HfTiO2 layers of various stoichiometries where deposited by physical vapor depostion on TiN and TiN/Ru bottom electrodes (BE) in order to determine the influence of composition, conduction band offset, and BE morphology on the overall leakage current characteristics. Current-voltage spectroscopy, transmission electron microscopy, electron energy loss spectroscopy, and conductive atomic force microscopy studies show increased leakage current and charge trapping with increased Ti content. The interplay of conduction band offset and trap density were studied. The influence of Ru bottom electrode roughness on the leakage current is higher than the influence of Ti content and low conduction band offset.

Topics
Electrical properties and parameters, Electrical characterization, Electrodes, Electron energy loss spectroscopy, Atomic force microscopy, Transmission electron microscopy, Chemical vapor deposition, Chemical elements, Stoichiometry
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© 2011 American Institute of Physics.
2011
American Institute of Physics
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