Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (QW states, recombination radiation, sensitivity of ) on base-to-collector photon-assisted tunneling and laser operation. Transistor (electrical) and laser (optical) operation are locked and “slide” up and down as a function of base current , collector-base voltage ( or ), and the influence of QW bandfilling (with increased sensitivity at ) on photon-assisted base-collector tunneling.
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Research Article| March 22 2011
Bandfilling and photon-assisted tunneling in a quantum-well transistor laser
M. Feng, R. Bambery, N. Holonyak; Bandfilling and photon-assisted tunneling in a quantum-well transistor laser. Appl. Phys. Lett. 21 March 2011; 98 (12): 123505. https://doi.org/10.1063/1.3569949
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