics
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