Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors Available to Purchase

Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift $(>7.1V)$ in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage by NBIS can be strongly suppressed by high-pressure annealing under 10 atm $O2$ ambient. This improvement occurred through a reduction in oxygen vacancy defects in the IGZO film, indicating that a photoinduced transition from $VO$ to $VO2+$ was responsible for the NBIS-induced instability.