We demonstrate the control of the hole concentration in Ga1xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 to 7.5 K is remarkably similar to that observed in Ga1xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1xMnxP is reflected in the accompanying increase in resistivity by many orders of magnitude. Based on variable-temperature resistivity data we present a general picture for hole conduction in which variable-range hopping is the dominant transport mechanism in the presence of compensation.

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