Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays Available to Purchase

Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters $(dh)$ and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with $dh$ and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.